Jianqiang Lin

1.3k citations

44 papers · 920 indexed · h-index 21

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 35
- Advancements in Semiconductor Devices and Circuit Design 33
- Advanced Memory and Neural Computing 7
- Integrated Circuits and Semiconductor Failure Analysis 7
- Ferroelectric and Negative Capacitance Devices 5
Biomedical Engineering top 10%
- Nanowire Synthesis and Applications 10
Atomic and Molecular Physics, and Optics
Environmental Chemistry
Polymers and Plastics
- Transition Metal Oxide Nanomaterials 3
Materials Chemistry
- Electronic and Structural Properties of Oxides 9

Co-authors: Jesús A. del Alamo D.A. AntoniadisXin ZhaoAlon Vardi Wenjie Lu Supratik Guha Xiangmei Liu Jianqun Lin
Cited by: Electrical and Electronic Engineering Biomedical Engineering Atomic and Molecular Physics, and Optics
Journals: IEEE Transactions on Electron Devices (10 papers)IEEE Electron Device Letters (6 papers)IEEE Transactions on Nuclear Science (3 papers)
Partner nations: United States Singapore Switzerland

In The Last Decade

Jianqiang Lin

43 papers receiving 905 citations

Peers

Countries citing papers authored by Jianqiang Lin

Since Specialization

Citations

This map shows the geographic impact of Jianqiang Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jianqiang Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jianqiang Lin more than expected).

Fields of papers citing papers by Jianqiang Lin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jianqiang Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jianqiang Lin. The network helps show where Jianqiang Lin may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Jianqiang Lin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Jianqiang Lin Line = papers co-authored together Jianqiang Lin links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A Scaling Study of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs IEEE Transactions on Electron Devices ·Jianqiang Lin,Xin Zhao,Blandine Dumont,D.A. Antoniadis,Jesús A. del Alamo	2019	4
2	Vanadium Dioxide Circuits Emulate Neurological Disorders Frontiers in Neuroscience ·Jianqiang Lin,Supratik Guha,Shriram Ramanathan	2018	22
3	Understanding Charge Collection Mechanisms in InGaAs FinFETs Using High-Speed Pulsed-Laser Transient Testing With Tunable Wavelength IEEE Transactions on Nuclear Science ·Kai Ni,Andrew L. Sternberg,En Xia Zhang,John A. Kozub,Rong Jiang,Ronald D. Schrimpf,Robert A. Reed,Daniel M. Fleetwood,Michael L. Alles,Dale McMorrow,Jianqiang Lin,Alon Vardi,Jesús A. del Alamo	2017	15
4	CMOS beyond Si: Nanometer-Scale III-V MOSFETs Jesús A. del Alamo,Xiaowei Cai,Jianqiang Lin,Wenjie Lu,Alon Vardi,Xin Zhao	2017	6
5	Electric-field induced F⁻migration in self-aligned InGaAs MOSFETs and mitigation Xiaowei Cai,Jianqiang Lin,D.A. Antoniadis,Jesús A. del Alamo	2016	5
6	Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum-Well MOSFETs IEEE Transactions on Nuclear Science ·Kai Ni,En Xia Zhang,Ronald D. Schrimpf,Daniel M. Fleetwood,Robert A. Reed,Michael L. Alles,Jianqiang Lin,Jesús A. del Alamo	2016	14
7	Nanometer-Scale III-V MOSFETs IEEE Journal of the Electron Devices Society ·Jesús A. del Alamo,D.A. Antoniadis,Jianqiang Lin,Wenjie Lu,Alon Vardi,Xin Zhao	2016	57
8	Pulsed-laser transient testing with tunable wavelength and high resolution for high mobility MOSFETs Kai Ni,Andrew L. Sternberg,En Xia Zhang,John A. Kozub,Rong Jiang,Ronald D. Schrimpf,Robert A. Reed,Daniel M. Fleetwood,Michael L. Alles,Jianqiang Lin,Alon Vardi,Jesús A. del Alamo	2016	0
9	Record Maximum Transconductance of 3.45 mS/ for III-V FETs IEEE Electron Device Letters ·Jianqiang Lin,Xiaowei Cai,José Luiz Castro Aguiar Filho,D.A. Antoniadis,Jesús A. del Alamo	2016	51
10	Impact of Intrinsic Channel Scaling on InGaAs Quantum-Well MOSFETs IEEE Transactions on Electron Devices ·Jianqiang Lin,D.A. Antoniadis,Jesús A. del Alamo	2015	31
11	III-V MOSFETs for Future CMOS Jesús A. del Alamo,D.A. Antoniadis,Jianqiang Lin,Wenjie Lu,Alon Vardi,Xin Zhao	2015	20
12	Markerless deletion of a rhodanese inAcidithiobacillus caldusMTH-04 WIT transactions on biomedicine and health ·Chengjia Zhang,Linxu Chen,Christian Zellner,Shanthi Saravana,Jianqun Lin,Jianqiang Lin	2014	1
13	Single-Event Transient Response of InGaAs MOSFETs IEEE Transactions on Nuclear Science ·Kai Ni,En Xia Zhang,Nicholas C. Hooten,Mikheeva Ni,Michael W. McCurdy,Andrew L. Sternberg,Ronald D. Schrimpf,Robert A. Reed,Daniel M. Fleetwood,Michael L. Alles,Tae‐Woo Kim,Jianqiang Lin,Jesús A. del Alamo	2014	23
14	Off-State Leakage Induced by Band-to-Band Tunneling and Floating-Body Bipolar Effect in InGaAs Quantum-Well MOSFETs IEEE Electron Device Letters ·Jianqiang Lin,D.A. Antoniadis,Jesús A. del Alamo	2014	40
15	InGaAs MOSFETs for CMOS: Recent advances in process technology Jesús A. del Alamo,D.A. Antoniadis,Mohammad Ali Khozeimeh,Do Hyung Kim,Muji Muji,Jianqiang Lin,Wenjie Lu,Alon Vardi,Xin Zhao	2013	39
16	A new self-aligned quantum-well MOSFET architecture fabricated by a scalable tight-pitch process Jianqiang Lin,Xin Zhao,Tao Yu,D.A. Antoniadis,Jesús A. del Alamo	2013	44
17	Acidithiobacillus caldus Sulfur Oxidation Model Based on Transcriptome Analysis between the Wild Type and Sulfur Oxygenase Reductase Defective Mutant PLoS ONE ·Linxu Chen,Yilin Ren,Jianqun Lin,Xiangmei Liu,Xin Pang,Jianqiang Lin	2012	103
18	A Self-Aligned InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process Applied Physics Express ·Jianqiang Lin,Tae‐Woo Kim,D.A. Antoniadis,Jesús A. del Alamo	2012	35
19	Sub-30 nm InAs Quantum-Well MOSFETs with self-aligned metal contacts and Sub-1 nm EOT HfO<inf>2</inf> insulator Jianqiang Lin,D.A. Antoniadis,Jesús A. del Alamo	2012	27
20	Strained ${\rm n}$-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance IEEE Transactions on Electron Devices ·Kah‐Wee Ang,Jianqiang Lin,Chih-Hang Tung,Narayanan Balasubramanian,Ganesh S. Samudra,Yee‐Chia Yeo	2008	22

About Jianqiang Lin

Jianqiang Lin is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Materials Chemistry, Polymers and Plastics and Electrochemistry, having authored 44 papers that have together received 920 indexed citations. Recurring topics across this work include Semiconductor materials and devices (35 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers), Nanowire Synthesis and Applications (10 papers), Electronic and Structural Properties of Oxides (9 papers), Advanced Memory and Neural Computing (7 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Ferroelectric and Negative Capacitance Devices (5 papers) and Transition Metal Oxide Nanomaterials (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (792 citations), Biomedical Engineering (280 citations), Atomic and Molecular Physics, and Optics (140 citations), Environmental Chemistry (42 citations) and Polymers and Plastics (47 citations). Jianqiang Lin has collaborated with scholars based in United States, Singapore and Switzerland. Frequent co-authors include Jesús A. del Alamo, D.A. Antoniadis, Xin Zhao, Alon Vardi, Wenjie Lu, Supratik Guha, Xiangmei Liu, Jianqun Lin, Xin Pang and Yilin Ren. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IEEE Transactions on Nuclear Science, IEEE Journal of the Electron Devices Society and Nanoscale.

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