J. F. Klem

1.8k total citations
80 papers, 1.4k citations indexed

About

J. F. Klem is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, J. F. Klem has authored 80 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 66 papers in Atomic and Molecular Physics, and Optics, 65 papers in Electrical and Electronic Engineering and 9 papers in Materials Chemistry. Recurrent topics in J. F. Klem's work include Semiconductor Quantum Structures and Devices (57 papers), Semiconductor materials and devices (23 papers) and Advanced Semiconductor Detectors and Materials (21 papers). J. F. Klem is often cited by papers focused on Semiconductor Quantum Structures and Devices (57 papers), Semiconductor materials and devices (23 papers) and Advanced Semiconductor Detectors and Materials (21 papers). J. F. Klem collaborates with scholars based in United States, Canada and United Kingdom. J. F. Klem's co-authors include H. Morkoç̌, W. T. Masselink, C. K. Peng, A. Ketterson, O. Blum, T. Henderson, N. Ōtsuka, Y. E. Ihm, S. K. Lyo and J. Y. Tsao and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. F. Klem

78 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. F. Klem United States 22 1.1k 1.0k 266 172 136 80 1.4k
K. C. Hsieh United States 24 1.2k 1.0× 1.1k 1.1× 335 1.3× 217 1.3× 188 1.4× 84 1.5k
A. Y. Cho United States 13 800 0.7× 703 0.7× 190 0.7× 171 1.0× 101 0.7× 20 1000
D. E. Mars United States 21 1.2k 1.0× 1.2k 1.2× 259 1.0× 252 1.5× 92 0.7× 74 1.5k
G. H. Döhler Germany 15 729 0.6× 661 0.6× 266 1.0× 253 1.5× 115 0.8× 62 1.0k
K. Y. Cheng United States 23 1.3k 1.2× 1.3k 1.2× 448 1.7× 351 2.0× 227 1.7× 102 1.7k
D. T. McInturff United States 16 842 0.7× 772 0.8× 196 0.7× 207 1.2× 110 0.8× 42 1.0k
Isao Hino Japan 21 1.4k 1.2× 1.2k 1.2× 519 2.0× 223 1.3× 103 0.8× 40 1.6k
A. J. SpringThorpe Canada 19 785 0.7× 784 0.8× 259 1.0× 126 0.7× 78 0.6× 81 1.1k
C. J. Nuese United States 23 838 0.7× 982 1.0× 223 0.8× 135 0.8× 153 1.1× 57 1.2k
V. Swaminathan United States 20 969 0.8× 1.1k 1.1× 303 1.1× 118 0.7× 109 0.8× 87 1.3k

Countries citing papers authored by J. F. Klem

Since Specialization
Citations

This map shows the geographic impact of J. F. Klem's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. F. Klem with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. F. Klem more than expected).

Fields of papers citing papers by J. F. Klem

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. F. Klem. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. F. Klem. The network helps show where J. F. Klem may publish in the future.

Co-authorship network of co-authors of J. F. Klem

This figure shows the co-authorship network connecting the top 25 collaborators of J. F. Klem. A scholar is included among the top collaborators of J. F. Klem based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. F. Klem. J. F. Klem is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Breiland, W.G., A.A. Allerman, J. F. Klem, & Karen Elizabeth Waldrip. (2002). Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers. MRS Bulletin. 27(7). 520–524. 13 indexed citations
2.
Heller, Edwin J., et al.. (2002). Development of a GaAs-based monolithic surface acoustic wave integrated chemical microsensor. 233–236. 1 indexed citations
3.
4.
Kim, Yongmin, C. H. Perry, J. A. Simmons, & J. F. Klem. (2000). In-plane magnetophotoluminescence studies of modulation-doped GaAs/AlGaAs coupled double quantum wells. Applied Physics Letters. 77(3). 388–390. 4 indexed citations
5.
Allerman, Andrew A., D. J. Friedman, John F. Geisz, et al.. (1999). Next Generation Thin Films for Photovoltaics: InGaAsN. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations
6.
Klem, J. F., et al.. (1998). Application of in situ reflectance monitoring to molecular beam epitaxy of vertical-cavity structures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1498–1501. 1 indexed citations
7.
Blum, O., J. F. Klem, K.L. Lear, G.A. Vawter, & S. R. Kurtz. (1997). Optically pumped, monolithic, all-epitaxial 1.56µm vertical cavity surface emittinglaser using Sb-based reflectors. Electronics Letters. 33(22). 1878–1880. 21 indexed citations
8.
Blum, O., K.M. Geib, M. J. Hafich, J. F. Klem, & Carol I. H. Ashby. (1996). Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications. Applied Physics Letters. 68(22). 3129–3131. 29 indexed citations
9.
Harff, N.E., J. A. Simmons, J. F. Klem, et al.. (1996). Observation of magnetic breakdown in double quantum wells. Superlattices and Microstructures. 20(4). 595–600. 2 indexed citations
10.
Simmons, J. A., et al.. (1995). Magnetic focusing in parallel quantum point contacts. Physical review. B, Condensed matter. 52(15). 10756–10759. 4 indexed citations
11.
Blum, O., I. J. Fritz, L. R. Dawson, et al.. (1994). Molecular beam epitaxy grown AlAsSb/GaAsSb distributed Bragg reflector on InP substrate operating near 1.55 μm. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(2). 1122–1124. 6 indexed citations
12.
Захаров, Н. Д., et al.. (1993). Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates. Applied Physics Letters. 62(13). 1536–1538. 11 indexed citations
13.
Olbright, G. R., J. F. Klem, H. M. Gibbs, et al.. (1991). Nonlinear optical properties of type-II quantum wells. Physical review. B, Condensed matter. 44(7). 3043–3053. 18 indexed citations
14.
Binder, R., et al.. (1990). Many-body effects in the luminescence of highly excited indirect superlattices. Journal of the Optical Society of America B. 7(8). 1473–1473. 16 indexed citations
15.
Alterovitz, Samuel A., et al.. (1988). Shubnikov-de Haas measurements of the 2-D electron gas in pseudomorphic In0.1Ga0.9As grown on GaAs. Superlattices and Microstructures. 4(4-5). 619–621. 1 indexed citations
16.
Klem, J. F., Daming Huang, H. Morkoç̌, Y. E. Ihm, & N. Ōtsuka. (1987). Molecular beam epitaxial growth and low-temperature optical characterization of GaAs0.5Sb0.5 on InP. Applied Physics Letters. 50(19). 1364–1366. 33 indexed citations
17.
Norris, George B., D. C. Look, W. Kopp, J. F. Klem, & H. Morkoç̌. (1985). Theoretical and experimental capacitance-voltage behavior of Al0.3Ga0.7As/GaAs modulation-doped heterojunctions: Relation of conduction-band discontinuity to donor energy. Applied Physics Letters. 47(4). 423–425. 23 indexed citations
18.
Ketterson, A., et al.. (1985). Extremely low contact resistances for AlGaAs/GaAs modulation-doped field-effect transistor structures. Journal of Applied Physics. 57(6). 2305–2307. 25 indexed citations
19.
Nathan, M. I., M. Heiblum, J. F. Klem, & H. Morkoç̌. (1984). Persistent photoconductivity in AlGaAs–GaAs heterostructures. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 2(2). 167–169. 11 indexed citations
20.
Fischer, R., W. T. Masselink, T. Henderson, et al.. (1984). IIA-6 analysis of (Al, Ga)As/GaAs MODFET current characteristics at 77 K: Elimination of current collapse, observation of transconductance dip. IEEE Transactions on Electron Devices. 31(12). 1963–1964. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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