W. Gerlach

723 total citations
33 papers, 539 citations indexed

About

W. Gerlach is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, W. Gerlach has authored 33 papers receiving a total of 539 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in W. Gerlach's work include Silicon Carbide Semiconductor Technologies (17 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Silicon and Solar Cell Technologies (11 papers). W. Gerlach is often cited by papers focused on Silicon Carbide Semiconductor Technologies (17 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers) and Silicon and Solar Cell Technologies (11 papers). W. Gerlach collaborates with scholars based in Germany and Egypt. W. Gerlach's co-authors include Heinrich Schlangenotto, J.B. Pełka, Abdelhalim Zekry, Josef Lutz, D. Reznik, Mahmoud Hamouda, Ningsong Qu, T. Drüsedau, Martin Fuchs and R. Bindemann and has published in prestigious journals such as IEEE Transactions on Electron Devices, Journal of Non-Crystalline Solids and Solid-State Electronics.

In The Last Decade

W. Gerlach

31 papers receiving 509 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
W. Gerlach Germany	11	490	164	102	45	21	33	539
A.J. Auberton‐Hervé France	14	641 1.3×	90 0.5×	93 0.9×	85 1.9×	42 2.0×	50	692
Manabu Hamagaki Japan	13	332 0.7×	79 0.5×	137 1.3×	33 0.7×	65 3.1×	39	413
J. G. Werthen United States	17	664 1.4×	378 2.3×	193 1.9×	88 2.0×	16 0.8×	48	720
M.D. Sirkis United States	14	300 0.6×	228 1.4×	77 0.8×	25 0.6×	12 0.6×	34	383
L. Henry United States	13	586 1.2×	211 1.3×	76 0.7×	51 1.1×	38 1.8×	62	678
І. Bolshakova Ukraine	11	203 0.4×	98 0.6×	57 0.6×	45 1.0×	13 0.6×	49	285
Shang-Yi Chiang United States	11	565 1.2×	307 1.9×	113 1.1×	41 0.9×	42 2.0×	31	637
M. L. Polignano Italy	14	563 1.1×	259 1.6×	96 0.9×	66 1.5×	70 3.3×	94	643
Katsuya Nomura Japan	12	274 0.6×	121 0.7×	96 0.9×	37 0.8×	14 0.7×	29	386
M.A. Gibbon United Kingdom	9	359 0.7×	185 1.1×	68 0.7×	18 0.4×	17 0.8×	22	423

Countries citing papers authored by W. Gerlach

Since Specialization

Citations

This map shows the geographic impact of W. Gerlach's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Gerlach with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Gerlach more than expected).

Fields of papers citing papers by W. Gerlach

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Gerlach. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Gerlach. The network helps show where W. Gerlach may publish in the future.

Co-authorship network of co-authors of W. Gerlach

This figure shows the co-authorship network connecting the top 25 collaborators of W. Gerlach. A scholar is included among the top collaborators of W. Gerlach based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Gerlach. W. Gerlach is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Reznik, D., et al.. (1998). Bistability and hysteresis in the characteristics of segmented-anode lateral IGBTs. IEEE Transactions on Electron Devices. 45(7). 1575–1579. 8 indexed citations

Lutz, Josef, et al.. (1998). IMPATT oscillations in fast recovery diodes due to temporarily charged radiation-induced deep levels. Solid-State Electronics. 42(6). 931–938. 21 indexed citations

Reznik, D. & W. Gerlach. (1996). Generalised drift-diffusion model of bipolar transport in semiconductors. Electrical Engineering. 79(3). 219–225. 3 indexed citations

Gerlach, W.. (1996). PPM analysis by using quadrupole mass spectrometers with closed ion source. Vacuum. 47(4). 371–374. 2 indexed citations

Gerlach, W., et al.. (1996). On the turn-off behaviour of the NPT-IGBT under clamped inductive loads. Solid-State Electronics. 39(1). 59–67. 15 indexed citations

Gerlach, W., et al.. (1996). On the blocking capability of a planar p-n junction under the influence of a high-voltage interconnection - a 3-D simulation. IEEE Transactions on Electron Devices. 43(1). 165–169. 3 indexed citations

Gerlach, W., et al.. (1995). Two-dimensional analytical models of the carrier distribution in the on-state of the IGBT. Solid-State Electronics. 38(10). 1781–1790. 10 indexed citations

Reznik, D. & W. Gerlach. (1995). The effect of nonlinear coupling of reciprocal mobilities on the charge carrier distribution in semiconductor power devices. Solid-State Electronics. 38(2). 437–442. 5 indexed citations

Gerlach, W., et al.. (1993). Influence of interconnections onto the breakdown voltage of planar high-voltage p-n junctions. IEEE Transactions on Electron Devices. 40(2). 439–447. 19 indexed citations

10.

Gerlach, W., et al.. (1992). Determination of the carrier lifetime in power transistors from the measurement of the transient collector current. Electrical Engineering. 75(2). 137–146. 1 indexed citations

11.

Gerlach, W., et al.. (1992). The reverse voltage limit of planarpn-junctions with field-plates. Electrical Engineering. 75(3). 223–229. 1 indexed citations

12.

Gerlach, W., et al.. (1988). The contour of an optimal field plate-an analytical approach. IEEE Transactions on Electron Devices. 35(5). 684–688. 13 indexed citations

13.

Gerlach, W., et al.. (1986). Numerische Untersuchung des Sperrverhaltens von planarenpn-Übergängen mit Feldplatten. Electrical Engineering. 69(3). 165–174. 2 indexed citations

14.

Gerlach, W., et al.. (1984). The influence of surface charge and bevel angle on the blocking behavior of a high-voltage p⁺-n-n⁺device. IEEE Transactions on Electron Devices. 31(6). 733–738. 7 indexed citations

15.

Hamouda, Mahmoud & W. Gerlach. (1983). Influence of the device parameters on the static properties of pin diodes at high current densities in the temperature range from 77 to 500 K. Electrical Engineering. 66(3). 143–150. 1 indexed citations

16.

Gerlach, W.. (1983). Theorie der PCD-Methode f�r Licht geringer Eindringtiefe. Electrical Engineering. 66(5-6). 317–325. 2 indexed citations

17.

Gerlach, W., et al.. (1983). Blocking capability of planar devices with field limiting rings. Solid-State Electronics. 26(8). 739–745. 53 indexed citations

18.

Gerlach, W.. (1979). Thyristoren. 5 indexed citations

19.

Schlangenotto, Heinrich & W. Gerlach. (1969). On the effective carrier lifetime in p-s-n rectifiers at high injection levels. Solid-State Electronics. 12(4). 267–275. 70 indexed citations

20.

Gerlach, W., et al.. (1967). Gold silicon phase diagram. Solid-State Electronics. 10(6). 589–592. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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