Seiichi Iwata

627 total citations
33 papers, 565 citations indexed

About

Seiichi Iwata is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, Seiichi Iwata has authored 33 papers receiving a total of 565 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 13 papers in Atomic and Molecular Physics, and Optics and 9 papers in Surfaces, Coatings and Films. Recurrent topics in Seiichi Iwata's work include Semiconductor materials and devices (16 papers), Semiconductor materials and interfaces (13 papers) and Silicon and Solar Cell Technologies (10 papers). Seiichi Iwata is often cited by papers focused on Semiconductor materials and devices (16 papers), Semiconductor materials and interfaces (13 papers) and Silicon and Solar Cell Technologies (10 papers). Seiichi Iwata collaborates with scholars based in Japan and United States. Seiichi Iwata's co-authors include Akitoshi Ishizaka, Yoshiaki Kamigaki, Hiroshi Yamamoto, Nobuyoshi Kobayashi, Naoki Yamamoto, Nobuo Hara, Byoung‐Gon Yu, Yasushiro Nishioka, T. P. and Takahide Ikeda and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Surface Science.

In The Last Decade

Seiichi Iwata

32 papers receiving 536 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Seiichi Iwata Japan 9 489 222 198 142 77 33 565
Y. Takai Japan 12 253 0.5× 130 0.6× 159 0.8× 83 0.6× 65 0.8× 49 373
J. Strane United States 9 401 0.8× 42 0.2× 209 1.1× 168 1.2× 68 0.9× 23 531
Z. J. Radzimski United States 16 554 1.1× 85 0.4× 197 1.0× 213 1.5× 85 1.1× 55 696
S.D. Foulias Greece 13 125 0.3× 77 0.3× 240 1.2× 162 1.1× 29 0.4× 35 367
I. Hoflijk Belgium 13 602 1.2× 73 0.3× 188 0.9× 254 1.8× 77 1.0× 56 670
E. de Frésart United States 15 805 1.6× 54 0.2× 295 1.5× 329 2.3× 72 0.9× 24 924
W. Bergholz Germany 13 774 1.6× 35 0.2× 183 0.9× 363 2.6× 68 0.9× 40 852
Raphaël Renoud France 15 320 0.7× 164 0.7× 295 1.5× 34 0.2× 32 0.4× 44 520
K.H. Zaininger United States 15 587 1.2× 31 0.1× 189 1.0× 225 1.6× 34 0.4× 31 652
Norio Hirashita Japan 16 814 1.7× 42 0.2× 235 1.2× 198 1.4× 36 0.5× 56 945

Countries citing papers authored by Seiichi Iwata

Since Specialization
Citations

This map shows the geographic impact of Seiichi Iwata's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Seiichi Iwata with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Seiichi Iwata more than expected).

Fields of papers citing papers by Seiichi Iwata

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Seiichi Iwata. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Seiichi Iwata. The network helps show where Seiichi Iwata may publish in the future.

Co-authorship network of co-authors of Seiichi Iwata

This figure shows the co-authorship network connecting the top 25 collaborators of Seiichi Iwata. A scholar is included among the top collaborators of Seiichi Iwata based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Seiichi Iwata. Seiichi Iwata is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Iwata, Seiichi, Yuzuru Ohji, & Akitoshi Ishizaka. (1992). Detection of Electric Charges in SiO<SUB>2</SUB>/Si by ESCA. Journal of the Japan Institute of Metals and Materials. 56(7). 863–864. 1 indexed citations
2.
Iwata, Seiichi. (1989). Can ULSI be Manufactured. Bulletin of the Japan Institute of Metals. 28(1). 5–6. 2 indexed citations
3.
Iwata, Seiichi, et al.. (1989). Evaluation of Adherence of CVD Tungsten Silicide Film to Polycrystalline Silicon. Materials Transactions JIM. 30(6). 403–410. 1 indexed citations
4.
Iwata, Seiichi, et al.. (1988). Evaluation of Adhesion of CVD Tungsten Silicide Film to Polycrystalline Silicon. Journal of the Japan Institute of Metals and Materials. 52(7). 677–684. 1 indexed citations
5.
Iwata, Seiichi, Naoki Yamamoto, & Nobuyoshi Kobayashi. (1987). Si Oxide Formation at Mo/Si Interface. Journal of the Japan Institute of Metals and Materials. 51(2). 138–141. 2 indexed citations
6.
Kobayashi, Nobuyoshi, N. Hashimoto, K. Ohyu, T. Kaga, & Seiichi Iwata. (1986). Comparison of TiSi2 and WSI2 Silicided Shallow Junctions for Sub-Micron CMOSs. Symposium on VLSI Technology. 49–50. 2 indexed citations
7.
Iwata, Seiichi. (1986). Gate electrode material for MOS VLSI's.. Bulletin of the Japan Institute of Metals. 25(6). 491–496. 3 indexed citations
8.
Hara, Nobuo, Nobuyoshi Kobayashi, Seiichi Iwata, & Naoki Yamamoto. (1986). Non-Selective Tungsten CVD Technology for Gate Electrodes and Interconnections. 3 indexed citations
9.
Iwata, Seiichi, et al.. (1986). Oxidation of Si Substrate during Al Evaporation. Journal of the Japan Institute of Metals and Materials. 50(3). 287–292. 2 indexed citations
10.
Kobayashi, Nobuyoshi, Seiichi Iwata, Naoki Yamamoto, & Tomoyuki Terada. (1983). A Novel Tungsten Gate Technology for VLSI Applications. Symposium on VLSI Technology. 94–95. 2 indexed citations
11.
Takeda, Eiji, et al.. (1983). Characteristics of Tungsten Gate MOSFETs for VLSIs. 2 indexed citations
12.
Iwata, Seiichi, et al.. (1981). Characterization of Al/Si Interface as Applied to Schottky Barrier Diode Characteristics. Journal of the Japan Institute of Metals and Materials. 45(5). 542–543. 3 indexed citations
13.
Iwata, Seiichi. (1981). . Bulletin of the Japan Institute of Metals. 20(10). 831–837. 1 indexed citations
14.
Iwata, Seiichi & Akitoshi Ishizaka. (1981). A Study on Al/SiO<SUB>2</SUB> Reaction by ESCA. Journal of the Japan Institute of Metals and Materials. 45(5). 544–545. 1 indexed citations
15.
Iwata, Seiichi, Akitoshi Ishizaka, & Hiroshi Yamamoto. (1981). Influence of Al Oxide Film on Thermocompression Bonding of Au Wire to Evaporated Al Film. Journal of the Japan Institute of Metals and Materials. 45(6). 603–609. 5 indexed citations
16.
Ishizaka, Akitoshi & Seiichi Iwata. (1980). Si-SiO2 interface characterization from angular dependence of x-ray photoelectron spectra. Applied Physics Letters. 36(1). 71–73. 40 indexed citations
17.
Kikuchi, Akira, et al.. (1980). Electron transport across aluminum/ultrathin silicon oxide/phosphorus implanted silicon barriers. Journal of Applied Physics. 51(9). 4913–4918. 8 indexed citations
18.
Iwata, Seiichi & Akitoshi Ishizaka. (1979). Chemical Shift for Thermally Oxidized Silicon as Measured by ESCA. Journal of the Japan Institute of Metals and Materials. 43(5). 380–388. 13 indexed citations
19.
Iwata, Seiichi & Akitoshi Ishizaka. (1979). Electric Charging of Thin Insulating Film by X-Radiation. Journal of the Japan Institute of Metals and Materials. 43(5). 388–392. 6 indexed citations
20.
Iwata, Seiichi & Akitoshi Ishizaka. (1978). A Consideration on the Chemical Shift for Thin Insulating Films as Measured by ESCA. Journal of the Japan Institute of Metals and Materials. 42(10). 1020–1021. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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