S.J. Lee

891 citations

21 papers · 719 · h-index 15

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic and Optical Devices
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 21
- Advancements in Semiconductor Devices and Circuit Design 13
- Semiconductor materials and devices 13
- Photonic and Optical Devices 6
- Integrated Circuits and Semiconductor Failure Analysis 3
- Thin-Film Transistor Technologies 2
Atomic and Molecular Physics, and Optics 15
- Semiconductor materials and interfaces 12
- Semiconductor Quantum Structures and Devices 4

Co-authors: Dim‐Lee Kwong (17 shared papers)Chunxiang Zhu (5 shared papers)Anyan Du (5 shared papers)Albert Chin (4 shared papers)Jagar Singh (4 shared papers)Shiyang Zhu (3 shared papers)Kevin J. Chen (1 shared paper)G. Q. Lo (7 shared papers)
Journals: IEEE Electron Device Letters (12 papers)Thin Solid Films (2 papers)IEEE Transactions on Nanotechnology (1 paper)IEEE Photonics Technology Letters (1 paper)Solid-State Electronics (1 paper)
Partner nations: Singapore United States China

In The Last Decade

S.J. Lee

21 papers receiving 675 citations

Peers

Countries citing papers authored by S.J. Lee

Since Specialization

Citations

This map shows the geographic impact of S.J. Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.J. Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.J. Lee more than expected).

Fields of papers citing papers by S.J. Lee

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.J. Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.J. Lee. The network helps show where S.J. Lee may publish in the future.

Co-authors

The 25 scholars most cited alongside S.J. Lee, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S.J. Lee Line = papers co-authored together S.J. Lee links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 21 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide IEEE Electron Device Letters ·S. Zhu, Kevin J. Chen, M.-F. Li, S.J. Lee, Jagar Singh, Chunxiang Zhu, Anyan Du, Ching‐Hsuan Tung, Albert Chin, Dim‐Lee Kwong	2004	169
2	Schottky-Barrier S/D MOSFETs With High-<tex>$Kappa$</tex>Gate Dielectrics and Metal-Gate Electrode IEEE Electron Device Letters ·Shiyang Zhu, H.Y. Yu, S. J. Whang, J.H. Chen, Chen Shen, Chunxiang Zhu, S.J. Lee, M.F. Li, D.S.H. Chan, Won Jong Yoo, Anyan Du, C. H. Tung, Jagar Singh, Albert Chin, Dim‐Lee Kwong	2004	88
3	Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate IEEE Electron Device Letters ·Shiyang Zhu, Rui Li, S.J. Lee, M.F. Li, Anyan Du, Jagar Singh, Chunxiang Zhu, Albert Chin, Dim‐Lee Kwong	2005	83
4	Electron mobility enhancement using ultrathin pure Ge on Si substrate IEEE Electron Device Letters ·Chia Ching Yeo, B.J. Cho, Fei Gao, S.J. Lee, M. H. Lee, Chia-Hao Yu, C. W. Liu, Lei Tang, T.W. Lee	2005	44
5	Germanium p- and n-MOSFETs fabricated with novel surface passivation (plasma-PH/sub 3/ and thin AlN) and TaN/HfO/sub 2/ gate stack S. J. Whang, S.J. Lee, Fei Gao, Nan Wu, Chunxiang Zhu, Ji Sheng Pan, Lei Tang, Dim‐Lee Kwong	2005	42
6	Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology Thin Solid Films ·Rui Li, Hongyan Yao, S.J. Lee, Dongzhi Chi, Mingbin Yu, G. Q. Lo, Dim‐Lee Kwong	2005	35
7	Evanescent-Coupled Ge p-i-n Photodetectors on Si-Waveguide With SEG-Ge and Comparative Study of Lateral and Vertical p-i-n Configurations IEEE Electron Device Letters ·J. Wang, W.Y. Loh, K.T. Chua, H. Zang, Yujie Xiong, Ter-Hoe Loh, Ming Yu, S.J. Lee, Guo‐Qiang Lo, Dim‐Lee Kwong	2008	35
8	Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate IEEE Electron Device Letters ·Jianqiang Lin, S.J. Lee, H. J. Oh, G. Q. Lo, Dim‐Lee Kwong, D. Z.	2008	31
9	Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode Solid-State Electronics ·Shiyang Zhu, H.Y. Yu, J.D. Chen, S. J. Whang, J.H. Chen, Chen Shen, Chunxiang Zhu, S.J. Lee, M.F. Li, D.S.H. Chan, Won Jong Yoo, Anyan Du, C. H. Tung, Jagar Singh, Albert Chin, Dim‐Lee Kwong	2004	28
10	Characterization and reliability of dual high-k gate dielectric stack (poly-Si-HfO₂-SiO₂) prepared by in situ RTCVD process for system-on-chip applications IEEE Electron Device Letters ·S.J. Lee, Chang‐Hwan Choi, A. Kamath, Robert D. Clark, Dim‐Lee Kwong	2003	25
11	Pt-Germanide Schottky source/drain Germanium p-MOSFET with HfO/sub 2/ gate dielectric and TaN gate electrode IEEE Electron Device Letters ·Rui Li, S.J. Lee, Hongyan Yao, Dongzhi Chi, Mingbin Yu, Dim‐Lee Kwong	2006	24
12	Low-Voltage High-Speed (18 GHz/1 V) Evanescent-Coupled Thin-Film-Ge Lateral PIN Photodetectors Integrated on Si Waveguide IEEE Photonics Technology Letters ·J. Wang, W.Y. Loh, K.T. Chua, H. Zang, Yujie Xiong, Shuyin Tan, Mingbin Yu, S.J. Lee, G. Q. Lo, Dim‐Lee Kwong	2008	23
13	Dark-Current Suppression in Metal–Germanium–Metal Photodetectors Through Dopant-Segregation in NiGe—Schottky Barrier IEEE Electron Device Letters ·H. Zang, S.J. Lee, W.Y. Loh, J. Wang, Kang-Bin Chua, Mingbin Yu, B.J. Cho, G. Q. Lo, Dim‐Lee Kwong	2008	21
14	Ge diffusion and solid phase epitaxy growth to form Si1−xGex/Si and Ge on insulator structure Thin Solid Films ·Fei Gao, S.J. Lee, S. Balakumar, Anyan Du, Yong-Lim Foo, Dim‐Lee Kwong	2005	18
15	Temperature Dependence of Carrier Transport of a Silicon Nanowire Schottky-Barrier Field-Effect Transistor IEEE Transactions on Nanotechnology ·Weifeng Yang, S.J. Lee, Gengchiau Liang, Rahul Eswar, Ziqi Sun, Dim‐Lee Kwong	2008	15
16	Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget IEEE Electron Device Letters ·W.Y. Loh, J. Wang, Jian Dong Ye, Rui Yang, Hai Son Nguyen, K.T. Chua, Junfeng Song, Ter-Hoe Loh, Yujie Xiong, S.J. Lee, Mingbin Yu, G. Q. Lo, Dim‐Lee Kwong	2007	12
17	NMOS Compatible Work Function of TaN Metal Gate With Erbium-Oxide-Doped Hafnium Oxide Gate Dielectric IEEE Electron Device Letters ·Jingde Chen, Xiaopeng Wang, Mingfu Li, S.J. Lee, Mingbin Yu, Chen Shen, Yee‐Chia Yeo	2007	9
18	Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform National University of Singapore ·J. Wang, W.Y. Loh, H. Zang, Mingbin Yu, K.T. Chua, Ter-Hoe Loh, Jian Dong Ye, Rui Yang, X.L. Wang, S.J. Lee, B.J. Cho, G. Q. Lo, Dim‐Lee Kwong	2007	7
19	Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregation National University of Singapore ·Dongzhi Chi, Hongyan Yao, Siao Li Liew, Chuandong Tan, Chee Tee Chua, K.C. Chua, Robert K.Y. Li, S.J. Lee	2007	4
20	Enhanced Sensitivity of Small-Size (With 1-$\mu \hbox{m}$ Gate Length) Junction-Field-Effect-Transistor-Based Germanium Photodetector Using Two-Step Germanium Epitaxy by Ultrahigh Vacuum Chemical Vapor Deposition IEEE Electron Device Letters ·J. Wang, H. Zang, Mingbin Yu, Yujie Xiong, G. Q. Lo, Dim‐Lee Kwong, S.J. Lee	2009	3

About S.J. Lee

S.J. Lee is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Infectious Diseases, having authored 21 papers that have together received 719 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (13 papers), Semiconductor materials and devices (13 papers), Semiconductor materials and interfaces (12 papers), Photonic and Optical Devices (6 papers), Nanowire Synthesis and Applications (4 papers), Semiconductor Quantum Structures and Devices (4 papers), Integrated Circuits and Semiconductor Failure Analysis (3 papers) and Thin-Film Transistor Technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (685 citations), Atomic and Molecular Physics, and Optics (362 citations), Biomedical Engineering (147 citations), Materials Chemistry (109 citations) and Condensed Matter Physics (16 citations). S.J. Lee has collaborated with scholars based in Singapore, United States and China. Frequent co-authors include Dim‐Lee Kwong, Chunxiang Zhu, Anyan Du, Albert Chin, Jagar Singh, Shiyang Zhu, Kevin J. Chen, G. Q. Lo, M.-F. Li and Ching‐Hsuan Tung. Their work appears in journals such as IEEE Electron Device Letters, Thin Solid Films, IEEE Transactions on Nanotechnology, IEEE Photonics Technology Letters and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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S.J. Lee

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