Taketoshi Tanaka

517 total citations
17 papers, 427 citations indexed

About

Taketoshi Tanaka is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Taketoshi Tanaka has authored 17 papers receiving a total of 427 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Condensed Matter Physics, 8 papers in Electrical and Electronic Engineering and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Taketoshi Tanaka's work include GaN-based semiconductor devices and materials (14 papers), Semiconductor materials and devices (6 papers) and Semiconductor Quantum Structures and Devices (5 papers). Taketoshi Tanaka is often cited by papers focused on GaN-based semiconductor devices and materials (14 papers), Semiconductor materials and devices (6 papers) and Semiconductor Quantum Structures and Devices (5 papers). Taketoshi Tanaka collaborates with scholars based in Japan and Germany. Taketoshi Tanaka's co-authors include Masashi Kubota, Kuniyoshi Okamoto, Hiroaki Ohta, Hironori Okumura, Ken Nakahara, M. Ishida, Tetsuzo Ueda, Masayuki Kuroda, Akira Uedono and Minoru Akutsu and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

Taketoshi Tanaka

17 papers receiving 406 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Taketoshi Tanaka Japan 8 357 225 165 154 126 17 427
Christian Hauswald Germany 14 370 1.0× 126 0.6× 227 1.4× 280 1.8× 140 1.1× 21 509
Chinkyo Kim South Korea 10 271 0.8× 89 0.4× 152 0.9× 255 1.7× 120 1.0× 49 408
B. Monemar Sweden 10 385 1.1× 172 0.8× 220 1.3× 249 1.6× 154 1.2× 27 494
Shih-Wei Feng Taiwan 10 372 1.0× 187 0.8× 161 1.0× 224 1.5× 105 0.8× 15 446
Pavel Aseev Spain 11 258 0.7× 196 0.9× 141 0.9× 243 1.6× 198 1.6× 16 499
Moritz Brendel Germany 13 283 0.8× 121 0.5× 208 1.3× 158 1.0× 155 1.2× 25 405
Shuichi Kubo Japan 5 387 1.1× 101 0.4× 236 1.4× 208 1.4× 156 1.2× 9 422
Ching-Hsueh Chiu Taiwan 13 366 1.0× 163 0.7× 220 1.3× 234 1.5× 146 1.2× 35 478

Countries citing papers authored by Taketoshi Tanaka

Since Specialization
Citations

This map shows the geographic impact of Taketoshi Tanaka's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Taketoshi Tanaka with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Taketoshi Tanaka more than expected).

Fields of papers citing papers by Taketoshi Tanaka

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Taketoshi Tanaka. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Taketoshi Tanaka. The network helps show where Taketoshi Tanaka may publish in the future.

Co-authorship network of co-authors of Taketoshi Tanaka

This figure shows the co-authorship network connecting the top 25 collaborators of Taketoshi Tanaka. A scholar is included among the top collaborators of Taketoshi Tanaka based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Taketoshi Tanaka. Taketoshi Tanaka is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Tanaka, Taketoshi, et al.. (2023). Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs. Applied Physics Express. 16(7). 75003–75003. 1 indexed citations
2.
Tanaka, Taketoshi, et al.. (2023). Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance. IEEE Transactions on Electron Devices. 70(9). 4743–4748. 3 indexed citations
3.
Tanaka, Taketoshi, et al.. (2021). Zn-Doped GaN Comprising the Gate Structure of Normally Off AlGaN/GaN-HFETs. IEEE Electron Device Letters. 43(2). 192–195. 2 indexed citations
4.
5.
Okumura, Hironori & Taketoshi Tanaka. (2019). Dry and wet etching for β-Ga2O3 Schottky barrier diodes with mesa termination. Japanese Journal of Applied Physics. 58(12). 120902–120902. 50 indexed citations
6.
Tanaka, Taketoshi, et al.. (2019). Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si. IEICE Transactions on Electronics. E103.C(4). 186–190. 1 indexed citations
7.
Uedono, Akira, Taketoshi Tanaka, Ken Nakahara, et al.. (2018). (Invited) Vacancy-Type Defects and Their Carrier Trapping Properties in GaN Studied by Monoenergetic Positron Beams. ECS Transactions. 86(10). 149–160. 1 indexed citations
8.
Uedono, Akira, Taketoshi Tanaka, Ken Nakahara, et al.. (2017). Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams. Thin Solid Films. 639. 78–83. 12 indexed citations
9.
Tanaka, Taketoshi, et al.. (2017). Extraction of net acceptor type trap density in semi-insulating GaN layers grown on Si substrate by DC I-V measurement. physica status solidi (a). 214(8). 1600925–1600925. 6 indexed citations
10.
11.
Ishida, M., Masayuki Kuroda, Tetsuzo Ueda, & Taketoshi Tanaka. (2012). Nonpolar AlGaN/GaN HFETs with a normally off operation. Semiconductor Science and Technology. 27(2). 24019–24019. 11 indexed citations
12.
Okamoto, Kuniyoshi, et al.. (2009). Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm. Applied Physics Letters. 94(7). 127 indexed citations
13.
Kubota, Masashi, Kuniyoshi Okamoto, Taketoshi Tanaka, & Hiroaki Ohta. (2008). Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes. Applied Physics Letters. 92(1). 67 indexed citations
14.
Okamoto, Kuniyoshi, Taketoshi Tanaka, & Masashi Kubota. (2008). High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolarm-Plane Gallium Nitride. Applied Physics Express. 1. 72201–72201. 41 indexed citations
15.
Kubota, Masashi, Kuniyoshi Okamoto, Taketoshi Tanaka, & Hiroaki Ohta. (2007). Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolarm-Plane Gallium Nitride. Applied Physics Express. 1(1). 11102–11102. 51 indexed citations
16.
Okamoto, Kuniyoshi, Taketoshi Tanaka, Masashi Kubota, & Hiroaki Ohta. (2007). Pure Blue Laser Diodes Based on Nonpolar m-Plane Gallium Nitride with InGaN Waveguiding Layers. Japanese Journal of Applied Physics. 46(9L). L820–L820. 46 indexed citations
17.
Hikita, Masahiro, H. Ishida, Yutaka Hirose, et al.. (2004). Reduction of ohmic contact resistance of AlGaN/GaN HFETs by doping of thermally diffused Si. 47–48. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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