P. Hesto

1.0k total citations
62 papers, 688 citations indexed

About

P. Hesto is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, P. Hesto has authored 62 papers receiving a total of 688 indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Electrical and Electronic Engineering, 39 papers in Atomic and Molecular Physics, and Optics and 7 papers in Materials Chemistry. Recurrent topics in P. Hesto's work include Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Semiconductor Quantum Structures and Devices (16 papers). P. Hesto is often cited by papers focused on Semiconductor materials and devices (36 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers) and Semiconductor Quantum Structures and Devices (16 papers). P. Hesto collaborates with scholars based in France, Germany and Switzerland. P. Hesto's co-authors include Philippe Dollfus, S. Galdin, Arnaud Bournel, Éric Cassan, P. Bruno, Sylvain Barraud, M. F. Goffman, R. Castagné, J.P. Bourgoin and Gaëtan F. Tremblay and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

P. Hesto

58 papers receiving 648 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P. Hesto France	15	532	354	143	84	59	62	688
A. Souifi France	13	470 0.9×	290 0.8×	239 1.7×	157 1.9×	36 0.6×	64	600
Per‐Erik Hellström Sweden	16	725 1.4×	204 0.6×	154 1.1×	168 2.0×	41 0.7×	104	811
Julian P. Noad Canada	16	512 1.0×	272 0.8×	119 0.8×	138 1.6×	29 0.5×	66	627
D. Biswas India	13	410 0.8×	294 0.8×	136 1.0×	114 1.4×	98 1.7×	44	524
Gayle Echo Thayer United States	8	204 0.4×	254 0.7×	123 0.9×	93 1.1×	41 0.7×	13	395
Igor Altfeder United States	12	140 0.3×	348 1.0×	169 1.2×	83 1.0×	81 1.4×	25	512
Taejoon Kouh South Korea	11	236 0.4×	227 0.6×	89 0.6×	90 1.1×	50 0.8×	45	400
F. Uherek Slovakia	13	240 0.5×	166 0.5×	101 0.7×	128 1.5×	79 1.3×	73	438
Ichiro Shiraki Japan	10	208 0.4×	413 1.2×	144 1.0×	90 1.1×	55 0.9×	21	516

Countries citing papers authored by P. Hesto

Since Specialization

Citations

This map shows the geographic impact of P. Hesto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Hesto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Hesto more than expected).

Fields of papers citing papers by P. Hesto

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Hesto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Hesto. The network helps show where P. Hesto may publish in the future.

Co-authorship network of co-authors of P. Hesto

This figure shows the co-authorship network connecting the top 25 collaborators of P. Hesto. A scholar is included among the top collaborators of P. Hesto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Hesto. P. Hesto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Lourtioz, Jean–Michel, et al.. (2015). Nanosciences and Nanotechnology. CERN Document Server (European Organization for Nuclear Research). 16 indexed citations

Lefèvre, R., M. F. Goffman, Vincent Derycke, et al.. (2005). Scaling Law in Carbon Nanotube Electromechanical Devices. Physical Review Letters. 95(18). 185504–185504. 29 indexed citations

Dollfus, Philippe, et al.. (2004). Electronic properties of semiconductor quantum dots for Coulomb blockade applications. Physica E Low-dimensional Systems and Nanostructures. 21(2-4). 496–500. 7 indexed citations

Cassan, Éric, S. Galdin, Philippe Dollfus, & P. Hesto. (2003). Modeling of direct tunneling gate current in ultra-thin gate oxide MOSFETs: a comparison between simulators. 115–118.

Dollfus, Philippe, et al.. (2002). Monte Carlo study of a self-aligned dual 50nm-gate InAlAs/InGaAs HEMT exhibiting high performances without short-channel effects. 469–472. 1 indexed citations

Cassan, Éric, Philippe Dollfus, S. Galdin, & P. Hesto. (2001). Semiclassical and wave mechanical modeling of charge control and direct tunneling leakage in MOS and H-MOS devices with ultra-thin oxides. IEEE Transactions on Electron Devices. 48(4). 715–721. 11 indexed citations

Dollfus, Philippe, S. Galdin, P. Hesto, & H. J. Osten. (2001). Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures. Journal of Materials Science Materials in Electronics. 12(4-6). 245–248. 2 indexed citations

Bournel, Arnaud, et al.. (2001). Theoretical and experimental considerations on the spin field effect transistor. Physica E Low-dimensional Systems and Nanostructures. 10(1-3). 86–90. 14 indexed citations

Cassan, Éric, S. Galdin, Philippe Dollfus, & P. Hesto. (2000). Comparison between Device Simulators for Gate Current Calculation in Ultra-Thin Gate Oxide n-MOSFETs. IEICE Transactions on Electronics. 83(8). 1194–1202. 1 indexed citations

10.

Bournel, Arnaud, et al.. (2000). Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells. Applied Physics Letters. 77(15). 2346–2348. 19 indexed citations

11.

Galdin, S., Philippe Dollfus, V. Aubry-Fortuna, P. Hesto, & H. J. Osten. (2000). Band offset predictions for strained group IV alloys: Si_1-x-yGe_xC_yon Si(001) and Si_1-xGe_xon Si_1-zGe_z(001). Semiconductor Science and Technology. 15(6). 565–572. 34 indexed citations

12.

Galdin, S., et al.. (1999). Accurate analytical delay expression for short channel CMOS SOI inverter using Monte Carlo simulation. Solid-State Electronics. 43(10). 1869–1877.

13.

Galdin, S., et al.. (1999). Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si_1−yC_y(y ≤ 0.03). The European Physical Journal Applied Physics. 7(1). 73–77. 7 indexed citations

14.

Hesto, P., et al.. (1998). Resonance Method: An Attractive Way to Evaluate Mechanical Properties of Thin Gold Films. MRS Proceedings. 518. 1 indexed citations

15.

Dollfus, Philippe, et al.. (1996). Operation of SiGe channel heterojunction p-MOSFET. Applied Surface Science. 102. 259–262. 1 indexed citations

16.

Galdin, S., Philippe Dollfus, & P. Hesto. (1994). Static and dynamic behavior of a Si/Si0.8Ge0.2/Si heterojunction bipolar transistor using Monte Carlo simulation. Journal of Applied Physics. 75(6). 2963–2969. 6 indexed citations

17.

Hesto, P., et al.. (1993). Monte Carlo study of a 50 nm-dual-gate HEMT providing against short-channel effects. Solid-State Electronics. 36(5). 711–715. 14 indexed citations

18.

Galdin, S., et al.. (1992). Monte-Carlo study of the nonstationary transport in Si-SiGe HJBTs. Semiconductor Science and Technology. 7(3B). B540–B542. 5 indexed citations

19.

Pélouard, Jean-Luc, et al.. (1986). Double-heterojunction GaAlInAs/GaInAs bipolar transistor grown by molecular beam epitaxy. IEEE Electron Device Letters. 7(9). 516–518. 15 indexed citations

20.

Hesto, P.. (1978). Tunnelling effect through a thin insulating metal-insulator-metal structure. Thin Solid Films. 51(1). 23–32. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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