J. B. Webb

536 citations

18 papers · 478 indexed · h-index 11

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 15
- GaN-based semiconductor devices and materials 15
Electronic, Optical and Magnetic Materials 8
- Ga2O3 and related materials 8

Co-authors: J. A. Bardwell H. Tang S. Rolfe C. Uzan-Saguy J. Salzman S. Raymond Shoou‐Jinn Chang Y. T. Cherng
Journals: Applied Physics Letters (3 papers)Solid-State Electronics (2 papers)Materials Science and Engineering B (2 papers)Japanese Journal of Applied Physics (1 paper)Applied Surface Science (1 paper)
Partner nations: Canada Taiwan United States

In The Last Decade

J. B. Webb

18 papers receiving 457 citations

Peers

Countries citing papers authored by J. B. Webb

Since Specialization

Citations

This map shows the geographic impact of J. B. Webb's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. B. Webb with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. B. Webb more than expected).

Fields of papers citing papers by J. B. Webb

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. B. Webb. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. B. Webb. The network helps show where J. B. Webb may publish in the future.

Co-authors

The 25 scholars most cited alongside J. B. Webb, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. B. Webb Line = papers co-authored together J. B. Webb links everyone, so they are left out of the graph.

All Works

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18 of 18 papers shown

#	Work
1	Ammonia molecular beam epitaxy growth of p-type GaN and application to bipolar junction transistors Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. Haffouz, H. Tang, J. A. Bardwell, S. Rolfe, Yuki Shirasuna, Zhao Su-qin, S. Moisa, M. Beaulieu, J. B. Webb	2005	5
2	Effect of template morphology on the efficiency of InGaN∕GaN quantum wells and light-emitting diodes grown by molecular-beam epitaxy Applied Physics Letters ·H. Tang, S. Haffouz, A. Powell, J. A. Bardwell, J. B. Webb	2005	10
3	Thermally stimulated current spectroscopy and photoluminescence of carbon‐doped semi‐insulating GaN grown by ammonia‐based molecular beam epitaxy Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Fang Zhao, D. C. Look, B. Claflin, S. Haffouz, H. Tang, J. B. Webb	2005	13
4	Nitride-based HFETs with carrier confinement layers Materials Science and Engineering B ·Yikun Su, Shoou‐Jinn Chang, Yatin Gupta, Mehmet Cengiz, J. B. Webb, W.H. Lan, Y. T. Cherng, Luis Rodolfo Manosalvas Gómez	2004	3
5	Nitride-based 2DEG photodetectors with a large AC responsivity Solid-State Electronics ·S.J. Chang, Yatin Gupta, Mehmet Cengiz, Y.K. Su, J. B. Webb, J. A. Bardwell, Richard Feuillade, S.M. Loughhead, Pablo Chacón, Y. T. Cherng, W.H. Lan	2003	13
6	On the Carrier Concentration and Hall Mobility in GaN Epilayers Japanese Journal of Applied Physics ·Chih-Hsin Ko, M. Dukek, Yan-Kuin Su, K. Hayasaka, Chenglong Tan, Yatin Gupta, Jinhua Yang, Caroline Slikta Velloso, J. B. Webb, Lu‐Yin Lin	2002	20
7	Scattering lifetimes due to interface roughness with large lateral correlation length inAlxGa1−xN/GaNtwo-dimensional electron gas Physical review. B, Condensed matter ·Hao Tang, J. B. Webb, P. T. Coleridge, J. A. Bardwell, Mehmet Cengiz, Lisa Gale, Sung‐Jae Chang	2002	11
8	Photo-enhanced chemical wet etching of GaN Materials Science and Engineering B ·Mehmet Cengiz, Yan‐Kuin Su, Shoou‐Jinn Chang, W.H. Lan, J. B. Webb, Preston Cratch, Y. T. Cherng	2002	33
9	InGaN/GaN light emitting diodes with a p-down structure IEEE Transactions on Electron Devices ·Ying Su, Shoou‐Jinn Chang, Chih-Hsin Ko, J.F. Chen, Yatin Gupta, 礼次田中, Lu‐Yin Lin, L Maguire, J. B. Webb	2002	22
10	Microstructural analysis of Ti/Al/Ti/Au ohmic contacts to n-AlGaN/GaN Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Verde Alexander, Douglas G. Ivey, J. A. Bardwell, Ernest Kofi-Davis, A. Sauvanet, J. B. Webb	2002	21
11	Properties of carbon-doped GaN Applied Physics Letters ·H. Tang, J. B. Webb, J. A. Bardwell, S. Raymond, J. Salzman, C. Uzan-Saguy	2001	138
12	Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy Solid-State Electronics ·H. Tang, J. B. Webb, J. A. Bardwell, S. Rolfe, 于跃洋	2000	12
13	Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy Applied Physics Letters ·J. B. Webb, H. Tang, S. Rolfe, J. A. Bardwell	1999	139
14	Growth of High Mobility AlGaN/GaN Heterostructures by Ammonia-Molecular Beam Epitaxy physica status solidi (a) ·J. B. Webb, H. Tang, J. A. Bardwell, P. T. Coleridge	1999	4
15	Surface and interface analysis of semiconductor materials Applied Surface Science ·Ki Ryong Kim, J. Y. Lin, Andrew T. S. Wee, K.L. Tan, Z. C. Feng, J. B. Webb	1996	10
16	Deep-level transient spectroscopy of HF-cleaned and sulfur-passivated InP metal/nitride/semiconductor structures Journal of Applied Physics ·D. Landheer, Gholam Hossein Yousefi, J. B. Webb, R. W. M. Kwok, W. M. Lau	1994	17
17	Deep-level transient spectroscopic investigation of the EL2 deep-level in metalorganic chemical vapour deposited Ga_1−xIn_xAs epilayers Canadian Journal of Physics ·Alou B Ballo, J. D. Leslie, J. B. Webb, A. P. Roth, M. Sacilotti, R. A. Masut	1989	3
18	The Crystallization of a-ZnTe Canadian Journal of Physics ·J. B. Webb, Douglas Brodie	1975	4

About J. B. Webb

J. B. Webb is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 18 papers that have together received 478 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (15 papers), Semiconductor materials and devices (10 papers), Ga2O3 and related materials (8 papers), Semiconductor Quantum Structures and Devices (6 papers), ZnO doping and properties (3 papers), Metal and Thin Film Mechanics (2 papers), Advanced Semiconductor Detectors and Materials (1 paper) and Plasma Diagnostics and Applications (1 paper). The work is most often cited by research in Condensed Matter Physics (423 citations), Electronic, Optical and Magnetic Materials (262 citations), Electrical and Electronic Engineering (246 citations), Materials Chemistry (193 citations) and Atomic and Molecular Physics, and Optics (92 citations). J. B. Webb has collaborated with scholars based in Canada, Taiwan and United States. Frequent co-authors include J. A. Bardwell, H. Tang, S. Rolfe, C. Uzan-Saguy, J. Salzman, S. Raymond, Shoou‐Jinn Chang, Y. T. Cherng, W.H. Lan and S. Haffouz. Their work appears in journals such as Applied Physics Letters, Solid-State Electronics, Materials Science and Engineering B, Japanese Journal of Applied Physics and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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