P. Lagger

493 citations

13 papers · 435 indexed · h-index 10

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 11
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 3
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices 12
- Advancements in Semiconductor Devices and Circuit Design 9
- Silicon Carbide Semiconductor Technologies 1
- Advanced Memory and Neural Computing 1
Atomic and Molecular Physics, and Optics
Materials Chemistry
- ZnO doping and properties 1
Mechanics of Materials
- Metal and Thin Film Mechanics 1

Co-authors: D. Pogány Clemens Ostermaier Gregor Pobegen Clément Fleury Ole Bethge G. Strasser Andreas Naumann L. Wilde
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters (2 papers)Microelectronics Reliability (2 papers)Journal of Applied Physics (1 paper)
Partner nations: Austria Germany France

In The Last Decade

P. Lagger

13 papers receiving 426 citations

Peers

Countries citing papers authored by P. Lagger

Since Specialization

Citations

This map shows the geographic impact of P. Lagger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Lagger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Lagger more than expected).

Fields of papers citing papers by P. Lagger

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Lagger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Lagger. The network helps show where P. Lagger may publish in the future.

Co-authorship network

The 22 scholars most cited alongside P. Lagger, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Lagger Line = papers co-authored together P. Lagger links everyone, so they are left out of the graph.

All Works

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13 of 13 papers shown

#	Work
1	Review of bias-temperature instabilities at the III-N/dielectric interface Microelectronics Reliability ·Clemens Ostermaier,P. Lagger,Tae-sung Jung,D. Pogány	2018	35
2	Dynamics of carrier transport via AlGaN barrier in AlGaN/GaN MIS-HEMTs Applied Physics Letters ·Clemens Ostermaier,P. Lagger,G. Prechtl,Alexander Grill,Tibor Grasser,D. Pogány	2017	9
3	Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states Journal of Applied Physics ·김재관,P. Lagger,Clément Fleury,Iyad Alayoub,Ole Bethge,Clemens Ostermaier,G. Strasser,D. Pogány	2015	44
4	Modification of "native" surface donor states in AlGaN/GaN MIS-HEMTs by fluorination: Perspective for defect engineering Tae-sung Jung,P. Lagger,G. Prechtl,Fermín Pérez Martínez,Rudolf Pietschnig,D. Pogány,Clemens Ostermaier	2015	10
5	Charge feedback mechanisms at forward threshold voltage stress in GaN/AlGaN HEMTs Alexander Grill,G. Rzepa,P. Lagger,Clemens Ostermaier,H. Ceric,Tibor Grasser	2015	3
6	Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters P. Lagger,정도상,M. Jaworski,Gregor Pobegen,Tae-sung Jung,S. Fiaella,Javid Mohamed,Edward Hogg,G. Prechtl,D. Pogány,Clemens Ostermaier	2015	2
7	Enhancement of V<inf>th</inf> drift for repetitive gate stress pulses due to charge feedback effect in GaN MIS-HEMTs P. Lagger,Clemens Ostermaier,D. Pogány	2014	10
8	Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress Applied Physics Letters ·P. Lagger,Fermín Pérez Martínez,Tae-sung Jung,Sergio Sotelo-Sosa,Kwi-Ok Lee,Andreas Naumann,Johannes Müller,L. Wilde,Jonas Sundqvist,D. Pogány,Clemens Ostermaier	2014	58
9	Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments IEEE Transactions on Electron Devices ·P. Lagger,Tae-sung Jung,D. Pogány,Clemens Ostermaier	2014	92
10	Very Fast Dynamics of Threshold Voltage Drifts in GaN-Based MIS-HEMTs IEEE Electron Device Letters ·P. Lagger,Микола Москалюк,Gregor Pobegen,D. Pogány,Clemens Ostermaier	2013	35
11	Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs P. Lagger,Clemens Ostermaier,Gregor Pobegen,D. Pogány	2012	119
12	Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure Microelectronics Reliability ·Clemens Ostermaier,P. Lagger,M. Alomari,Nishikida,David Maier,M. Kiełt,Xiaoqin Zhai,S.L. Delage,G. Strasser,D. Pogány,E. Kohn	2012	10
13	Inclusion of carrier-carrier-scattering into arbitrary-order spherical harmonics expansions of the Boltzmann transport equation Karl Rupp,P. Lagger,Tibor Grasser,Ansgar Jüngel	2012	8

About P. Lagger

P. Lagger is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Mechanics of Materials and Materials Chemistry, having authored 13 papers that have together received 435 indexed citations. Recurring topics across this work include Semiconductor materials and devices (12 papers), GaN-based semiconductor devices and materials (11 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers), Ga2O3 and related materials (3 papers), Silicon Carbide Semiconductor Technologies (1 paper), Metal and Thin Film Mechanics (1 paper), ZnO doping and properties (1 paper) and Advanced Memory and Neural Computing (1 paper). The work is most often cited by research in Condensed Matter Physics (394 citations), Electronic, Optical and Magnetic Materials (183 citations), Electrical and Electronic Engineering (387 citations), Atomic and Molecular Physics, and Optics (46 citations) and Materials Chemistry (55 citations). P. Lagger has collaborated with scholars based in Austria, Germany and France. Frequent co-authors include D. Pogány, Clemens Ostermaier, Gregor Pobegen, Clément Fleury, Ole Bethge, G. Strasser, Andreas Naumann, L. Wilde, Jonas Sundqvist and Johannes Müller. Their work appears in journals such as Applied Physics Letters, Microelectronics Reliability, Journal of Applied Physics, IEEE Electron Device Letters and IEEE Transactions on Electron Devices.

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