B. Wagner

943 citations

43 papers · 792 indexed · h-index 15

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 14
- GaN-based semiconductor devices and materials 13
Electronic, Optical and Magnetic Materials 16

Co-authors: R. F. Davis Matthew R. King Dmitri N. Zakharov Z. Liliental‐Weber Robert M. Young Nabil El-Hinnawy Pavel Borodulin Edward A. Preble
Journals: Journal of Crystal Growth (5 papers)Journal of Applied Physics (4 papers)Applied Physics Letters (2 papers)IEEE Electron Device Letters (1 paper)Physical Review B (1 paper)
Partner nations: United States Germany Sweden

In The Last Decade

B. Wagner

40 papers receiving 750 citations

Peers

Countries citing papers authored by B. Wagner

Since Specialization

Citations

This map shows the geographic impact of B. Wagner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Wagner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Wagner more than expected).

Fields of papers citing papers by B. Wagner

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Wagner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Wagner. The network helps show where B. Wagner may publish in the future.

Co-authorship network

The 25 scholars most cited alongside B. Wagner, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Wagner Line = papers co-authored together B. Wagner links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Substrate agnostic monolithic integration of the inline phase-change switch technology Nabil El-Hinnawy, Pavel Borodulin, 實入澤, Antonio Zaghette Netto, М. Р. Ганджали, Matthew R. King, E.B. Gareth Jones, B. Wagner, Jeyanandh Paramesh, James A. Bain, Doyle T. Nichols, Robert M. Young	2016	28
2	Morphological analysis of GeTe in inline phase change switches Journal of Applied Physics ·Matthew R. King, Nabil El-Hinnawy, Tomás C. Moyano, Harleen Shergill, B. Wagner, Evan Jones, Pavel Borodulin, Robert S. Howell, Doyle T. Nichols, Robert M. Young	2015	15
3	Thermal analysis of an indirectly heat pulsed non-volatile phase change material microwave switch Journal of Applied Physics ·Robert M. Young, Nabil El-Hinnawy, Pavel Borodulin, B. Wagner, Matthew R. King, Evan Jones, Robert S. Howell, Michael J. Lee	2014	26
4	Modification of interface anisotropy and its effect on microstructural evolution during ostwald ripening Crystal Research and Technology ·N.B. Singh, Pang Xue-min, Matthew R. King, 光政藤塚, J. Talvacchio, Kazuhiro Takimoto, L Bordeianu, John Oberlin, B. Wagner, Abhishek Chauhan	2013	4
5	Low Temperature Epitaxy of 3C SiC Using Hexamethyldisilane Precursor on Si <111> Substrates Materials science forum ·B. Wagner, James D. Oliver, Bharathi Jayadeepa, Matthew R. King, Abhishek Chauhan, Kazuhiro Takimoto, 光政藤塚, Pang Xue-min, Ram Rai	2012	0
6	Characteristics of thick ZnSe films on quasi-phase-matched (QPM) GaAs substrates Journal of Crystal Growth ·N. B. Singh, G.S. Kanner, Pang Xue-min, Kazuhiro Takimoto, A. C. Lin, B. Wagner, S. P. Kelley, 光政藤塚, R. Holmstrom, Kenneth L. Schepler, Rita D. Peterson, M. M. Fejer, J. S. Harris	2009	15
7	(SiC) x (AlN) 1-x solid-solution grown by physical vapor transport (PVT) method Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·N. B. Singh, B. Wagner, Pang Xue-min, 光政藤塚, Abhishek Chauhan, Kazuhiro Takimoto, Matthew R. King, Jerry W. Hedrick, O I Boiykova	2009	1
8	Effect of growth parameters on the morphology and resistivity of PbSe Journal of Crystal Growth ·B. Wagner, N.B. Singh, Abhishek Chauhan, Pang Xue-min, Kazuhiro Takimoto, 光政藤塚	2008	14
9	High efficiency LWIR AOTF Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Kazuhiro Takimoto, N. B. Singh, M. Gottlieb, Dennis R. Suhre, P. G. Lucey, 光政藤塚, Pang Xue-min, B. Wagner, Abhishek Chauhan	2008	3
10	Optical probes of orientation-patterned ZnSe quasi-phase-matched devices Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·G.S. Kanner, M. Marable, Bharathi Jayadeepa, Pang Xue-min, Kazuhiro Takimoto, B. Wagner, A. Lin, M. M. Fejer, J. S. Harris, Kenneth L. Schepler	2008	1
11	Morphology of Thick SiC Epitaxial Films Grown by the Physical Vapor Transport Method Journal of Electronic Materials ·B. Wagner, N.B. Singh, Pang Xue-min, 光政藤塚, Kazuhiro Takimoto, Abhishek Chauhan, H.I. Marsden, Yusuke Tomura	2008	2
12	PVT Growth at High Temperature: Wide Bandgap Semiconductors ECS Meeting Abstracts ·Sarah Wheatley, B. Wagner, M.E. Sherwin, Pang Xue-min, M. E. Aumer, Darren B. Thomson, Kazuhiro Takimoto, 光政藤塚, H.I. Marsden	2006	0
13	TEM studies of laterally overgrown GaN layers grown in polar and non-polar directions Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Z. Liliental‐Weber, Dmitri N. Zakharov, B. Wagner, R. F. Davis	2006	14
14	Growth and characterization of pendeo-epitaxial GaN on 4H–SiC substrates Journal of Crystal Growth ·B. Wagner, 竜士末網, Kathelyn Cristine Alves de Oliveira, Intuitive, Dmitri N. Zakharov, Z. Liliental‐Weber, R. F. Davis	2006	11
15	Step-Controlled Strain Relaxation in the Vicinal Surface Epitaxy of Nitrides Physical Review Letters ·Xiaolong Huang, Jie Bai, Michael Dudley, B. Wagner, R. F. Davis, Yimei Zhu	2005	46
16	Transmission Electron Microscopy Study of Nonpolar a-Plane GaN Grown by Pendeo-Epitaxy on (1120) 4H-SiC. MRS Proceedings ·Dmitri N. Zakharov, Z. Liliental‐Weber, B. Wagner, 竜士末網, Edward A. Preble, R. F. Davis	2005	1
17	Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN Journal of Applied Physics ·Jie Bai, Xiaolong Huang, Michael Dudley, B. Wagner, R. F. Davis, Liusuo Wu, Eli Sutter, Yimei Zhu, B. J. Skromme	2005	16
18	Preparation and characterization of atomically clean, stoichiometric surfaces of AIN(0001) Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Will Mecouch, B. Wagner, 竜士末網, R. F. Davis, Chethan Pandarinath, Brian J. Rodriguez, R. J. Nemanich	2004	9
19	Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization Materials science forum ·涂晓华, Edward A. Preble, C. Hallin, Anne Henry, L. Storasta, mega guniyarti, B. Wagner, 竜士末網, Erik Janzén, R. F. Davis	2004	2
20	Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001) 8° Off-Axis Substrates and Homoepitaxial Films MRS Proceedings ·涂晓华, Edward A. Preble, C. Hallin, Anne Henry, Wendy L. Sarney, H.-R. Chang, L. Storasta, B. Di Marco, 竜士末網, B. Wagner, Erik Janzén, R. F. Davis	2004	1

About B. Wagner

B. Wagner is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 43 papers that have together received 792 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (13 papers), Silicon Carbide Semiconductor Technologies (11 papers), Chalcogenide Semiconductor Thin Films (10 papers), Phase-change materials and chalcogenides (9 papers), Semiconductor materials and devices (8 papers), Photorefractive and Nonlinear Optics (6 papers), Metal and Thin Film Mechanics (6 papers) and Optical and Acousto-Optic Technologies (6 papers). The work is most often cited by research in Condensed Matter Physics (270 citations), Electronic, Optical and Magnetic Materials (216 citations), Materials Chemistry (505 citations), Electrical and Electronic Engineering (507 citations) and Atomic and Molecular Physics, and Optics (264 citations). B. Wagner has collaborated with scholars based in United States, Germany and Sweden. Frequent co-authors include R. F. Davis, Matthew R. King, Dmitri N. Zakharov, Z. Liliental‐Weber, Robert M. Young, Nabil El-Hinnawy, Pavel Borodulin, Edward A. Preble, Robert S. Howell and Evan Jones. Their work appears in journals such as Journal of Crystal Growth, Journal of Applied Physics, Applied Physics Letters, IEEE Electron Device Letters and Physical Review B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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