N. Moll

965 total citations
37 papers, 773 citations indexed

About

N. Moll is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, N. Moll has authored 37 papers receiving a total of 773 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 5 papers in Materials Chemistry. Recurrent topics in N. Moll's work include Semiconductor materials and devices (21 papers), Semiconductor Quantum Structures and Devices (16 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). N. Moll is often cited by papers focused on Semiconductor materials and devices (21 papers), Semiconductor Quantum Structures and Devices (16 papers) and Advancements in Semiconductor Devices and Circuit Design (13 papers). N. Moll collaborates with scholars based in United States, Canada and United Kingdom. N. Moll's co-authors include M. R. Hueschen, A. Fischer-Colbrie, William F. Stickle, Hans Rohdin, Chung‐Yi Su, D. Coulman, O.W. Otto, Jie Liu, D. R. Chamberlin and Jennifer Lu and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

N. Moll

36 papers receiving 739 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Moll United States 16 601 352 160 157 102 37 773
T. Takebe Japan 14 458 0.8× 371 1.1× 79 0.5× 212 1.4× 115 1.1× 40 588
Igor Aksenov Japan 14 447 0.7× 242 0.7× 168 1.1× 352 2.2× 42 0.4× 44 615
Marco Lisker Germany 15 632 1.1× 180 0.5× 67 0.4× 292 1.9× 136 1.3× 115 780
Haijiang Yu China 12 359 0.6× 177 0.5× 255 1.6× 142 0.9× 60 0.6× 17 632
Meng‐Chyi Wu Taiwan 12 437 0.7× 260 0.7× 254 1.6× 230 1.5× 99 1.0× 51 615
Yuji Suwa Japan 13 270 0.4× 204 0.6× 128 0.8× 199 1.3× 87 0.9× 54 525
N. Dharmarasu Singapore 14 451 0.8× 217 0.6× 263 1.6× 177 1.1× 67 0.7× 67 628
L. Stockman Belgium 10 130 0.2× 309 0.9× 62 0.4× 512 3.3× 136 1.3× 16 712
J. E. Mee United States 12 381 0.6× 272 0.8× 74 0.5× 184 1.2× 67 0.7× 21 588
D. Olligs Germany 9 343 0.6× 452 1.3× 121 0.8× 135 0.9× 77 0.8× 11 623

Countries citing papers authored by N. Moll

Since Specialization
Citations

This map shows the geographic impact of N. Moll's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Moll with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Moll more than expected).

Fields of papers citing papers by N. Moll

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Moll. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Moll. The network helps show where N. Moll may publish in the future.

Co-authorship network of co-authors of N. Moll

This figure shows the co-authorship network connecting the top 25 collaborators of N. Moll. A scholar is included among the top collaborators of N. Moll based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Moll. N. Moll is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kroener, Michael, et al.. (2014). Characterization of a variable reluctance harvester. Journal of Physics Conference Series. 557. 12035–12035. 7 indexed citations
2.
Lu, Jennifer, T.E. Kopley, N. Moll, et al.. (2005). High-Quality Single-Walled Carbon Nanotubes with Small Diameter, Controlled Density, and Ordered Locations Using a Polyferrocenylsilane Block Copolymer Catalyst Precursor. Chemistry of Materials. 17(9). 2227–2231. 108 indexed citations
3.
Yi, Sha, S. J. Chung, Hans Rohdin, et al.. (2003). Growth and device performance of InP/GaAsSb HBTs. 380–384. 5 indexed citations
4.
5.
Rohdin, Hans, et al.. (2002). Drain resistance degradation under high fields in AlInAs/GaInAs MODFETs. 376–379. 14 indexed citations
6.
Bahl, S.R., et al.. (2000). Be diffusion in InGaAs/InP heterojunction bipolar transistors. IEEE Electron Device Letters. 21(7). 332–334. 22 indexed citations
7.
Rohdin, Hans, N. Moll, A. M. Bratkovsky, & Chung‐Yi Su. (1999). Dispersion and tunneling analysis of the interfacial gate resistance in Schottky barriers. Physical review. B, Condensed matter. 59(20). 13102–13113. 18 indexed citations
8.
Rohdin, Hans, et al.. (1999). A 0.1-μm MHEMT millimeter-wave IC technology designed for manufacturability. Solid-State Electronics. 43(8). 1645–1654. 3 indexed citations
9.
Gardner, Nathan F., H. C. Chui, Michael R. Krames, et al.. (1999). 1.4× efficiency improvement in transparent-substrate (AlxGa1−x)0.5In0.5P light-emitting diodes with thin (⩽2000 Å) active regions. Applied Physics Letters. 74(15). 2230–2232. 38 indexed citations
10.
Hasnain, G., Wengang Bi, John T. Anderson, et al.. (1998). Buried-mesa avalanche photodiodes. IEEE Journal of Quantum Electronics. 34(12). 2321–2326. 15 indexed citations
11.
Moll, N., M. Feng, & J. Laskar. (1994). Comment on "On the speed and noise performance of direct ion-implanted GaAs MESFET's" [with reply]. IEEE Transactions on Electron Devices. 41(1). 115–118. 2 indexed citations
12.
Moll, N., et al.. (1992). Semiconductor damage from inert and molecular gas plasmas. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(1). 46–52. 23 indexed citations
13.
Moll, N., et al.. (1990). Design and surface chemistry of nonalloyed ohmic contacts to pseudomorphic InGaAs on n+GaAs. Journal of Applied Physics. 68(6). 2833–2838. 6 indexed citations
14.
Moll, N., et al.. (1990). Surface contamination and damage from CF4 and SF6 reactive ion etching of silicon oxide on gallium arsenide. Journal of Electronic Materials. 19(4). 385–391. 26 indexed citations
15.
Moll, N., M. R. Hueschen, & A. Fischer-Colbrie. (1988). Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs. IEEE Transactions on Electron Devices. 35(7). 879–886. 167 indexed citations
16.
Moll, N., et al.. (1988). The role of aluminum in selective reactive ion etching of GaAs on AlGaAs. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 6(6). 1645–1649. 14 indexed citations
17.
Moll, N., A. Fischer-Colbrie, & M. R. Hueschen. (1987). IIA-5 Pulse-doped AlGaAs/InGaAs pseudomorphic MODFET's. IEEE Transactions on Electron Devices. 34(11). 2357–2358. 7 indexed citations
18.
Dolfi, David W. & N. Moll. (1984). Thermooptic bypass switch for multimode optical libers. WE4–WE4.
19.
Moll, N.. (1981). Optical fibers for transmission. Proceedings of the IEEE. 69(6). 765–766. 4 indexed citations
20.
Otto, O.W. & N. Moll. (1972). Lithium-niobate-silicon surface-wave convoluter. Electronics Letters. 8(24). 600–602. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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