John Robertson

97.6k total citations · 22 hit papers
822 papers, 80.5k citations indexed

About

John Robertson is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, John Robertson has authored 822 papers receiving a total of 80.5k indexed citations (citations by other indexed papers that have themselves been cited), including 653 papers in Materials Chemistry, 423 papers in Electrical and Electronic Engineering and 139 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in John Robertson's work include Diamond and Carbon-based Materials Research (240 papers), Semiconductor materials and devices (230 papers) and Carbon Nanotubes in Composites (201 papers). John Robertson is often cited by papers focused on Diamond and Carbon-based Materials Research (240 papers), Semiconductor materials and devices (230 papers) and Carbon Nanotubes in Composites (201 papers). John Robertson collaborates with scholars based in United Kingdom, China and United States. John Robertson's co-authors include Andrea C. Ferrari, Stewart J. Clark, Yuzheng Guo, Stephan Hofmann, Cinzia Casiraghi, W. I. Milne, Caterina Ducati, P. W. Peacock, K. Xiong and Sandra E. Rodil and has published in prestigious journals such as Nature, Science and Journal of the American Chemical Society.

In The Last Decade

John Robertson

814 papers receiving 78.5k citations

Hit Papers

Interpretation of Raman spectra of disordered and amorph... 1986 2026 1999 2012 2000 2002 2001 2004 2000 4.0k 8.0k 12.0k
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Interpretation of Raman spectra of disordered and amorphous carbon
    2000 13.0k citations John Robertson et al. profile →
  2. Diamond-like amorphous carbon
    2002 5.1k citations John Robertson profile →
  3. Resonant Raman spectroscopy of disordered, amorphous, and diamondlike carbon
    2001 2.5k citations John Robertson et al. profile →
  4. Raman spectroscopy of amorphous, nanostructured, diamond–like carbon, and nanodiamond
    2004 2.2k citations John Robertson et al. profile →
  5. Band offsets of wide-band-gap oxides and implications for future electronic devices
    2000 1.7k citations John Robertson profile →
  6. High dielectric constant oxides
    2004 1.4k citations John Robertson profile →
  7. High dielectric constant gate oxides for metal oxide Si transistors
    2005 1.4k citations John Robertson profile →
  8. Amorphous carbon
    1986 1.2k citations John Robertson profile →
  9. Raman spectroscopy of hydrogenated amorphous carbons
    2005 1.1k citations John Robertson et al. profile →
  10. Origin of the1150−cm−1Raman mode in nanocrystalline diamond
    2001 1.1k citations John Robertson et al. profile →
  11. Resonant bonding in crystalline phase-change materials
    2008 925 citations John Robertson et al. profile →
  12. Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition
    2001 870 citations M. Chhowalla, John Robertson et al. Journal of Applied Physics profile →
  13. Properties of filtered-ion-beam-deposited diamondlike carbon as a function of ion energy
    1993 768 citations John Robertson, G.A.J. Amaratunga et al. profile →
  14. Kohn Anomalies and Electron-Phonon Interactions in Graphite
    2004 718 citations John Robertson et al. profile →
  15. Hard amorphous (diamond-like) carbons
    1991 692 citations John Robertson profile →
  16. Interpretation of infrared and Raman spectra of amorphous carbon nitrides
    2003 677 citations John Robertson et al. profile →
  17. Properties of diamond-like carbon
    1992 635 citations John Robertson profile →
  18. In situ Observations of Catalyst Dynamics during Surface-Bound Carbon Nanotube Nucleation
    2007 607 citations John Robertson et al. profile →
  19. Band offsets of high K gate oxides on III-V semiconductors
    2006 594 citations John Robertson et al. Journal of Applied Physics profile →
  20. High-K materials and metal gates for CMOS applications
    2014 583 citations John Robertson et al. profile →
  21. Deposition mechanisms for promoting sp3 bonding in diamond-like carbon
    1993 453 citations John Robertson profile →
  22. Defect energy levels in HfO2 high-dielectric-constant gate oxide
    2005 420 citations John Robertson, Stewart J. Clark et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
John Robertson United Kingdom 119 62.1k 33.7k 18.3k 9.9k 9.4k 822 80.5k
Andrea C. Ferrari United Kingdom 102 79.3k 1.3× 44.5k 1.3× 9.2k 0.5× 31.1k 3.1× 18.6k 2.0× 372 110.8k
Marvin L. Cohen United States 132 61.9k 1.0× 24.3k 0.7× 7.7k 0.4× 6.8k 0.7× 10.0k 1.1× 794 86.7k
Gang Chen United States 141 59.0k 0.9× 23.2k 0.7× 4.0k 0.2× 9.7k 1.0× 9.7k 1.0× 1.1k 83.1k
Lars Hultman Sweden 106 53.4k 0.9× 24.2k 0.7× 22.0k 1.2× 9.0k 0.9× 8.5k 0.9× 814 67.3k
J. Furthmüller Germany 55 122.8k 2.0× 59.5k 1.8× 6.6k 0.4× 12.2k 1.2× 30.0k 3.2× 182 175.2k
Sumio Iijima Japan 99 69.8k 1.1× 21.6k 0.6× 3.5k 0.2× 23.1k 2.3× 10.2k 1.1× 597 89.6k
J. Häfner Austria 66 57.8k 0.9× 24.1k 0.7× 3.3k 0.2× 6.1k 0.6× 13.2k 1.4× 415 86.3k
M. S. Dresselhaus United States 153 111.2k 1.8× 41.8k 1.2× 3.1k 0.2× 25.7k 2.6× 18.3k 1.9× 957 137.2k
Alex Zunger United States 131 57.0k 0.9× 40.1k 1.2× 3.0k 0.2× 6.5k 0.7× 13.7k 1.4× 740 86.0k
Peter E. Blöchl Germany 41 59.5k 1.0× 29.1k 0.9× 3.3k 0.2× 5.2k 0.5× 15.7k 1.7× 95 87.5k

Countries citing papers authored by John Robertson

Since Specialization
Citations

This map shows the geographic impact of John Robertson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John Robertson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John Robertson more than expected).

Fields of papers citing papers by John Robertson

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John Robertson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John Robertson. The network helps show where John Robertson may publish in the future.

Co-authorship network of co-authors of John Robertson

This figure shows the co-authorship network connecting the top 25 collaborators of John Robertson. A scholar is included among the top collaborators of John Robertson based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with John Robertson. John Robertson is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yu, Wei, Kelvin H. L. Zhang, Feng Zhang, et al.. (2025). Polarization-engineered electron transport in β -Ga2O3/SiC heterojunctions: Atomic-scale modulation via SiC polymorphic selection. Applied Physics Letters. 127(21).
2.
Cui, Xiaxia, et al.. (2025). Band Alignment and Interfacial Stability of Co3O4 vs NiO as a Hole Transport Layer with FA0.4MA0.6PbI3 Perovskite. ACS Applied Materials & Interfaces. 17(16). 24494–24501. 2 indexed citations
3.
Yu, Wei, Guoyou Liu, John Robertson, et al.. (2025). Theoretical Study on the Interface and Transport Properties of Ti₃AuC₂ MAX Phase/4H-SiC Heterostructures for High-Temperature Power Device Applications. IEEE Transactions on Electron Devices. 72(7). 3750–3757.
4.
Guo, Yuzheng, et al.. (2025). Insights into the Co/MoS2/Co magnetic tunnel junctions. Applied Physics Reviews. 12(3).
5.
Yu, Wei, Xuhao Wan, Junjie Shi, et al.. (2025). Metal contacts and Schottky barriers at β-Ga2O3 interfaces: High-throughput-assisted first-principles calculations. Journal of Applied Physics. 137(11). 3 indexed citations
6.
Cao, Ruyue, Lei Yan, Kaike Yang, et al.. (2024). Dynamical Symmetry-Reduction-Induced Giant Anharmonicity in IV–VI Compounds: Role of Cation Lone-Pair s Electrons. The Journal of Physical Chemistry Letters. 15(27). 7055–7060. 2 indexed citations
7.
Robertson, John, Hiroshi Naganuma, & Haichang Lu. (2023). Comparing h-BN and MgO tunnel barriers for scaled magnetic tunnel junctions. Japanese Journal of Applied Physics. 62(SC). SC0804–SC0804. 3 indexed citations
8.
Chen, Jiaqi, Zhaofu Zhang, Yuzheng Guo, & John Robertson. (2023). Revisiting the electronic and optical properties of SiO2 polymorphs by hybrid functional calculations. Journal of Applied Physics. 133(4). 12 indexed citations
9.
10.
Cao, Ruyue, Zhaofu Zhang, Yuzheng Guo, & John Robertson. (2023). Density functional analysis of oxide dipole layer voltage shifts in high κ/metal gate stacks. Journal of Applied Physics. 134(8). 4 indexed citations
11.
Yu, Wei, Hailing Guo, Xiaoming Zha, et al.. (2023). Theoretical Insights Into the Interface Properties of Hydrogen-Terminated and Oxidized Silicon-Terminated Diamond Field-Effect Transistors With h-BeO Gate Dielectric. IEEE Transactions on Electron Devices. 70(11). 5550–5556. 5 indexed citations
12.
Yin, Yiheng, Chen Shao, Hailing Guo, et al.. (2022). Negative Differential Resistance Effect in “Cold” Metal Heterostructure Diodes. IEEE Electron Device Letters. 43(3). 498–501. 13 indexed citations
13.
Chen, Jiaqi, Zhaofu Zhang, Yuzheng Guo, & John Robertson. (2022). Electronic properties of CaF2 bulk and interfaces. Journal of Applied Physics. 131(21). 18 indexed citations
14.
Lu, Haichang, John Robertson, & Hiroshi Naganuma. (2021). Comparison of hexagonal boron nitride and MgO tunnel barriers in Fe,Co magnetic tunnel junctions. Applied Physics Reviews. 8(3). 21 indexed citations
15.
Lu, Haichang, Stewart J. Clark, Yuzheng Guo, & John Robertson. (2021). The metal–insulator phase change in vanadium dioxide and its applications. Journal of Applied Physics. 129(24). 36 indexed citations
16.
Wang, Zongwei, Jian Kang, Guofang Zhong, et al.. (2020). Self-Selective Resistive Device With Hybrid Switching Mode for Passive Crossbar Memory Application. IEEE Electron Device Letters. 41(7). 1009–1012. 39 indexed citations
17.
Gillen, Roland, John Robertson, & Janina Maultzsch. (2014). Electronic properties of MoS2/h‐BN heterostructures: Impact of dopants and impurities. physica status solidi (b). 251(12). 2620–2625. 10 indexed citations
18.
Milne, W. I., K. B. K. Teo, M. Chhowalla, et al.. (2001). Carbon films for use as the electron source in a parallel e-beam lithography system. Cambridge University Engineering Department Publications Database. 3 indexed citations
19.
Scott, J. F., et al.. (1998). Electronic and microstructure characterization of strontium-bismuth tantalate (SBT) thin films. Scientific Repository (Petra Christian University). 4 indexed citations
20.
Phillipson, Nicholas, William W. Klein, William Lamont, et al.. (1993). Political Discourse in Early Modern Britain. Cambridge University Press eBooks. 85 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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