Helena Castán

1.6k total citations
143 papers, 1.3k citations indexed

About

Helena Castán is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Helena Castán has authored 143 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 138 papers in Electrical and Electronic Engineering, 39 papers in Atomic and Molecular Physics, and Optics and 37 papers in Materials Chemistry. Recurrent topics in Helena Castán's work include Semiconductor materials and devices (92 papers), Ferroelectric and Negative Capacitance Devices (63 papers) and Advanced Memory and Neural Computing (54 papers). Helena Castán is often cited by papers focused on Semiconductor materials and devices (92 papers), Ferroelectric and Negative Capacitance Devices (63 papers) and Advanced Memory and Neural Computing (54 papers). Helena Castán collaborates with scholars based in Spain, Estonia and Finland. Helena Castán's co-authors include S. Dueñas, H. García, Kaupo Kukli, G. González-Dı́az, I. Mártil, L. Bailón, J. Barbolla, F. Campabadal, Mikko Ritala and Markku Leskelä and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Helena Castán

137 papers receiving 1.3k citations

Peers

Helena Castán

EEE

AMPO

EOMM

CMN

S. Dueñas Spain

H. García Spain

Zhisong Xiao China

Kiroubanand Sankaran Belgium

András Halbritter Hungary

S. Blonkowski France

Munehiro Tada Japan

Hi‐Deok Lee South Korea

Hsin-Chieh Yu Taiwan

Gyu Weon Hwang South Korea

S. Dueñas Spain

Helena Castán

1.3k ×1.1

EEE

498 ×1.1

305 ×1.3

AMPO

135 ×1.1

EOMM

105 ×1.0

CMN

Citations per year, relative to Helena Castán Helena Castán (= 1×) peers S. Dueñas

Countries citing papers authored by Helena Castán

Since Specialization

Citations

This map shows the geographic impact of Helena Castán's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Helena Castán with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Helena Castán more than expected).

Fields of papers citing papers by Helena Castán

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Helena Castán. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Helena Castán. The network helps show where Helena Castán may publish in the future.

Co-authorship network of co-authors of Helena Castán

This figure shows the co-authorship network connecting the top 25 collaborators of Helena Castán. A scholar is included among the top collaborators of Helena Castán based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Helena Castán. Helena Castán is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Castán, Helena, et al.. (2024). Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature. IEEE Electron Device Letters. 45(12). 2391–2394. 2 indexed citations

García, H., Fernando Aguirre, Mireia Bargalló González, et al.. (2023). Effects of the voltage ramp rate on the conduction characteristics of HfO₂-based resistive switching devices. Journal of Physics D Applied Physics. 56(36). 365108–365108. 8 indexed citations

García, H., et al.. (2023). Impact of the temperature on the conductive filament morphology in HfO2-based RRAM. Materials Letters. 357. 135699–135699. 4 indexed citations

García, H., Óscar G. Ossorio, Mireia Bargalló González, et al.. (2023). Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO₂-Based Resistive Switching Devices. 1–4. 1 indexed citations

Chawa, Mohamad Moner Al, Helena Castán, S. Dueñas, et al.. (2022). Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux. 1–4.

Kukli, Kaupo, Lauri Aarik, S. Dueñas, et al.. (2022). Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition. Materials. 15(3). 877–877. 3 indexed citations

García, H., Mireia Bargalló González, M. Zabala, et al.. (2022). Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks. Electronics. 11(3). 479–479. 6 indexed citations

Jiménez-Molinos, F., H. García, Aivar Tarre, et al.. (2022). Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction. Journal of Applied Physics. 132(19). 6 indexed citations

Picos, Rodrigo, Stavros G. Stavrinides, Mohamad Moner Al Chawa, et al.. (2022). Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map. Electronics. 11(11). 1672–1672. 2 indexed citations

10.

Ossorio, Óscar G., H. García, S. Dueñas, et al.. (2021). Performance Assessment of Amorphous HfO ₂ -Based RRAM Devices for Neuromorphic Applications. ECS Journal of Solid State Science and Technology. 10(8). 83002–83002. 5 indexed citations

11.

García, H., Óscar G. Ossorio, S. Dueñas, et al.. (2021). Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices. Electronics. 10(22). 2816–2816. 16 indexed citations

12.

Ossorio, Óscar G., H. García, S. Dueñas, et al.. (2021). Performance Assessment of Amorphous HfO₂-Based RRAM Devices for Neuromorphic Applications. ECS Transactions. 102(2). 29–35. 2 indexed citations

13.

Kahro, Tauno, Aivar Tarre, Tanel Käämbre, et al.. (2021). Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media. ACS Applied Nano Materials. 4(5). 5152–5163. 16 indexed citations

14.

García, H., Óscar G. Ossorio, S. Dueñas, & Helena Castán. (2020). (Invited) Current and Voltage Control of Intermediate States in Bipolar Rram Devices for Neuristor Applications. ECS Transactions. 97(1). 17–20. 1 indexed citations

15.

Dueñas, S., Helena Castán, Óscar G. Ossorio, et al.. (2020). Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films. ECS Transactions. 97(1). 3–6. 1 indexed citations

16.

Kukli, Kaupo, Marianna Kemell, Helena Castán, et al.. (2020). Magnetic properties and resistive switching in mixture films and nanolaminates consisting of iron and silicon oxides grown by atomic layer deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(4). 10 indexed citations

17.

Rähn, Mihkel, Timo Sajavaara, S. Dueñas, et al.. (2018). Properties of Atomic Layer Deposited Nanolaminates of Zirconium and Cobalt Oxides. ECS Journal of Solid State Science and Technology. 7(8). P402–P409. 1 indexed citations

18.

Castán, Helena, S. Dueñas, Kaupo Kukli, et al.. (2018). Study of the Influence of the Dielectric Composition of Al/Ti/ZrO₂:Al₂O₃/TiN/Si/Al Structures on the Resistive Switching Behavior for Memory Applications. ECS Transactions. 85(8). 143–148. 3 indexed citations

19.

Dueñas, S., et al.. (2018). Memory Maps: Reading RRAM Devices without Power Consumption. ECS Transactions. 85(8). 201–205. 11 indexed citations

20.

Kukli, Kaupo, Marianna Kemell, Helena Castán, et al.. (2018). Atomic Layer Deposition and Properties of HfO₂-Al₂O₃ Nanolaminates. ECS Journal of Solid State Science and Technology. 7(9). P501–P508. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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