Masahito Kodama

494 total citations
12 papers, 416 citations indexed

About

Masahito Kodama is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Masahito Kodama has authored 12 papers receiving a total of 416 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 4 papers in Condensed Matter Physics and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Masahito Kodama's work include Silicon Carbide Semiconductor Technologies (9 papers), Semiconductor materials and devices (8 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). Masahito Kodama is often cited by papers focused on Silicon Carbide Semiconductor Technologies (9 papers), Semiconductor materials and devices (8 papers) and Advancements in Semiconductor Devices and Circuit Design (6 papers). Masahito Kodama collaborates with scholars based in Japan and Switzerland. Masahito Kodama's co-authors include Tsutomu Uesugi, Tetsu Kachi, Masakazu Kanechika, M. Sugimoto, Osamu Ishiguro, Narumasa Soejima, Hiroyuki Ueda, Kenji Itoh, Kenji Itoh and Hiroto Tadano and has published in prestigious journals such as Journal of The Electrochemical Society, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

Masahito Kodama

12 papers receiving 402 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Masahito Kodama Japan 6 353 346 174 69 35 12 416
Tsutomu Ina Japan 4 471 1.3× 524 1.5× 221 1.3× 89 1.3× 65 1.9× 6 554
S. C. Foo Singapore 9 301 0.9× 328 0.9× 180 1.0× 74 1.1× 62 1.8× 11 369
Y. K. T. Maung Singapore 8 395 1.1× 419 1.2× 246 1.4× 91 1.3× 78 2.2× 9 475
Osamu Ishiguro Japan 9 407 1.2× 479 1.4× 232 1.3× 93 1.3× 83 2.4× 12 513
Yoshitomo Hatakeyama Japan 7 291 0.8× 340 1.0× 154 0.9× 40 0.6× 72 2.1× 9 356
B. Peres United States 12 282 0.8× 347 1.0× 209 1.2× 100 1.4× 51 1.5× 21 401
Hidekazu Umeda Japan 12 452 1.3× 441 1.3× 154 0.9× 47 0.7× 39 1.1× 16 503
S. S. Su China 10 250 0.7× 250 0.7× 205 1.2× 72 1.0× 69 2.0× 25 341
Sreenidhi Turuvekere India 7 347 1.0× 384 1.1× 165 0.9× 79 1.1× 92 2.6× 15 429
Markus Cäsar Germany 10 371 1.1× 415 1.2× 143 0.8× 65 0.9× 58 1.7× 17 430

Countries citing papers authored by Masahito Kodama

Since Specialization
Citations

This map shows the geographic impact of Masahito Kodama's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Masahito Kodama with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Masahito Kodama more than expected).

Fields of papers citing papers by Masahito Kodama

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Masahito Kodama. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Masahito Kodama. The network helps show where Masahito Kodama may publish in the future.

Co-authorship network of co-authors of Masahito Kodama

This figure shows the co-authorship network connecting the top 25 collaborators of Masahito Kodama. A scholar is included among the top collaborators of Masahito Kodama based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Masahito Kodama. Masahito Kodama is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

12 of 12 papers shown
1.
Kodama, Masahito, M. Sugimoto, Narumasa Soejima, et al.. (2008). GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching. Applied Physics Express. 1. 21104–21104. 223 indexed citations
2.
Kanechika, Masakazu, M. Sugimoto, Narumasa Soejima, et al.. (2007). A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor. Japanese Journal of Applied Physics. 46(6L). L503–L503. 144 indexed citations
3.
Sugimoto, M., et al.. (2005). A Study of MIS-AlGaN/GaN HEMTs with SiO_2 Films as Gate Insulator. 2005(45). 39–44. 1 indexed citations
4.
Kanechika, Masakazu, Masahito Kodama, Tsutomu Uesugi, & Hiroto Tadano. (2005). A Concept of SOI RESURF Lateral Devices With Striped Trench Electrodes. IEEE Transactions on Electron Devices. 52(6). 1205–1210. 15 indexed citations
5.
Suzuki, Tomiko M., et al.. (2002). Shallow angle implantation for extended trench gate power MOSFETs with super junction structure. 427–430. 13 indexed citations
6.
Uesugi, Tsutomu, et al.. (2002). New 3-D lateral power MOSFETs with ultra low on-resistance. 57–60. 6 indexed citations
7.
Kodama, Masahito, et al.. (2001). Device parameter dependence of temperature characteristics of lateral power MOSFET formed by solid‐phase epitaxy. Electronics and Communications in Japan (Part II Electronics). 84(5). 55–61. 1 indexed citations
8.
Irokawa, Yoshihiro, Masahito Kodama, & Tetsu Kachi. (2001). Electrical Properties of 3C-SiC Layers Grown on Silicon Substrates with a Novel Stress Relaxation Structure. Journal of The Electrochemical Society. 148(12). G680–G680. 2 indexed citations
9.
Irokawa, Yoshihiro, Masahito Kodama, & Tetsu Kachi. (2001). Growth of 3C-SiC Layers on Si Substrates with a Novel Stress Relaxation Structure. Japanese Journal of Applied Physics. 40(10R). 5907–5907. 8 indexed citations
10.
Kodama, Masahito, et al.. (2001). Device parameter dependence of temperature characteristics of lateral power MOSFET formed by solid‐phase epitaxy. Electronics and Communications in Japan (Part II Electronics). 84(5). 55–61. 1 indexed citations
11.
Kodama, Masahito & Tsutomu Uesugi. (1998). Temperature Characteristics of Lateral Power MOS FET Formed by Solid Phase Epitaxy. IEICE Transactions on Electronics. 81(9). 1505–1507. 1 indexed citations
12.
Kodama, Masahito, et al.. (1996). A solid‐phase epitaxy with clean surface formation using SiH4 and Evaluation of SOI Layer. Electronics and Communications in Japan (Part II Electronics). 79(12). 71–78. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Tsutomu Ina Breakdown of academic impact, for papers by S. C. Foo Breakdown of academic impact, for papers by Y. K. T. Maung Breakdown of academic impact, for papers by Osamu Ishiguro Breakdown of academic impact, for papers by Yoshitomo Hatakeyama Breakdown of academic impact, for papers by B. Peres Breakdown of academic impact, for papers by Hidekazu Umeda Breakdown of academic impact, for papers by S. S. Su Breakdown of academic impact, for papers by Sreenidhi Turuvekere Breakdown of academic impact, for papers by Markus Cäsar
Rankless by CCL
2026