G. Prechtl

589 total citations
45 papers, 446 citations indexed

About

G. Prechtl is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, G. Prechtl has authored 45 papers receiving a total of 446 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 25 papers in Condensed Matter Physics and 21 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in G. Prechtl's work include GaN-based semiconductor devices and materials (21 papers), Semiconductor Quantum Structures and Devices (18 papers) and Semiconductor materials and devices (15 papers). G. Prechtl is often cited by papers focused on GaN-based semiconductor devices and materials (21 papers), Semiconductor Quantum Structures and Devices (18 papers) and Semiconductor materials and devices (15 papers). G. Prechtl collaborates with scholars based in Austria, Italy and Poland. G. Prechtl's co-authors include Enrico Zanoni, Matteo Meneghini, Luca Sayadi, Nicola Modolo, Sébastien Sicre, Sebastian Maćkowski, Carlo De Santi, G. Karczewski, Gaudenzio Meneghesso and J. Kossut and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Physical Review B.

In The Last Decade

G. Prechtl

45 papers receiving 436 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Prechtl Austria 12 327 257 197 175 91 45 446
Sreenidhi Turuvekere India 7 347 1.1× 384 1.5× 92 0.5× 79 0.5× 165 1.8× 15 429
Fabio Alessio Marino Italy 10 317 1.0× 319 1.2× 103 0.5× 53 0.3× 111 1.2× 22 394
Yadong Xu United States 10 264 0.8× 185 0.7× 439 2.2× 249 1.4× 184 2.0× 13 599
S.S. Park South Korea 10 217 0.7× 236 0.9× 120 0.6× 63 0.4× 101 1.1× 22 295
Hiroshi Idzuchi Japan 13 207 0.6× 182 0.7× 464 2.4× 262 1.5× 149 1.6× 26 605
V. Hills United Kingdom 5 116 0.4× 150 0.6× 254 1.3× 107 0.6× 133 1.5× 6 320
Luca Sayadi Austria 9 346 1.1× 404 1.6× 94 0.5× 57 0.3× 142 1.6× 15 421
Shutaro Karube Japan 9 138 0.4× 163 0.6× 350 1.8× 104 0.6× 189 2.1× 28 439
E. Tiraş Türkiye 12 197 0.6× 193 0.8× 276 1.4× 179 1.0× 79 0.9× 47 413
Kazuhide Sumiyoshi Japan 5 205 0.6× 322 1.3× 125 0.6× 72 0.4× 167 1.8× 10 342

Countries citing papers authored by G. Prechtl

Since Specialization
Citations

This map shows the geographic impact of G. Prechtl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Prechtl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Prechtl more than expected).

Fields of papers citing papers by G. Prechtl

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Prechtl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Prechtl. The network helps show where G. Prechtl may publish in the future.

Co-authorship network of co-authors of G. Prechtl

This figure shows the co-authorship network connecting the top 25 collaborators of G. Prechtl. A scholar is included among the top collaborators of G. Prechtl based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Prechtl. G. Prechtl is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Modolo, Nicola, Carlo De Santi, Luca Sayadi, et al.. (2023). On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTs. IEEE Transactions on Electron Devices. 71(3). 1646–1653. 2 indexed citations
2.
Modolo, Nicola, Carlo De Santi, Luca Sayadi, et al.. (2022). Trap-state mapping to model GaN transistors dynamic performance. Scientific Reports. 12(1). 1755–1755. 19 indexed citations
3.
Modolo, Nicola, Carlo De Santi, Luca Sayadi, et al.. (2021). A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs. IEEE Electron Device Letters. 42(5). 673–676. 37 indexed citations
4.
Modolo, Nicola, Carlo De Santi, Luca Sayadi, et al.. (2021). Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultrafast (10 V/Ns) On-Wafer Methodology. IEEE Journal of Emerging and Selected Topics in Power Electronics. 10(5). 5019–5026. 27 indexed citations
5.
Ostermaier, Clemens, et al.. (2021). Dynamics of hole injection from p-GaN drain of a hybrid drain embedded GIT. AIP Advances. 11(5). 4 indexed citations
6.
Modolo, Nicola, Luca Sayadi, Clemens Ostermaier, et al.. (2021). Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices. 68(10). 5003–5008. 16 indexed citations
7.
Modolo, Nicola, Carlo De Santi, Luca Sayadi, et al.. (2021). A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level. Research Padua Archive (University of Padua). 1–5. 3 indexed citations
8.
Modolo, Nicola, Carlo De Santi, Luca Sayadi, et al.. (2020). Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors. Semiconductor Science and Technology. 36(1). 14001–14001. 18 indexed citations
9.
Deutschmann, Bernd, Nicola Modolo, Matteo Meneghini, et al.. (2020). Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress. IEEE Transactions on Electron Devices. 67(11). 4602–4605. 51 indexed citations
10.
Meneghini, Matteo, Alessandro Barbato, Carlo De Santi, et al.. (2020). Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements. Applied Physics Express. 13(7). 74003–74003. 9 indexed citations
11.
Modolo, Nicola, Matteo Meneghini, Alessandro Barbato, et al.. (2020). A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects. Microelectronics Reliability. 114. 113830–113830. 10 indexed citations
12.
Ostermaier, Clemens, P. Lagger, G. Prechtl, et al.. (2017). Dynamics of carrier transport via AlGaN barrier in AlGaN/GaN MIS-HEMTs. Applied Physics Letters. 110(17). 9 indexed citations
13.
Curatola, G., S. Yuferev, G. Pozzovivo, et al.. (2014). GaN virtual prototyping: From traps modeling to system-level cascode optimization. 337–340. 7 indexed citations
14.
Maćkowski, Sebastian, G. Karczewski, J. Kossut, et al.. (2002). Optical properties of CdTe/ZnTe quantum dot superlattices. Physica E Low-dimensional Systems and Nanostructures. 12(1-4). 503–506. 6 indexed citations
15.
Lee, Sang‐Hoon, J. K. Furdyna, Małgorzata Dobrowolska, et al.. (2002). Growth and Optical Properties of Mn-Containing II-VI Quantum Dots. physica status solidi (b). 229(1). 469–472. 20 indexed citations
16.
Prechtl, G., et al.. (2001). Giant tunability of exciton photoluminescence emission in antiferromagnetic EuTe. Physical review. B, Condensed matter. 63(16). 22 indexed citations
17.
Maćkowski, Sebastian, G. Karczewski, T. Wójtowicz, et al.. (2001). Structural and optical evidence of island correlation in CdTe/ZnTe superlattices. Applied Physics Letters. 78(24). 3884–3886. 33 indexed citations
18.
Prechtl, G., Sebastian Maćkowski, A. Bonanni, et al.. (2000). Single antiferromagnetic MnTe (sub)monolayers in CdTe/CdMgTe quantum wells. Semiconductor Science and Technology. 15(6). 506–510. 5 indexed citations
19.
Prechtl, G., David Stifter, H. Sitter, et al.. (1999). Luminescence of ZnCdSe/ZnSe ridge quantum wires. Applied Physics Letters. 75(7). 974–976. 2 indexed citations
20.
Kozanecki, A., C. Jeynes, B.J. Sealy, et al.. (1998). Photoluminescence and Backscattering Characterization of 6H SiC Implanted with Erbium and Oxygen Ions. Materials science forum. 264-268. 501–504. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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