N. Natsuaki

854 total citations
48 papers, 647 citations indexed

About

N. Natsuaki is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, N. Natsuaki has authored 48 papers receiving a total of 647 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 17 papers in Computational Mechanics and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in N. Natsuaki's work include Silicon and Solar Cell Technologies (30 papers), Integrated Circuits and Semiconductor Failure Analysis (23 papers) and Semiconductor materials and devices (18 papers). N. Natsuaki is often cited by papers focused on Silicon and Solar Cell Technologies (30 papers), Integrated Circuits and Semiconductor Failure Analysis (23 papers) and Semiconductor materials and devices (18 papers). N. Natsuaki collaborates with scholars based in Japan and United States. N. Natsuaki's co-authors include M. Tamura, K. Ohyu, Yasuo Wada, T. Tokuyama, Masanobu Miyao, Teruaki Motooka, Atsushi Hiraiwa, Yoshio Itoh, Takeshi Tokuyama and Yasushiro Nishioka and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

N. Natsuaki

47 papers receiving 609 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Natsuaki Japan 13 555 207 184 102 48 48 647
R. V. Knoell United States 11 492 0.9× 208 1.0× 228 1.2× 155 1.5× 44 0.9× 21 600
W.B. de Boer Netherlands 15 604 1.1× 93 0.4× 250 1.4× 181 1.8× 76 1.6× 37 677
E. F. Krimmel Germany 12 295 0.5× 220 1.1× 55 0.3× 131 1.3× 49 1.0× 43 383
D. Venables United States 12 492 0.9× 99 0.5× 171 0.9× 115 1.1× 41 0.9× 44 549
B. de Mauduit France 13 637 1.1× 172 0.8× 309 1.7× 198 1.9× 57 1.2× 34 689
R. T. Fulks United States 12 378 0.7× 52 0.3× 205 1.1× 154 1.5× 46 1.0× 27 447
S. Yu. Shiryaev Denmark 13 475 0.9× 108 0.5× 429 2.3× 219 2.1× 115 2.4× 41 633
G. F. Doughty United Kingdom 6 260 0.5× 223 1.1× 81 0.4× 166 1.6× 72 1.5× 15 451
G. M. Shedd United States 10 200 0.4× 122 0.6× 194 1.1× 119 1.2× 107 2.2× 16 472
Joerg Weber Germany 13 551 1.0× 68 0.3× 417 2.3× 186 1.8× 35 0.7× 68 735

Countries citing papers authored by N. Natsuaki

Since Specialization
Citations

This map shows the geographic impact of N. Natsuaki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Natsuaki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Natsuaki more than expected).

Fields of papers citing papers by N. Natsuaki

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Natsuaki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Natsuaki. The network helps show where N. Natsuaki may publish in the future.

Co-authorship network of co-authors of N. Natsuaki

This figure shows the co-authorship network connecting the top 25 collaborators of N. Natsuaki. A scholar is included among the top collaborators of N. Natsuaki based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Natsuaki. N. Natsuaki is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Felch, Susan B., et al.. (2005). 90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 237(1-2). 53–57. 1 indexed citations
2.
Nishigawa, Goro, et al.. (2003). Visual observation of the dynamic flow of elastomer rubber impression material between the impression tray and oral mucosa while seating the impression tray. Journal of Oral Rehabilitation. 30(6). 608–613. 7 indexed citations
3.
Hiraiwa, Atsushi, et al.. (2002). Local-field-enhancement model of DRAM retention failure. 157–160. 23 indexed citations
4.
Ogasawara, Masahiro, et al.. (2002). Physical model of bit-to-bit variation in data retention time of DRAMs. 164–165. 3 indexed citations
5.
Ogasawara, Makoto, et al.. (1999). Inactivation of Low‐Dose Implanted Phosphorus Pileup in the Silicon Side of an Si / SiO2 Interface after Oxidation. Journal of The Electrochemical Society. 146(1). 367–371. 9 indexed citations
6.
Hiraiwa, Atsushi, et al.. (1996). Statistical modeling of dynamic random access memory data retention characteristics. Journal of Applied Physics. 80(5). 3091–3099. 22 indexed citations
7.
Natsuaki, N., et al.. (1995). ULSI-process demands of contamination control on ion implantation. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 96(1-2). 62–67. 10 indexed citations
8.
Kobayashi, Yutaka, et al.. (1992). Characteristics of Bipolar Transistors with Various Depths of n+ Buried Layers Formed by High-Energy Ion Implantation. Japanese Journal of Applied Physics. 31(2R). 156–156. 6 indexed citations
9.
Ohyu, K., et al.. (1990). Advantages of Fluorine Introduction in Boron Implanted Shallow p+/n-Junction Formation. Japanese Journal of Applied Physics. 29(3R). 457–457. 48 indexed citations
10.
Goto, Hidekazu, Masafumi Tamura, & N. Natsuaki. (1989). Reduction of High Energy P Implantation Induced Secondary Defects in Si by Additional C Implantation. 1 indexed citations
11.
Nishioka, Yasushiro, K. Ohyu, Yuzuru Ohji, et al.. (1989). The effect of fluorine implantation on the interface radiation hardness of Si-gate metal-oxide-semiconductor transistors. Journal of Applied Physics. 66(8). 3909–3912. 21 indexed citations
12.
Tamura, M., et al.. (1987). MeV-energy B+, P+ and As+ ion implantation into Si. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 21(1-4). 438–446. 78 indexed citations
13.
Tamura, M. & N. Natsuaki. (1986). Secondary Defects in 2 MeV Phosphorus Implanted Silicon. Japanese Journal of Applied Physics. 25(6A). L474–L474. 14 indexed citations
14.
Kimura, Kenji, Michi-hiko Mannami, & N. Natsuaki. (1982). Planar Dechannelling of Energetic Ions at Dislocations. III. Dechannelling at Edge Dislocations in Si. Japanese Journal of Applied Physics. 21(12R). 1769–1769. 1 indexed citations
15.
Miyao, Masanobu, Teruaki Motooka, N. Natsuaki, & T. Tokuyama. (1981). Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing. Solid State Communications. 37(7). 605–608. 48 indexed citations
16.
Natsuaki, N., M. Tamura, & T. Tokuyama. (1980). Nonequilibrium solid solutions obtained by heavy ion implantation and laser annealing. Journal of Applied Physics. 51(6). 3373–3382. 33 indexed citations
17.
Natsuaki, N., K. Ohyu, & T. Tokuyama. (1978). Spatial dose uniformity monitor for electrically scanned ion beam. Review of Scientific Instruments. 49(9). 1300–1304. 9 indexed citations
18.
Natsuaki, N., M. Tamura, Masanobu Miyao, & Takeshi Tokuyama. (1977). Anomalous Residual Defects in Silicon after Annealing of Through-Oxide Phosphorus Implanted Samples. Japanese Journal of Applied Physics. 16(S1). 47–47. 7 indexed citations
19.
Miyao, Masanobu, et al.. (1976). Low Temperature Annealing Characteristics of Phosphorus-Implanted Silicon. Japanese Journal of Applied Physics. 15(S1). 57–57. 4 indexed citations
20.
Nishimatsu, Shigeru, N. Natsuaki, T. Warabisako, & T. Tokuyama. (1971). ION-IMPLANTED MOSFET.. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 68(8). 1053–8. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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