Tsunenobu Kimoto

22.5k total citations · 4 hit papers
665 papers, 17.9k citations indexed

About

Tsunenobu Kimoto is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Tsunenobu Kimoto has authored 665 papers receiving a total of 17.9k indexed citations (citations by other indexed papers that have themselves been cited), including 610 papers in Electrical and Electronic Engineering, 157 papers in Atomic and Molecular Physics, and Optics and 132 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Tsunenobu Kimoto's work include Silicon Carbide Semiconductor Technologies (540 papers), Semiconductor materials and devices (390 papers) and Semiconductor materials and interfaces (139 papers). Tsunenobu Kimoto is often cited by papers focused on Silicon Carbide Semiconductor Technologies (540 papers), Semiconductor materials and devices (390 papers) and Semiconductor materials and interfaces (139 papers). Tsunenobu Kimoto collaborates with scholars based in Japan, Germany and United States. Tsunenobu Kimoto's co-authors include Jun Suda, Hiroyuki Matsunami, H. Matsunami, James A. Cooper, Akira Itoh, Katsunori Danno, Toru Hiyoshi, Hiroki Niwa, Masato Noborio and Hiroshi Yano and has published in prestigious journals such as Physical Review Letters, SHILAP Revista de lepidopterología and Applied Physics Letters.

In The Last Decade

Tsunenobu Kimoto

646 papers receiving 17.3k citations

Hit Papers

Material science and device phys... 1997 2026 2006 2016 2015 2014 1997 2020 250 500 750
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Material science and device physics in SiC technology for high-voltage power devices
    2015 864 citations Tsunenobu Kimoto Japanese Journal of Applied Physics profile →
  2. Fundamentals of Silicon Carbide Technology
    2014 833 citations Tsunenobu Kimoto et al. profile →
  3. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
    1997 500 citations Hiroyuki Matsunami, Tsunenobu Kimoto profile →
  4. Defect engineering in SiC technology for high-voltage power devices
    2020 229 citations Tsunenobu Kimoto, Heiji Watanabe Applied Physics Express profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tsunenobu Kimoto Japan 64 16.0k 3.9k 3.1k 2.1k 1.7k 665 17.9k
Jesús A. del Alamo United States 57 10.6k 0.7× 4.1k 1.1× 1.4k 0.5× 4.2k 2.0× 3.5k 2.0× 433 14.3k
Weimin Chen Sweden 48 6.0k 0.4× 3.5k 0.9× 1.5k 0.5× 4.0k 1.9× 1.9k 1.1× 584 10.7k
Krishna C. Saraswat United States 75 19.2k 1.2× 5.6k 1.4× 1.5k 0.5× 6.3k 3.0× 294 0.2× 625 21.5k
Enrico Zanoni Italy 57 11.7k 0.7× 4.3k 1.1× 3.6k 1.2× 2.7k 1.3× 11.0k 6.3× 708 15.2k
Jiong Yang China 62 5.6k 0.4× 1.3k 0.3× 3.1k 1.0× 12.0k 5.7× 1.2k 0.7× 248 14.5k
Daniel M. Fleetwood United States 76 18.8k 1.2× 1.6k 0.4× 1.7k 0.6× 3.0k 1.4× 2.3k 1.3× 606 20.2k
Gaudenzio Meneghesso Italy 57 11.4k 0.7× 3.8k 1.0× 3.7k 1.2× 2.9k 1.4× 11.3k 6.4× 737 14.9k
Eugene A. Fitzgerald United States 59 12.5k 0.8× 7.5k 1.9× 1.0k 0.3× 5.1k 2.4× 1.3k 0.8× 449 15.5k
Matteo Meneghini Italy 52 8.6k 0.5× 2.9k 0.8× 3.3k 1.1× 2.5k 1.2× 9.8k 5.6× 550 11.8k
Anthony E. Kelly United Kingdom 41 4.6k 0.3× 1.5k 0.4× 446 0.1× 1.3k 0.6× 1.2k 0.7× 254 7.8k

Countries citing papers authored by Tsunenobu Kimoto

Since Specialization
Citations

This map shows the geographic impact of Tsunenobu Kimoto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tsunenobu Kimoto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tsunenobu Kimoto more than expected).

Fields of papers citing papers by Tsunenobu Kimoto

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tsunenobu Kimoto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tsunenobu Kimoto. The network helps show where Tsunenobu Kimoto may publish in the future.

Co-authorship network of co-authors of Tsunenobu Kimoto

This figure shows the co-authorship network connecting the top 25 collaborators of Tsunenobu Kimoto. A scholar is included among the top collaborators of Tsunenobu Kimoto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tsunenobu Kimoto. Tsunenobu Kimoto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hara, Masahiro, et al.. (2025). A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures. Materials Science in Semiconductor Processing. 196. 109606–109606.
2.
Roccaforte, Fabrizio, Daniel Alquier, Tsunenobu Kimoto, & Anant Agarwal. (2024). Silicon Carbide materials and devices: power electronics and innovative applications. Materials Science in Semiconductor Processing. 182. 108675–108675. 4 indexed citations
3.
Via, Francesco La, Daniel Alquier, Filippo Giannazzo, et al.. (2023). Emerging SiC Applications beyond Power Electronic Devices. Micromachines. 14(6). 1200–1200. 51 indexed citations
4.
Hara, Masahiro, Mitsuaki Kaneko, & Tsunenobu Kimoto. (2021). Nearly Fermi-level-pinning-free interface in metal/heavily-doped SiC Schottky structures. Japanese Journal of Applied Physics. 60(SB). SBBD14–SBBD14. 12 indexed citations
5.
Kaneko, Mitsuaki, et al.. (2021). Expansion patterns of single Shockley stacking faults from scratches on 4H-SiC. Japanese Journal of Applied Physics. 60(6). 68001–68001. 4 indexed citations
6.
Nakajima, Masashi, et al.. (2021). Lateral spreads of ion-implanted Al and P atoms in silicon carbide. Japanese Journal of Applied Physics. 60(5). 51001–51001. 7 indexed citations
7.
Umeda, T., Y. Nakano, Takafumi Okuda, et al.. (2020). Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4H-SiC(0001)/SiO2 interfaces. Journal of Applied Physics. 127(14). 24 indexed citations
8.
Asada, Satoshi, Jun Suda, & Tsunenobu Kimoto. (2020). Temperature Dependence of Conductivity Modulation in SiC Bipolar Junction Transistors. IEEE Transactions on Electron Devices. 67(4). 1699–1704. 6 indexed citations
9.
Kobayashi, Takuma, et al.. (2020). Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation. Applied Physics Express. 13(9). 91003–91003. 51 indexed citations
10.
Nakazawa, Satoshi, et al.. (2019). Effects of post-deposition annealing in O 2 on threshold voltage of Al 2 O 3 /AlGaN/GaN MOS heterojunction field-effect transistors. Japanese Journal of Applied Physics. 58(3). 30902–30902. 10 indexed citations
11.
Aketa, Masatoshi, et al.. (2018). Suppression of Punch-Through Current in 3 kV 4H-SiC Reverse-Blocking MOSFET by Using Highly Doped Drift Layer. IEEE Journal of the Electron Devices Society. 6. 449–453. 12 indexed citations
12.
Kato, Masashi, et al.. (2018). Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC. Journal of Applied Physics. 124(9). 25 indexed citations
13.
Ichikawa, Yoshihito, M. Ichimura, Tsunenobu Kimoto, & Masashi Kato. (2018). Passivation of Surface Recombination at the Si-Face of 4H-SiC by Acidic Solutions. ECS Journal of Solid State Science and Technology. 7(8). Q127–Q130. 18 indexed citations
14.
Asada, Satoshi, Jun Suda, & Tsunenobu Kimoto. (2018). Determination of Surface Recombination Velocity From Current–Voltage Characteristics in SiC p-n Diodes. IEEE Transactions on Electron Devices. 65(11). 4786–4791. 8 indexed citations
15.
Aketa, Masatoshi, et al.. (2017). High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch. IEEE Transactions on Electron Devices. 64(10). 4167–4174. 19 indexed citations
16.
Asada, Satoshi, Tsunenobu Kimoto, & Jun Suda. (2017). Effect of Postoxidation Nitridation on Forward Current–Voltage Characteristics in 4H–SiC Mesa p-n Diodes Passivated With SiO2. IEEE Transactions on Electron Devices. 64(7). 3016–3018. 3 indexed citations
17.
Kimoto, Tsunenobu, et al.. (2017). Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells. Journal of materials research/Pratt's guide to venture capital sources. 32(14). 2631–2637. 16 indexed citations
18.
Matsunami, Hiroyuki, Tsunenobu Kimoto, & Hiroshi Yano. (2003). Hetero-Interface Properties of SiO~2/4H-SiC on Various Crystal Orientations. IEICE Transactions on Electronics. 86(10). 1943–1948. 1 indexed citations
19.
Mukaihara, T., Hideyuki Nasu, Tsunenobu Kimoto, et al.. (2002). Highly reliable 40 mW, 25 GHz × 20 ch thermally tunable DFB laser module integrated with wavelength monitor. European Conference on Optical Communication. 3. 1–2. 5 indexed citations
20.
Hirao, T., et al.. (2001). Design and Fabrication of SiC RESURF MOSFETs. 101(515). 77–82. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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