Narumasa Soejima

643 total citations
20 papers, 550 citations indexed

About

Narumasa Soejima is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Narumasa Soejima has authored 20 papers receiving a total of 550 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 11 papers in Condensed Matter Physics and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Narumasa Soejima's work include Semiconductor materials and devices (14 papers), Silicon Carbide Semiconductor Technologies (11 papers) and GaN-based semiconductor devices and materials (11 papers). Narumasa Soejima is often cited by papers focused on Semiconductor materials and devices (14 papers), Silicon Carbide Semiconductor Technologies (11 papers) and GaN-based semiconductor devices and materials (11 papers). Narumasa Soejima collaborates with scholars based in Japan, Switzerland and United States. Narumasa Soejima's co-authors include Tetsu Kachi, Tsutomu Uesugi, M. Sugimoto, Hiroyuki Ueda, Masakazu Kanechika, Masahito Kodama, Osamu Ishiguro, Kenji Itoh, Yukihiko Watanabe and Kenji Itoh and has published in prestigious journals such as Applied Physics Letters, Applied Surface Science and Japanese Journal of Applied Physics.

In The Last Decade

Narumasa Soejima

20 papers receiving 534 citations

Peers

Narumasa Soejima

EEE

CMP

EOMM

AMPO

Yujin Hori Japan

V. M. Boĭko Russia

Joachim Wuerfl Germany

Chihoko Mizue Japan

Jaakko Sormunen Finland

G. Zhao United States

Marcin Miczek Japan

Y. Otoki Japan

M. W. Cho Japan

A. P. Zhang United States

Yujin Hori Japan

Narumasa Soejima

566 ×1.2

EEE

610 ×1.5

CMP

428 ×2.1

EOMM

127 ×1.5

59 ×1.0

AMPO

Citations per year, relative to Narumasa Soejima Narumasa Soejima (= 1×) peers Yujin Hori

Countries citing papers authored by Narumasa Soejima

Since Specialization

Citations

This map shows the geographic impact of Narumasa Soejima's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Narumasa Soejima with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Narumasa Soejima more than expected).

Fields of papers citing papers by Narumasa Soejima

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Narumasa Soejima. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Narumasa Soejima. The network helps show where Narumasa Soejima may publish in the future.

Co-authorship network of co-authors of Narumasa Soejima

This figure shows the co-authorship network connecting the top 25 collaborators of Narumasa Soejima. A scholar is included among the top collaborators of Narumasa Soejima based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Narumasa Soejima. Narumasa Soejima is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Isomura, Noritake, et al.. (2021). Dependence of the interfacial atomic structure of SiO ₂ /GaN upon SiO ₂ deposition methods and post-deposition annealing, as revealed by X-ray absorption spectroscopy. Japanese Journal of Applied Physics. 60(5). 50902–50902. 3 indexed citations

Isomura, Noritake, et al.. (2020). X-ray photoelectron spectroscopy insights on interfaces between SiO ₂ films and GaN substrates: differences due to depositional technique. Japanese Journal of Applied Physics. 59(9). 90902–90902. 1 indexed citations

Kutsuki, Katsuhiro, et al.. (2019). Experimental Investigation and Improvement of Channel Mobility in 4H-SiC Trench MOSFETs. 20.3.1–20.3.4. 6 indexed citations

Kutsuki, Katsuhiro, et al.. (2019). Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs. Solid-State Electronics. 157. 12–19. 11 indexed citations

Katsuno, T., Takaaki Manaka, Narumasa Soejima, T. Ishikawa, & Mitsumasa Iwamoto. (2018). Degradation analysis of AlGaN/GaN high electron mobility transistor by electroluminescence, electric field-induced optical second-harmonic generation, and photoluminescence imaging. Applied Physics Letters. 113(1). 5 indexed citations

Katsuno, T., et al.. (2017). 電場誘起光第二高調波発生によるp‐GaNゲートAlGaN/GaN高電子移動度トランジスタ(HEMT)中の電場板下の捕獲電荷の直接観測. Applied Physics Letters. 110(9). 5. 1 indexed citations

Katsuno, T., Takaaki Manaka, Narumasa Soejima, & Mitsumasa Iwamoto. (2017). Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation. Applied Physics Letters. 110(9). 12 indexed citations

Katsuno, T., Takaaki Manaka, T. Ishikawa, et al.. (2016). Three-dimensional current collapse imaging of AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation. Applied Physics Letters. 109(19). 9 indexed citations

Isomura, Noritake, et al.. (2015). Depth-selective X-ray absorption spectroscopy by detection of energy-loss Auger electrons. Applied Surface Science. 355. 268–271. 19 indexed citations

10.

Watanabe, H., Toshiyuki Yamamoto, Shoichi Onda, et al.. (2013). Effect of Damage Removal Treatment after Trench Etching on the Reliability of Trench MOSFET. Materials science forum. 740-742. 789–792. 4 indexed citations

11.

Morimoto, Jun, Kimimori Hamada, Toshimasa Yamamoto, et al.. (2013). A 4H-SiC trench MOSFET with thick bottom oxide for improving characteristics. 43–46. 40 indexed citations

12.

Morimoto, Jun, Toshimasa Yamamoto, Jun Sakakibara, et al.. (2013). 4H-SiC Trench MOSFET with Thick Bottom Oxide. Materials science forum. 740-742. 683–686. 17 indexed citations

13.

Soejima, Narumasa, et al.. (2013). Effect of NH3 Post-Oxidation Annealing on Flatness of SiO2/SiC Interface. Materials science forum. 740-742. 723–726. 14 indexed citations

14.

Ishikawa, T., et al.. (2013). Effect of Suppressing Reoxidation at SiO2/SiC Interface during Post-Oxidation Annealing in N2O with Al2O3 Capping Layer. Materials science forum. 740-742. 737–740. 4 indexed citations

15.

Kim, Eun Hee, Narumasa Soejima, Yukihiko Watanabe, M. Ishiko, & Tetsu Kachi. (2010). Electrical Properties of Metal–Insulator–Semiconductor Capacitors on Freestanding GaN Substrate. Japanese Journal of Applied Physics. 49(4S). 04DF08–04DF08. 25 indexed citations

16.

Kodama, Masahito, M. Sugimoto, Narumasa Soejima, et al.. (2008). GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching. Applied Physics Express. 1. 21104–21104. 223 indexed citations

17.

Tokuda, Yutaka, et al.. (2008). Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy. Materials science forum. 600-603. 1297–1300. 1 indexed citations

18.

Kanechika, Masakazu, M. Sugimoto, Narumasa Soejima, et al.. (2007). A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor. Japanese Journal of Applied Physics. 46(6L). L503–L503. 144 indexed citations

19.

Sugimoto, M., Hiroyuki Ueda, Masakazu Kanechika, et al.. (2007). Vertical device operation of AlGaN/GaN HEMTs on free-standing n-GaN substrates. 368–372. 10 indexed citations

20.

Sugimoto, M., et al.. (2005). A Study of MIS-AlGaN/GaN HEMTs with SiO_2 Films as Gate Insulator. 2005(45). 39–44. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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