Mathieu Luisier

7.6k citations

252 papers · 5.6k indexed · 2 hit papers · h-index 38

Impact in

Electrical and Electronic Engineering top 0.5%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
Materials Chemistry top 2%
- Graphene research and applications
- 2D Materials and Applications

Papers in ⓘ

Electrical and Electronic Engineering 213
- Advancements in Semiconductor Devices and Circuit Design 128
- Semiconductor materials and devices 109
- Advanced Memory and Neural Computing 38
- Ferroelectric and Negative Capacitance Devices 31
Atomic and Molecular Physics, and Optics 71
- Quantum and electron transport phenomena 38

Co-authors: Gerhard Klimeck (48 shared papers)Andreas Schenk (30 shared papers)Wolfgang Fichtner (6 shared papers)Áron Szabó (18 shared papers)Mark Lundstrom (6 shared papers)Reto Rhyner (15 shared papers)Lynne Gignac (2 shared papers)Chris Breslin (2 shared papers)
Journals: Journal of Applied Physics (19 papers)Applied Physics Letters (17 papers)IEEE Transactions on Electron Devices (17 papers)IEEE Electron Device Letters (11 papers)Solid-State Electronics (8 papers)
Partner nations: Switzerland United States France

In The Last Decade

Mathieu Luisier

238 papers receiving 5.4k citations

Hit Papers

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The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials 2021 · 268 citations

Peers

Countries citing papers authored by Mathieu Luisier

Since Specialization

Citations

This map shows the geographic impact of Mathieu Luisier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Mathieu Luisier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Mathieu Luisier more than expected).

Fields of papers citing papers by Mathieu Luisier

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Mathieu Luisier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Mathieu Luisier. The network helps show where Mathieu Luisier may publish in the future.

Co-authors

The 25 scholars most cited alongside Mathieu Luisier, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Mathieu Luisier Line = papers co-authored together Mathieu Luisier links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 252 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Sub-10 nm Carbon Nanotube Transistor Nano Letters ·Aaron D. Franklin, Mathieu Luisier, Shu‐Jen Han, George S. Tulevski, Chris Breslin, Lynne Gignac, Mark Lundstrom, Wilfried Haensch Hit paper breakdown →	2012	561
2	Atomistic simulation of nanowires in thesp3d5stight-binding formalism: From boundary conditions to strain calculations Physical Review B* ·Mathieu Luisier, Andreas Schenk, Wolfgang Fichtner, Gerhard Klimeck	2006	299
3	The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials Nature Electronics ·Theresia Knobloch, Yu. Yu. Illarionov, Fabian Ducry, Christian Schleich, Stefan Wachter, Kenji Watanabe, Takashi Taniguchi, Thomas Mueller, Michael Waltl, Mario Lanza, M. I. Vexler, Mathieu Luisier, Tibor Grasser Hit paper breakdown →	2021	268
4	Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering Physical Review B ·Mathieu Luisier, Gerhard Klimeck	2009	189
5	Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling Journal of Applied Physics ·Mathieu Luisier, Gerhard Klimeck	2010	147
6	Soft surfaces of nanomaterials enable strong phonon interactions Nature ·Deniz Bozyigit, Nuri Yazdani, Maksym Yarema, Olesya Yarema, Weyde M. M. Lin, Sebastian Volk, Kantawong Vuttivorakulchai, Mathieu Luisier, Fanni Jurànyi, Vanessa Wood	2016	142
7	Quantum transport in two- and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green’s function formalism Journal of Applied Physics ·Mathieu Luisier, Andreas Schenk, Wolfgang Fichtner	2006	124
8	On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients Journal of Applied Physics ·Changwook Jeong, Raseong Kim, Mathieu Luisier, Supriyo Datta, Mark Lundstrom	2010	123
9	Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors IEEE Electron Device Letters ·Mathieu Luisier, Gerhard Klimeck	2009	122
10	Atomic Scale Plasmonic Switch Nano Letters ·Alexandros Emboras, Jens Niegemann, Ping Ma, Christian Haffner, Andreas Pedersen, Mathieu Luisier, Christian Hafner, Thomas Schimmel, Juerg Leuthold	2015	121
11	Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights ACS Applied Materials & Interfaces ·Mattia Halter, Laura Bégon‐Lours, Valeria Bragaglia, Marilyne Sousa, Bert Jan Offrein, Stefan Abel, Mathieu Luisier, J. Fompeyrine	2020	88
12	Ab initiosimulation of single- and few-layerMoS2transistors: Effect of electron-phonon scattering Physical Review B ·Áron Szabó, Reto Rhyner, Mathieu Luisier	2015	86
13	Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors IEEE Electron Device Letters ·Samarth Agarwal, Gerhard Klimeck, Mathieu Luisier	2010	85
14	One-Dimensional Edge Contacts to a Monolayer Semiconductor Nano Letters ·Achint Jain, Áron Szabó, Markus Parzefall, E. Bonvin, Takashi Taniguchi, Kenji Watanabe, Palash Bharadwaj, Mathieu Luisier, Lukáš Novotný	2019	83
15	Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures Purdue e-Pubs (Purdue University System) ·Mathieu Luisier, Gerhard Klimeck	2009	77
16	Light from van der Waals quantum tunneling devices Repository for Publications and Research Data (ETH Zurich) ·Markus Parzefall, Áron Szabó, Takashi Taniguchi, Kenji Watanabe, Mathieu Luisier, Lukáš Novotný	2019	70
17	Tuning Electron–Phonon Interactions in Nanocrystals through Surface Termination Nano Letters ·Nuri Yazdani, Deniz Bozyigit, Kantawong Vuttivorakulchai, Mathieu Luisier, Ivan Infante, Vanessa Wood	2018	70
18	Ab-Initio Simulation of van der Waals MoTe₂–SnS₂ Heterotunneling FETs for Low-Power Electronics IEEE Electron Device Letters ·Áron Szabó, Steven J. Koester, Mathieu Luisier	2015	68
19	WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake npj 2D Materials and Applications ·Nicolò Oliva, Jonathan Backman, Luca Capua, Matteo Cavalieri, Mathieu Luisier, Adrian M. Ionescu	2020	66
20	2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope ACS Nano ·Cedric Klinkert, Áron Szabó, Christian Stieger, Davide Campi, Nicola Marzari, Mathieu Luisier	2020	65

About Mathieu Luisier

Mathieu Luisier is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Condensed Matter Physics, having authored 252 papers that have together received 5.6k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (128 papers), Semiconductor materials and devices (109 papers), Nanowire Synthesis and Applications (80 papers), Quantum and electron transport phenomena (38 papers), Advanced Memory and Neural Computing (38 papers), Graphene research and applications (36 papers), Ferroelectric and Negative Capacitance Devices (31 papers) and 2D Materials and Applications (29 papers). The work is most often cited by research in Electrical and Electronic Engineering (4.1k citations), Materials Chemistry (2.6k citations), Atomic and Molecular Physics, and Optics (1.3k citations), Biomedical Engineering (1.6k citations) and Condensed Matter Physics (178 citations). Mathieu Luisier has collaborated with scholars based in Switzerland, United States and France. Frequent co-authors include Gerhard Klimeck, Andreas Schenk, Wolfgang Fichtner, Áron Szabó, Mark Lundstrom, Reto Rhyner, Lynne Gignac, Chris Breslin, Shu‐Jen Han and Wilfried Haensch. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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