S. Hall

2.9k total citations · 1 hit paper
106 papers, 2.1k citations indexed

About

S. Hall is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, S. Hall has authored 106 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 89 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 17 papers in Materials Chemistry. Recurrent topics in S. Hall's work include Semiconductor materials and devices (60 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). S. Hall is often cited by papers focused on Semiconductor materials and devices (60 papers), Advancements in Semiconductor Devices and Circuit Design (37 papers) and Integrated Circuits and Semiconductor Failure Analysis (13 papers). S. Hall collaborates with scholars based in United Kingdom, United States and Sweden. S. Hall's co-authors include Howard L. Heck, E. H. Rutter, S. H. White, Robert Maddock, Ivona Z. Mitrović, Paul G. Huray, P. Ashburn, Steven G. Pytel, J. Keller and Ken McClay and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

S. Hall

101 papers receiving 1.9k citations

Hit Papers

Advanced Signal Integrity for High‐Speed Digital Designs 2008 2026 2014 2020 2008 100 200 300 400

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Hall United Kingdom 21 1.4k 416 208 182 178 106 2.1k
Hassina Bilheux United States 25 469 0.3× 237 0.6× 373 1.8× 286 1.6× 173 1.0× 125 2.4k
G. Frei Switzerland 22 412 0.3× 595 1.4× 494 2.4× 277 1.5× 279 1.6× 37 1.9k
Jorge O. Parra United States 19 371 0.3× 592 1.4× 101 0.5× 33 0.2× 124 0.7× 122 1.2k
M. Klinkmüller Germany 9 374 0.3× 123 0.3× 119 0.6× 96 0.5× 271 1.5× 14 1.0k
S. M. Johnson United States 26 1.6k 1.2× 134 0.3× 425 2.0× 253 1.4× 1.0k 5.8× 136 2.4k
Ch. Hollenstein Switzerland 23 971 0.7× 389 0.9× 354 1.7× 258 1.4× 355 2.0× 64 1.9k
Richard James United Kingdom 20 589 0.4× 81 0.2× 439 2.1× 245 1.3× 390 2.2× 73 1.6k
Leonard M. Hanssen United States 25 265 0.2× 154 0.4× 508 2.4× 575 3.2× 372 2.1× 144 1.8k
R. H. Nilson United States 25 453 0.3× 385 0.9× 204 1.0× 75 0.4× 44 0.2× 77 2.0k
D. K. Paul India 21 512 0.4× 134 0.3× 624 3.0× 33 0.2× 108 0.6× 72 1.9k

Countries citing papers authored by S. Hall

Since Specialization
Citations

This map shows the geographic impact of S. Hall's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Hall with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Hall more than expected).

Fields of papers citing papers by S. Hall

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Hall. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Hall. The network helps show where S. Hall may publish in the future.

Co-authorship network of co-authors of S. Hall

This figure shows the co-authorship network connecting the top 25 collaborators of S. Hall. A scholar is included among the top collaborators of S. Hall based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Hall. S. Hall is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fang, Yuxiao, Chun Zhao, S. Hall, et al.. (2019). Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique. Radiation Physics and Chemistry. 170. 108644–108644. 2 indexed citations
2.
Hall, S., et al.. (2019). A Smarter Approach to Infrastructure Planning. 1 indexed citations
3.
Dowrick, Thomas, Liam McDaid, & S. Hall. (2018). Fan-in analysis of a leaky integrator circuit using charge transfer synapses. Neurocomputing. 314. 78–85. 2 indexed citations
4.
Sedghi, Naser, Hongfei Li, Karl Dawson, et al.. (2017). The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters. 110(10). 64 indexed citations
5.
Mitrović, Ivona Z., Ayendra Weerakkody, Naser Sedghi, et al.. (2016). Tunnel-barrier rectifiers for optical nantennas. ePrints Soton (University of Southampton). 2 indexed citations
6.
Mitrović, Ivona Z., S. Hall, David Hesp, et al.. (2015). Atomic-layer deposited thulium oxide as a passivation layer on germanium. Journal of Applied Physics. 117(21). 6 indexed citations
7.
Uchino, T., et al.. (2012). Improved vertical MOSFET performance using an epitaxial channel and a stacked silicon-insulator structure. Semiconductor Science and Technology. 27(6). 62002–62002. 3 indexed citations
8.
Mitrović, Ivona Z., S. Hall, Naser Sedghi, et al.. (2012). On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks. Journal of Applied Physics. 112(4). 6 indexed citations
9.
Engström, Olof, Bahman Raeissi, Ivona Z. Mitrović, et al.. (2010). Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers. Journal of Telecommunications and Information Technology. 10–19. 3 indexed citations
10.
Engström, Olof, Bahman Raeissi, Ivona Z. Mitrović, et al.. (2010). Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers. Journal of Telecommunications and Information Technology. 81–90. 1 indexed citations
11.
Hurley, Paul K., K. Cherkaoui, Eileen O’Connor, et al.. (2008). Interface Defects in HfO2, LaSiOx, and Gd2O3 High-k/MetalGate Structures on Silicon. Chalmers Publication Library (Chalmers University of Technology). 3 indexed citations
12.
Hall, S., et al.. (2007). Multigigahertz Causal Transmission Line Modeling Methodology Using a 3-D Hemispherical Surface Roughness Approach. IEEE Transactions on Microwave Theory and Techniques. 55(12). 2614–2624. 113 indexed citations
13.
Hall, S., et al.. (2005). Modeling requirements for transmission lines in multi-gigabit systems. Electrical Performance of Electronic Packaging. 39. 67–70. 12 indexed citations
14.
Lu, Yang, Octavian Buiu, S. Hall, & Paul K. Hurley. (2005). Optical and electrical characterization of hafnium oxide deposited by MOCVD. Microelectronics Reliability. 45(5-6). 965–968. 9 indexed citations
16.
Bonar, J. M., et al.. (1999). Leakage current mechanisms associated with selective epitaxy in SiGe heterojunction bipolar transistors. ePrints Soton (University of Southampton). 4 indexed citations
17.
Keller, J., S. Hall, Chris Dart, & Ken McClay. (1995). The geometry and evolution of a transpressional strike-slip system: the Carboneras fault, SE Spain. Journal of the Geological Society. 152(2). 339–351. 62 indexed citations
19.
Hall, S. & S. W. Bailey. (1979). Cation Ordering Pattern in Amesite. Clays and Clay Minerals. 27(4). 241–247. 15 indexed citations
20.
Hall, S. & S. W. Bailey. (1976). Amesite from Antarctica. American Mineralogist. 61. 497–499. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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