Maxime Legallais

496 citations

23 papers · 350 indexed · h-index 11

Electrical and Electronic Engineering
- Semiconductor materials and devices 12
- Advancements in Semiconductor Devices and Circuit Design 11
- Advanced Battery Materials and Technologies 2
Materials Chemistry
Biomedical Engineering
- Nanowire Synthesis and Applications 14
Condensed Matter Physics
- GaN-based semiconductor devices and materials 3
Automotive Engineering
Mechanics of Materials
- Laser-induced spectroscopy and plasma 2
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 2
Atomic and Molecular Physics, and Optics
- Mechanical and Optical Resonators 2

Co-authors: Céline Ternon B. Salem Frédéric Le Cras Hervé Roussel David Riassetto M. Langlet Isidora Cekić-Lasković Diddo Diddens
Cited by: Electrical and Electronic Engineering Materials Chemistry Biomedical Engineering
Journals: Journal of Applied Physics (1 paper)Advanced Energy Materials (2 papers)ACS Applied Materials & Interfaces (1 paper)
Partner nations: France United States Sweden

In The Last Decade

Maxime Legallais

23 papers receiving 342 citations

Peers

Countries citing papers authored by Maxime Legallais

Since Specialization

Citations

This map shows the geographic impact of Maxime Legallais's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Maxime Legallais with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Maxime Legallais more than expected).

Fields of papers citing papers by Maxime Legallais

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Maxime Legallais. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Maxime Legallais. The network helps show where Maxime Legallais may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Maxime Legallais, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Maxime Legallais Line = papers co-authored together Maxime Legallais links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Stability of LiF Deposited by ALD on High-Voltage Spinel/Polyimide Composite Electrodes ACS Applied Energy Materials ·Matthias Audren-Paul,Yann Tison,Hervé Martínez,David Peralta,Gunay Yildirim,Frédéric Le Cras,Maxime Legallais	2025	2
2	High‐Throughput Experimentation Unveils Composition – Structure – Conductivity Relationships in the Extended LiPON System Advanced Energy Materials ·William Berthou,Maxime Legallais,S. Sorieul,Gunay Yildirim,Bruno Bousquet,Vincent Motto‐Ros,Frédéric Le Cras	2024	3
3	Functional Devices from Bottom-Up Silicon Nanowires: A Review Nanomaterials ·Tabassom Arjmand,Maxime Legallais,Thi Thu Thuy Nguyen,Pauline Serre,Monica Vallejo-Perez,Fanny Morisot,B. Salem,Céline Ternon	2022	32
4	H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces Applied Surface Science ·Sabria Benrabah,Maxime Legallais,P. Besson,Simon Ruel,Laura Vauche,Bernard Pélissier,Chloé Thieuleux,B. Salem,Matthew Charles	2021	20
5	High‐Throughput Experimentation and Computational Freeway Lanes for Accelerated Battery Electrolyte and Interface Development Research Advanced Energy Materials ·Anass Benayad,Diddo Diddens,Andreas Heuer,Anand Narayanan Krishnamoorthy,M. Maiti,Frédéric Le Cras,Maxime Legallais,Fuzhan Rahmanian,Yuyoung Shin,Helge S. Stein,Martin Winter,Christian Wölke,Peng Yan,Isidora Cekić-Lasković	2021	85
6	Impact of Substrate Biasing During AlN Growth by PEALD on Al₂O₃/AlN/GaN MOS Capacitors Advanced Materials Interfaces ·Maxime Legallais,Gauthier Lefèvre,Simon Martin,S. Labau,F. Bassani,Bernard Pélissier,T. Baron,Laura Vauche,C. Le Royer,Matthew Charles,W. Vandendaele,M. Plissonnier,R. Gwoziecki,B. Salem	2021	3
7	Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing ACS Applied Materials & Interfaces ·Maxime Legallais,H. Mehdi,Sylvain David,F. Bassani,S. Labau,Bernard Pélissier,T. Baron,E. Martínez,G. Ghibaudo,B. Salem	2020	27
8	Development of a robust fabrication process for single silicon nanowire-based omega gate transistors on polyamide substrate Semiconductor Science and Technology ·Tabassom Arjmand,Maxime Legallais,T. Haffner,M. Bawedin,Céline Ternon,B. Salem	2020	4
9	Wafer-scale HfO₂ encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment Nanotechnology ·Ganesh Jayakumar,Maxime Legallais,Per‐Erik Hellström,Mireille Mouis,Isabelle Pignot‐Paintrand,Valérie Stambouli,Céline Ternon,Mikael Östling	2019	10
10	DNA grafting on silicon nanonets using an eco-friendly functionalization process based on epoxy silane Materials Today Proceedings ·Thomas Demes,Fanny Morisot,Maxime Legallais,Adrien Calais,Etienne Pernot,Isabelle Pignot‐Paintrand,Céline Ternon,Valérie Stambouli	2019	4
11	Material engineering of percolating silicon nanowire networks for reliable and efficient electronic devices Materials Chemistry and Physics ·Maxime Legallais,Thi Thu Thuy Nguyen,Thibauld Cazimajou,Mireille Mouis,B. Salem,Céline Ternon	2019	11
12	Analysis of the role of inter-nanowire junctions on current percolation effects in silicon nanonet field-effect transistors Solid-State Electronics ·Thibauld Cazimajou,M. Mouis,Maxime Legallais,T. T. T. Nguyên,Céline Ternon,B. Salem,Gérard Ghibaudo	2019	4
13	Monolithic fabrication of nano-to-millimeter scale integrated transistors based on transparent and flexible silicon nanonets Nano Futures ·Thi Thu Thuy Nguyen,Thibauld Cazimajou,Maxime Legallais,Tabassom Arjmand,Việt Hương Nguyễn,Mireille Mouis,B. Salem,Éric Robin,Céline Ternon	2019	7
14	Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion Solid-State Electronics ·Thibauld Cazimajou,Maxime Legallais,M. Mouis,Céline Ternon,B. Salem,G. Ghibaudo	2017	5
15	Chemical Stability of Si-SiC Nanostructures under Physiological Conditions Materials science forum ·Romain Bange,Edwige Bano,Laëtitia Rapenne,S. Labau,B. Pelissier,Maxime Legallais,B. Salem,Valérie Stambouli	2017	10
16	Fast re-oxidation kinetics and conduction pathway in Spark Plasma Sintered ferroelectric ceramics Journal of the European Ceramic Society ·Maxime Legallais,Sébastien Fourcade,U‐Chan Chung,Dominique Michau,Mario Maglione,Fabrice Mauvy,Catherine Elissalde	2017	20
17	An innovative large scale integration of silicon nanowire-based field effect transistors Solid-State Electronics ·Maxime Legallais,T. T. T. Nguyên,M. Mouis,B. Salem,Éric Robin,Pascale Chenevier,Céline Ternon	2017	17
18	Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires Applied Surface Science ·Thomas Demes,Céline Ternon,Fanny Morisot,David Riassetto,Maxime Legallais,Hervé Roussel,M. Langlet	2017	51
19	Silicon Nanowires: Low Temperature Processing to Form Oxidation Insensitive Electrical Contact at Silicon Nanowire/Nanowire Junctions (Adv. Electron. Mater. 10/2015) Advanced Electronic Materials ·Céline Ternon,Pauline Serre,Jean‐Marie Lebrun,V. Brouzet,Maxime Legallais,Sylvain David,Thierry Luciani,C. Pascal,T. Baron,Jean‐Michel Missiaen	2015	5
20	Low Temperature Processing to Form Oxidation Insensitive Electrical Contact at Silicon Nanowire/Nanowire Junctions Advanced Electronic Materials ·Céline Ternon,Pauline Serre,Jean‐Marie Lebrun,V. Brouzet,Maxime Legallais,Sylvain David,Thierry Luciani,C. Pascal,T. Baron,Jean‐Michel Missiaen	2015	16

About Maxime Legallais

Maxime Legallais is a scholar working on Biomedical Engineering, Electrical and Electronic Engineering and Condensed Matter Physics, having authored 23 papers that have together received 350 indexed citations. Recurring topics across this work include Nanowire Synthesis and Applications (14 papers), Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), GaN-based semiconductor devices and materials (3 papers), Laser-induced spectroscopy and plasma (2 papers), Advanced Battery Materials and Technologies (2 papers), Ga2O3 and related materials (2 papers) and Mechanical and Optical Resonators (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (244 citations), Materials Chemistry (159 citations) and Biomedical Engineering (149 citations). Maxime Legallais has collaborated with scholars based in France, United States and Sweden. Frequent co-authors include Céline Ternon, B. Salem, Frédéric Le Cras, Hervé Roussel, David Riassetto, M. Langlet, Isidora Cekić-Lasković, Diddo Diddens, Anand Narayanan Krishnamoorthy and Christian Wölke. Their work appears in journals such as Journal of Applied Physics, Advanced Energy Materials and ACS Applied Materials & Interfaces.

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