H. Shindou

657 total citations
25 papers, 360 citations indexed

About

H. Shindou is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Astronomy and Astrophysics. According to data from OpenAlex, H. Shindou has authored 25 papers receiving a total of 360 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 4 papers in Hardware and Architecture and 1 paper in Astronomy and Astrophysics. Recurrent topics in H. Shindou's work include Semiconductor materials and devices (18 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers) and Radiation Effects in Electronics (17 papers). H. Shindou is often cited by papers focused on Semiconductor materials and devices (18 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers) and Radiation Effects in Electronics (17 papers). H. Shindou collaborates with scholars based in Japan, Greece and United States. H. Shindou's co-authors include S. Kuboyama, Sumio Matsuda, Toshio Hirao, T. Hirao, Takashi Tamura, Hiroshi Abe, Y. Tsuchiya, Eiichi Mizuta, Tatsuya Yamaguchi and N. Ikeda and has published in prestigious journals such as IEEE Transactions on Nuclear Science and TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES AEROSPACE TECHNOLOGY JAPAN.

In The Last Decade

H. Shindou

24 papers receiving 333 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Shindou Japan 12 340 76 48 16 15 25 360
Akil K. Sutton United States 18 873 2.6× 107 1.4× 9 0.2× 36 2.3× 47 3.1× 56 890
Ryan M. Diestelhorst United States 14 552 1.6× 99 1.3× 7 0.1× 21 1.3× 23 1.5× 34 570
Nelson E. Lourenco United States 16 596 1.8× 58 0.8× 13 0.3× 5 0.3× 64 4.3× 59 619
Troy England United States 12 239 0.7× 40 0.5× 7 0.1× 23 1.4× 32 2.1× 35 280
R. Krithivasan United States 17 665 2.0× 88 1.2× 6 0.1× 12 0.8× 49 3.3× 28 674
Elizabeth C. Auden United States 6 150 0.4× 32 0.4× 3 0.1× 11 0.7× 5 0.3× 14 170
Zachary E. Fleetwood United States 15 498 1.5× 43 0.6× 8 0.2× 2 0.1× 36 2.4× 47 522
B. Martin Switzerland 8 87 0.3× 27 0.4× 6 0.1× 53 3.3× 20 1.3× 39 220
S. S. Semikh Russia 8 105 0.3× 41 0.5× 3 0.1× 49 3.1× 24 1.6× 16 169
Danny Elad Israel 16 662 1.9× 29 0.4× 16 0.3× 2 0.1× 57 3.8× 82 706

Countries citing papers authored by H. Shindou

Since Specialization
Citations

This map shows the geographic impact of H. Shindou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Shindou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Shindou more than expected).

Fields of papers citing papers by H. Shindou

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Shindou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Shindou. The network helps show where H. Shindou may publish in the future.

Co-authorship network of co-authors of H. Shindou

This figure shows the co-authorship network connecting the top 25 collaborators of H. Shindou. A scholar is included among the top collaborators of H. Shindou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Shindou. H. Shindou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ohtani, Naoki, Kyo Kume, Takahiro Makino, et al.. (2025). Multiple-Cell Upset Analysis on 16/12-nm Bulk FinFET SRAM Caused by Proton Irradiation. IEEE Transactions on Nuclear Science. 72(4). 1470–1478.
2.
Baba, Shunsuke, Daisuke Kobayashi, Shogo Okamoto, et al.. (2020). Investigation of Buried-Well Potential Perturbation Effects on SEU in SOI DICE-Based Flip-Flop Under Proton Irradiation. IEEE Transactions on Nuclear Science. 68(6). 1222–1227. 3 indexed citations
3.
Sakamoto, Toshitsugu, Munehiro Tada, Akinori Takeyama, et al.. (2019). Single-Event Effects Induced on Atom Switch-based Field-Programmable Gate Array. IEEE Transactions on Nuclear Science. 66(7). 1355–1360. 5 indexed citations
4.
Kuboyama, S., Eiichi Mizuta, H. Shindou, et al.. (2019). Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions. IEEE Transactions on Nuclear Science. 66(7). 1688–1693. 24 indexed citations
5.
Kuboyama, S., et al.. (2019). Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs. 1–4. 4 indexed citations
6.
Kobayashi, Daisuke, Kazuyuki Hirose, Shogo Okamoto, et al.. (2019). Data-Retention-Voltage-Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergistic Effects of TID. IEEE Transactions on Nuclear Science. 67(1). 328–335. 18 indexed citations
7.
Mizuta, Eiichi, et al.. (2018). Radiation Test Results in Newly Developed Super-Junction Power MOSFETs. 1–6. 1 indexed citations
8.
Utashima, Masayoshi, et al.. (2014). A Study on Medium Earth Orbit Utilization. TRANSACTIONS OF THE JAPAN SOCIETY FOR AERONAUTICAL AND SPACE SCIENCES AEROSPACE TECHNOLOGY JAPAN. 12(ists29). Pn_17–Pn_21. 1 indexed citations
9.
Tsuchiya, Y., et al.. (2013). Applicability of Redundant Pairs of SOI Transistors for Analog Circuits and Their Applications to Phase-Locked Loop Circuits. IEEE Transactions on Nuclear Science. 60(1). 230–235. 6 indexed citations
10.
Kuboyama, S., et al.. (2011). Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs. IEEE Transactions on Nuclear Science. 58(6). 2734–2738. 75 indexed citations
11.
Shindou, H., et al.. (2010). DICE-Based Flip-Flop With SET Pulse Discriminator on a 90 nm Bulk CMOS Process. IEEE Transactions on Nuclear Science. 17 indexed citations
12.
Shindou, H., et al.. (2008). Improvement of the tolerance to total ionizing dose in SOI CMOS. 50. 135–136. 3 indexed citations
13.
Tsuchiya, Y., et al.. (2008). New SET Characterization Technique Using SPICE for Fully Depleted CMOS/SOI Digital Circuitry. IEEE Transactions on Nuclear Science. 55(6). 2921–2927. 14 indexed citations
14.
Shindou, H., et al.. (2007). Evaluation of the Proton Induced Bulk Damage in SDRAM Utilizing 90 nm Process Technology. IEEE Transactions on Nuclear Science. 54(6). 2233–2237. 7 indexed citations
15.
Yamaguchi, Tatsuya, et al.. (2005). Hardness-by-design approach for 0.15 /spl mu/m fully depleted CMOS/SOI digital logic devices with enhanced SEU/SET immunity. IEEE Transactions on Nuclear Science. 52(6). 2524–2530. 40 indexed citations
16.
Yamaguchi, Tatsuya, et al.. (2004). SEE in a 0.15 /spl mu/m fully depleted CMOS/SOI commercial Process. IEEE Transactions on Nuclear Science. 51(6). 3621–3625. 8 indexed citations
17.
Shindou, H., S. Kuboyama, N. Ikeda, T. Hirao, & Sumio Matsuda. (2003). Bulk damage caused by single protons in SDRAMs. IEEE Transactions on Nuclear Science. 50(6). 1839–1845. 18 indexed citations
18.
Tsuchiya, Y., et al.. (2003). Single-event effects in 0.18 /spl mu/m CMOS commercial processes. IEEE Transactions on Nuclear Science. 50(6). 2135–2138. 12 indexed citations
19.
Kuboyama, S., H. Shindou, T. Hirao, & Sumio Matsuda. (2002). Consistency of bulk damage factor and NIEL for electrons, protons, and heavy ions in Si CCDs. IEEE Transactions on Nuclear Science. 49(6). 2684–2689. 11 indexed citations
20.
Shindou, H., S. Kuboyama, Sumio Matsuda, et al.. (2000). Analysis of single-ion multiple-bit upset in high-density DRAMs. IEEE Transactions on Nuclear Science. 47(6). 2400–2404. 36 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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