G.O. Munns

554 total citations
49 papers, 426 citations indexed

About

G.O. Munns is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, G.O. Munns has authored 49 papers receiving a total of 426 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Atomic and Molecular Physics, and Optics, 39 papers in Electrical and Electronic Engineering and 7 papers in Condensed Matter Physics. Recurrent topics in G.O. Munns's work include Semiconductor Quantum Structures and Devices (38 papers), Semiconductor materials and devices (15 papers) and Semiconductor Lasers and Optical Devices (12 papers). G.O. Munns is often cited by papers focused on Semiconductor Quantum Structures and Devices (38 papers), Semiconductor materials and devices (15 papers) and Semiconductor Lasers and Optical Devices (12 papers). G.O. Munns collaborates with scholars based in United States, Ireland and United Kingdom. G.O. Munns's co-authors include H. Morkoç̌, R. Houdré, G.I. Haddad, N. Ōtsuka, G.I. Haddad, Dean H. Levi, Chang‐Ho Choi, M. V. Klein, M.E. Sherwin and J.R. East and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and The Journal of the Acoustical Society of America.

In The Last Decade

G.O. Munns

45 papers receiving 402 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G.O. Munns United States 11 352 286 113 49 39 49 426
M. B. S. Hesselberth Netherlands 12 115 0.3× 224 0.8× 238 2.1× 60 1.2× 79 2.0× 21 440
W. Maaß Germany 10 211 0.6× 301 1.1× 76 0.7× 56 1.1× 53 1.4× 32 373
Maruf Hossain Germany 15 418 1.2× 97 0.3× 20 0.2× 66 1.3× 87 2.2× 76 551
Benjamin Lemke Germany 9 219 0.6× 207 0.7× 39 0.3× 73 1.5× 91 2.3× 25 353
C. J. Hitzman United States 9 503 1.4× 242 0.8× 73 0.6× 112 2.3× 140 3.6× 22 607
G. C. Tettamanzi Australia 13 264 0.8× 286 1.0× 49 0.4× 41 0.8× 63 1.6× 28 384
Andrew Pauza United Kingdom 15 350 1.0× 111 0.4× 171 1.5× 74 1.5× 308 7.9× 31 536
Katarzyna Holc Germany 11 206 0.6× 167 0.6× 229 2.0× 164 3.3× 80 2.1× 31 452
Yuzo Furukawa Japan 15 464 1.3× 372 1.3× 274 2.4× 143 2.9× 68 1.7× 41 575
Hidefumi Mori Japan 15 491 1.4× 377 1.3× 46 0.4× 103 2.1× 130 3.3× 46 614

Countries citing papers authored by G.O. Munns

Since Specialization
Citations

This map shows the geographic impact of G.O. Munns's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.O. Munns with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.O. Munns more than expected).

Fields of papers citing papers by G.O. Munns

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.O. Munns. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.O. Munns. The network helps show where G.O. Munns may publish in the future.

Co-authorship network of co-authors of G.O. Munns

This figure shows the co-authorship network connecting the top 25 collaborators of G.O. Munns. A scholar is included among the top collaborators of G.O. Munns based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G.O. Munns. G.O. Munns is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Neumaier, Bernd, Alexander Drzezga, Dirk Wiedermann, et al.. (2021). Towards chronic deep brain stimulation in freely moving hemiparkinsonian rats: applicability and functionality of a fully implantable stimulation system. Journal of Neural Engineering. 18(3). 36018–36018.
2.
Makino, Hiroshi, et al.. (2018). A high‐reliability alumina‐platinum multilayer system for implantable medical devices. International Journal of Applied Ceramic Technology. 16(1). 324–334. 2 indexed citations
3.
Santa, Wesley, Andrew J. Thom, Xin Su, et al.. (2015). A fully implantable and rechargeable neurostimulation system for animal research. 418–421. 8 indexed citations
5.
Witkowski, L., H.Q. Tserng, P. Saunier, et al.. (2005). Effects of AlGaN/GaN HEMT structure on RF reliability. Electronics Letters. 41(3). 155–157. 53 indexed citations
6.
Tserng, H.Q., L. Witkowski, P. Saunier, et al.. (2004). Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates. Electronics Letters. 40(24). 1547–1548. 19 indexed citations
7.
Kwon, Youngwoo, T. Brock, Geok Ing Ng, et al.. (2003). F/sub max/-enhancement in CBE-grown InAlAs/InGaAs HEMT's using novel self-aligned offset-gate technology. 360–363. 1 indexed citations
8.
Munns, G.O., et al.. (2002). Co-integration of high speed heterojunction bipolar transistors (HBTs) and tunnel diodes. 465–474. 2 indexed citations
10.
Munns, G.O., et al.. (1997). High f/sub max/ InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE. IEEE Electron Device Letters. 18(11). 553–555. 15 indexed citations
11.
Munns, G.O., et al.. (1996). Co-integration of high speed InP-based HBTs and RTDs using chemical beam epitaxy. Journal of Crystal Growth. 164(1-4). 454–459. 2 indexed citations
12.
Munns, G.O., et al.. (1993). Parametric investigation of InGaAs/InAlAs HEMTs grown by CBE. Journal of Crystal Growth. 127(1-4). 25–28. 2 indexed citations
13.
Munns, G.O., M.E. Sherwin, T. Brock, et al.. (1992). InAlAs/InGaAs/InP sub-micron HEMTs grown by CBE. Journal of Crystal Growth. 120(1-4). 184–188. 5 indexed citations
14.
Sherwin, M.E., et al.. (1991). Technical aspects of InGaAs MOMBE — shutter action, system drift, and material quality. Journal of Crystal Growth. 110(3). 452–456. 2 indexed citations
15.
Choi, Chang‐Ho, N. Ōtsuka, G.O. Munns, et al.. (1987). Effect of i ns i t u and e xs i t u annealing on dislocations in GaAs on Si substrates. Applied Physics Letters. 50(15). 992–994. 105 indexed citations
16.
Munns, G.O., et al.. (1987). Characteristics of p-GaAs/n-Si heterojunctions grown by molecular-beam epitaxy. Journal of Applied Physics. 62(9). 3860–3865. 7 indexed citations
17.
Houdré, R., G.O. Munns, H. Morkoç̌, et al.. (1987). Dislocation Reduction Via Annealing Of GaAs Grown On Si Substrates. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 796. 27–27. 2 indexed citations
18.
Ünlü, M. Selim, et al.. (1987). Characteristics of annealed p/n junctions between GaAs and Si (100). Applied Physics Letters. 51(24). 1995–1997. 2 indexed citations
19.
Munns, G.O., et al.. (1986). Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers. Applied Physics Letters. 49(19). 1257–1259. 15 indexed citations
20.
Munns, G.O., et al.. (1985). Comparison of new and “dead” nylon guitar strings. The Journal of the Acoustical Society of America. 78(S1). S34–S34.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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