Maxime Legallais

496 total citations
23 papers, 350 citations indexed

About

Maxime Legallais is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Maxime Legallais has authored 23 papers receiving a total of 350 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 17 papers in Biomedical Engineering and 4 papers in Materials Chemistry. Recurrent topics in Maxime Legallais's work include Nanowire Synthesis and Applications (14 papers), Semiconductor materials and devices (12 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). Maxime Legallais is often cited by papers focused on Nanowire Synthesis and Applications (14 papers), Semiconductor materials and devices (12 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). Maxime Legallais collaborates with scholars based in France, United States and Sweden. Maxime Legallais's co-authors include Céline Ternon, B. Salem, Frédéric Le Cras, Hervé Roussel, David Riassetto, M. Langlet, Isidora Cekić-Lasković, Diddo Diddens, Anand Narayanan Krishnamoorthy and Christian Wölke and has published in prestigious journals such as Journal of Applied Physics, Advanced Energy Materials and ACS Applied Materials & Interfaces.

In The Last Decade

Maxime Legallais

23 papers receiving 342 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Maxime Legallais France 11 244 159 149 44 39 23 350
Alejandro Alvarez Barragan United States 8 238 1.0× 174 1.1× 60 0.4× 159 3.6× 15 0.4× 8 386
Peng Xiang China 10 151 0.6× 85 0.5× 61 0.4× 84 1.9× 61 1.6× 30 337
Eissa Al-Nasrallah Kuwait 5 99 0.4× 241 1.5× 135 0.9× 58 1.3× 10 0.3× 5 334
Xingyu Wang China 9 279 1.1× 305 1.9× 37 0.2× 59 1.3× 26 0.7× 30 404
Beining Zheng China 9 239 1.0× 306 1.9× 67 0.4× 63 1.4× 20 0.5× 20 424
Bo Yin China 9 116 0.5× 235 1.5× 41 0.3× 19 0.4× 12 0.3× 19 345
Joshua W. Hill United States 11 167 0.7× 140 0.9× 33 0.2× 69 1.6× 12 0.3× 14 385
Yanhan Yang China 10 416 1.7× 484 3.0× 94 0.6× 56 1.3× 10 0.3× 27 667
Nitin M. Batra Saudi Arabia 10 165 0.7× 178 1.1× 99 0.7× 91 2.1× 31 0.8× 21 367
Ken‐Ming Yin Taiwan 12 319 1.3× 188 1.2× 67 0.4× 43 1.0× 4 0.1× 24 424

Countries citing papers authored by Maxime Legallais

Since Specialization
Citations

This map shows the geographic impact of Maxime Legallais's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Maxime Legallais with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Maxime Legallais more than expected).

Fields of papers citing papers by Maxime Legallais

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Maxime Legallais. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Maxime Legallais. The network helps show where Maxime Legallais may publish in the future.

Co-authorship network of co-authors of Maxime Legallais

This figure shows the co-authorship network connecting the top 25 collaborators of Maxime Legallais. A scholar is included among the top collaborators of Maxime Legallais based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Maxime Legallais. Maxime Legallais is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tison, Yann, et al.. (2025). Stability of LiF Deposited by ALD on High-Voltage Spinel/Polyimide Composite Electrodes. ACS Applied Energy Materials. 8(6). 3392–3403. 2 indexed citations
2.
Legallais, Maxime, et al.. (2024). High‐Throughput Experimentation Unveils Composition – Structure – Conductivity Relationships in the Extended LiPON System. Advanced Energy Materials. 14(36). 3 indexed citations
3.
Legallais, Maxime, et al.. (2022). Functional Devices from Bottom-Up Silicon Nanowires: A Review. Nanomaterials. 12(7). 1043–1043. 32 indexed citations
4.
Legallais, Maxime, P. Besson, Laura Vauche, et al.. (2021). H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces. Applied Surface Science. 582. 152309–152309. 20 indexed citations
5.
Benayad, Anass, Diddo Diddens, Andreas Heuer, et al.. (2021). High‐Throughput Experimentation and Computational Freeway Lanes for Accelerated Battery Electrolyte and Interface Development Research. Advanced Energy Materials. 12(17). 85 indexed citations
6.
Legallais, Maxime, F. Bassani, T. Baron, et al.. (2021). Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors. Advanced Materials Interfaces. 9(5). 3 indexed citations
7.
Legallais, Maxime, Sylvain David, F. Bassani, et al.. (2020). Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing. ACS Applied Materials & Interfaces. 12(35). 39870–39880. 27 indexed citations
8.
Legallais, Maxime, et al.. (2020). Development of a robust fabrication process for single silicon nanowire-based omega gate transistors on polyamide substrate. Semiconductor Science and Technology. 36(2). 25003–25003. 4 indexed citations
9.
Legallais, Maxime, Per‐Erik Hellström, Mireille Mouis, et al.. (2019). Wafer-scale HfO2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment. Nanotechnology. 30(18). 184002–184002. 10 indexed citations
10.
Legallais, Maxime, et al.. (2019). DNA grafting on silicon nanonets using an eco-friendly functionalization process based on epoxy silane. Materials Today Proceedings. 6. 333–339. 4 indexed citations
11.
Legallais, Maxime, et al.. (2019). Material engineering of percolating silicon nanowire networks for reliable and efficient electronic devices. Materials Chemistry and Physics. 238. 121871–121871. 11 indexed citations
12.
Mouis, M., et al.. (2019). Analysis of the role of inter-nanowire junctions on current percolation effects in silicon nanonet field-effect transistors. Solid-State Electronics. 168. 107725–107725. 4 indexed citations
13.
Legallais, Maxime, Việt Hương Nguyễn, Mireille Mouis, et al.. (2019). Monolithic fabrication of nano-to-millimeter scale integrated transistors based on transparent and flexible silicon nanonets. Nano Futures. 3(2). 25002–25002. 7 indexed citations
14.
Legallais, Maxime, et al.. (2017). Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion. Solid-State Electronics. 143. 83–89. 5 indexed citations
15.
Bano, Edwige, Laëtitia Rapenne, B. Pelissier, et al.. (2017). Chemical Stability of Si-SiC Nanostructures under Physiological Conditions. Materials science forum. 897. 638–641. 10 indexed citations
16.
Legallais, Maxime, Sébastien Fourcade, U‐Chan Chung, et al.. (2017). Fast re-oxidation kinetics and conduction pathway in Spark Plasma Sintered ferroelectric ceramics. Journal of the European Ceramic Society. 38(2). 543–550. 20 indexed citations
17.
Legallais, Maxime, M. Mouis, B. Salem, et al.. (2017). An innovative large scale integration of silicon nanowire-based field effect transistors. Solid-State Electronics. 143. 97–102. 17 indexed citations
18.
Ternon, Céline, et al.. (2017). Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires. Applied Surface Science. 410. 423–431. 51 indexed citations
19.
Ternon, Céline, Jean‐Marie Lebrun, Maxime Legallais, et al.. (2015). Silicon Nanowires: Low Temperature Processing to Form Oxidation Insensitive Electrical Contact at Silicon Nanowire/Nanowire Junctions (Adv. Electron. Mater. 10/2015). Advanced Electronic Materials. 1(10). 5 indexed citations
20.
Ternon, Céline, Jean‐Marie Lebrun, Maxime Legallais, et al.. (2015). Low Temperature Processing to Form Oxidation Insensitive Electrical Contact at Silicon Nanowire/Nanowire Junctions. Advanced Electronic Materials. 1(10). 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Alejandro Alvarez Barragan Breakdown of academic impact, for papers by Peng Xiang Breakdown of academic impact, for papers by Eissa Al-Nasrallah Breakdown of academic impact, for papers by Xingyu Wang Breakdown of academic impact, for papers by Beining Zheng Breakdown of academic impact, for papers by Bo Yin Breakdown of academic impact, for papers by Joshua W. Hill Breakdown of academic impact, for papers by Yanhan Yang Breakdown of academic impact, for papers by Nitin M. Batra Breakdown of academic impact, for papers by Ken‐Ming Yin
Rankless by CCL
2026