D. Jousse

752 total citations
36 papers, 645 citations indexed

About

D. Jousse is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Jousse has authored 36 papers receiving a total of 645 indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 24 papers in Materials Chemistry and 7 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Jousse's work include Thin-Film Transistor Technologies (28 papers), Semiconductor materials and devices (18 papers) and Silicon Nanostructures and Photoluminescence (18 papers). D. Jousse is often cited by papers focused on Thin-Film Transistor Technologies (28 papers), Semiconductor materials and devices (18 papers) and Silicon Nanostructures and Photoluminescence (18 papers). D. Jousse collaborates with scholars based in France, United States and Brazil. D. Jousse's co-authors include Jerzy Kanicki, F. Vaillant, Pierre Viktorovitch, E. Bustarret, J. H. Stathis, I. Chambouleyron, Carlos José Leopoldo Constantino, F. Boulitrop, J.C. Bruyère and D. T. Krick and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

D. Jousse

36 papers receiving 604 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Jousse France 16 613 463 116 63 32 36 645
D. Slobodin United States 12 516 0.8× 392 0.8× 62 0.5× 36 0.6× 19 0.6× 26 556
J. Beichler Germany 8 721 1.2× 572 1.2× 111 1.0× 60 1.0× 75 2.3× 13 751
D. Sayah France 10 257 0.4× 294 0.6× 75 0.6× 40 0.6× 6 0.2× 27 369
Y. Kishi Japan 9 354 0.6× 268 0.6× 47 0.4× 18 0.3× 9 0.3× 22 400
R R Varma United Kingdom 11 367 0.6× 124 0.3× 287 2.5× 27 0.4× 12 0.4× 15 449
A. V. Gelatos United States 12 565 0.9× 373 0.8× 112 1.0× 26 0.4× 5 0.2× 28 600
N. Kornilios Greece 8 227 0.4× 208 0.4× 67 0.6× 149 2.4× 25 0.8× 22 349
E. Terzini Italy 8 418 0.7× 294 0.6× 101 0.9× 81 1.3× 4 0.1× 26 472
J. Fritsche Germany 16 578 0.9× 564 1.2× 185 1.6× 17 0.3× 7 0.2× 22 643
N. Lakshminarayan South Korea 10 315 0.5× 248 0.5× 66 0.6× 34 0.5× 6 0.2× 16 368

Countries citing papers authored by D. Jousse

Since Specialization
Citations

This map shows the geographic impact of D. Jousse's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Jousse with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Jousse more than expected).

Fields of papers citing papers by D. Jousse

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Jousse. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Jousse. The network helps show where D. Jousse may publish in the future.

Co-authorship network of co-authors of D. Jousse

This figure shows the co-authorship network connecting the top 25 collaborators of D. Jousse. A scholar is included among the top collaborators of D. Jousse based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Jousse. D. Jousse is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jousse, D., S.L. Delage, & Shankar S. Iyer. (1991). Grain-boundary states and hydrogenation of fine-grained polycrystalline silicon films deposited by molecular beams. Philosophical Magazine B. 63(2). 443–455. 26 indexed citations
2.
Kanicki, Jerzy, D. Jousse, A. V. Gelatos, & M. S. Crowder. (1989). Light-induced effects in hydrogenated amorphous nitrogen-rich silicon nitride films. Journal of Non-Crystalline Solids. 114. 612–614. 10 indexed citations
3.
Jousse, D., Jerzy Kanicki, & J. H. Stathis. (1989). Observation of multiple silicon dangling bond configurations in silicon nitride. Applied Physics Letters. 54(11). 1043–1045. 45 indexed citations
4.
Jousse, D., et al.. (1988). Electron Spin Resonance Spectroscopy Of Defects In Low Temperature Dielectric Films. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 946. 227–227. 4 indexed citations
5.
Vaillant, F., et al.. (1988). Study of localized states in amorphous chalcogenide Sb2S3 films. Journal of Non-Crystalline Solids. 101(2-3). 151–155. 15 indexed citations
6.
Delage, S.L., S.J. Jeng, D. Jousse, & Subramanian S. Iyer. (1987). Structural and Electrical Properties of Molecular Beam Deposited Polycrystalline Silicon. MRS Proceedings. 106. 1 indexed citations
7.
Jousse, D., S.L. Delage, Shankar S. Iyer, & M. S. Crowder. (1987). Hydrogen Passivation of Grain Boundaries in Polycrystalline Silicon Deposited by Molecular Beams. MRS Proceedings. 106. 2 indexed citations
8.
Vaillant, F. & D. Jousse. (1986). The Photoconductivity Exponent For Recombination At Dangling Bonds In a-Si:H. MRS Proceedings. 70. 1 indexed citations
9.
Jousse, D., E. Bustarret, A. Deneuville, & J.P. Stoquert. (1986). rf-sputtered B-dopeda-Si:H anda-Si-B-H alloys. Physical review. B, Condensed matter. 34(10). 7031–7044. 11 indexed citations
10.
Vaillant, F. & D. Jousse. (1986). Recombination at dangling bonds and steady-state photoconductivity ina-Si:H. Physical review. B, Condensed matter. 34(6). 4088–4098. 81 indexed citations
11.
Jousse, D., et al.. (1985). Photoconductivity of lightly boron doped a-Si:H. Journal of Non-Crystalline Solids. 77-78. 627–630. 16 indexed citations
12.
13.
Jousse, D. & S. Deleonibus. (1983). Capacitance temperature analysis of midgap states in hydrogenated amorphous silicon. Journal of Applied Physics. 54(7). 4001–4007. 21 indexed citations
14.
Jousse, D., Carlos José Leopoldo Constantino, & I. Chambouleyron. (1983). Highly conductive and transparent amorphous tin oxide. Journal of Applied Physics. 54(1). 431–434. 40 indexed citations
15.
Jousse, D., et al.. (1983). Thickness dependent properties of sputtered a-Si:H from Raman and conductivity measurement. Journal of Non-Crystalline Solids. 59-60. 185–188. 9 indexed citations
16.
Jousse, D.. (1983). Hall effect analysis in highly doped SnO2 films. Journal of Non-Crystalline Solids. 59-60. 637–640. 2 indexed citations
17.
Chambouleyron, I., et al.. (1981). ELECTRICAL AND OPTICAL PROPERTIES OF AMORPHOUS TIN OXIDE. Le Journal de Physique Colloques. 42(C4). C4–1009. 3 indexed citations
18.
Viktorovitch, Pierre & D. Jousse. (1980). Determination of the electronic density of states in hydrogenated amorphous silicon (a-SiH) from Schottky diode capacitance-voltage and conductance-voltage measurements. Journal of Non-Crystalline Solids. 35-36. 569–574. 43 indexed citations
19.
Jousse, D., et al.. (1980). Light-induced effects in Schottky diodes on hydrogenated amorphous silicon. Applied Physics Letters. 37(2). 208–211. 36 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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