L. Henry

959 citations

62 papers · 678 indexed · h-index 13

Impact in

Electrical and Electronic Engineering top 10%
- Electrostatic Discharge in Electronics
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Electromagnetic Compatibility and Noise Suppression
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Lasers and Optical Devices
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Structural Biology 2
Surfaces, Coatings and Films 7
- Electron and X-Ray Spectroscopy Techniques 5

Co-authors: Jon Barth K. Verhaege Alain Le Corre D. Lecrosnier P.N. Favennec S. Loualiche Mary Alexandria Kelly H. L’Haridon
Journals: Electronics Letters (11 papers)Microelectronics Reliability (4 papers)Applied Physics Letters (2 papers)Thin Solid Films (2 papers)Journal of Applied Crystallography (2 papers)
Partner nations: United States France Germany

In The Last Decade

L. Henry

60 papers receiving 589 citations

Peers

Countries citing papers authored by L. Henry

Since Specialization

Citations

This map shows the geographic impact of L. Henry's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Henry with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Henry more than expected).

Fields of papers citing papers by L. Henry

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Henry. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Henry. The network helps show where L. Henry may publish in the future.

Co-authors

The 25 scholars most cited alongside L. Henry, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. Henry Line = papers co-authored together L. Henry links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Conflict-Aware Active Automata Learning Electronic Proceedings in Theoretical Computer Science ·Eva Runefelt, L. Henry, João Bettencourt Relvas, Alexandra Silva	2023	1
2	Diagnosing timed automata using timed markings International Journal on Software Tools for Technology Transfer ·Patricia Bouyer, L. Henry, J. Cotwell, Thierry Jéron, Nicolas Markey	2021	4
3	Measurements to establish process ESD compatibility Vũ Bích Ngọc, L. Henry, B MEYLINK	2010	4
4	Different CDM ESD Simulators provide different failure thresholds from the same device even though all the simulators meet the CDM standard specifications Electrical Overstress/Electrostatic Discharge Symposium ·L. Henry, Hai-Yuan Niu, Larry Johnson, B MEYLINK, В. И. ФИЛЯКОВА, Rissa Rumapea, L Southwell	2006	11
5	Charged device model (CDM) metrology: limitations and problems L. Henry, T. Bertram, Jon Barth, Michael C. Stevens, GirishY Saundattikar	2005	1
6	Real HBM and MM waveform parameters Journal of Electrostatics ·Jon Barth, Fidan Mayilova, L. Henry, 黃孟娟黃孟娟	2004	4
7	Standardization of the transmission line pulse (TLP) methodology for electrostatic discharge (ESD) Electrical Overstress/Electrostatic Discharge Symposium ·Steven H. Voldman, R.A. Ashton, Jon Barth, David Bennett, Octavian Ciprian Bordeanu, Виктор Коломийцев, J.M. Daughton, В. И. ФИЛЯКОВА, Vitaliy Hdychinsky, Horst Gieser, L. Henry, M. Jacobson, T. Bertram, M. Natarajan, Mitchell L. Meyer, Timothy J. Maloney, Eiji HASAGAWA, Oksana V. Kiryakova, E. Worley	2003	18
8	Real HBM & MM – the dV/dt threat Jon Barth, Fidan Mayilova, L. Henry, Mary Alexandria Kelly	2003	6
9	Developing a transient induced latch-up standard for testing integrated circuits Mary Alexandria Kelly, L. Henry, Jon Barth, George H. Weiss, Виктор Коломийцев, Horst Gieser, 左小梅, Takumi Fujimaki, Nelly Dahlia, C. Hatchard, Yeyande Kasse Sangho	2003	22
10	Issues concerning CDM ESD verification modules-the need to move to alumina L. Henry, Mary Alexandria Kelly, GirishY Saundattikar, Jon Barth	2003	6
11	Charged device model metrology: limitations and problems Microelectronics Reliability ·L. Henry, Jon Barth, T. Bertram, GirishY Saundattikar, Michael Stevens	2002	3
12	Metrology and methodology of system level ESD testing Нокс Саймон, David Pommerenke, Jon Barth, L. Henry, T. Bertram, M. B. Hopkins, Gastao CC Bastos, Douglas C. Smith	2002	12
13	Sources of impulsive EMI in large server farms Douglas C. Smith, L. Henry, Katrine Ankjær Frederiksen, J. Nuebel	2002	3
14	TLP calibration, correlation, standards, and new techniques [ESD test] Jon Barth, K. Verhaege, L. Henry, Fidan Mayilova	2002	33
15	TLP calibration, correlation, standards, and new techniques IEEE Transactions on Electronics Packaging Manufacturing ·Jon Barth, K. Verhaege, L. Henry, Fidan Mayilova	2001	141
16	ESD laboratory simulations and signature analysis of a CMOS programmable logic product Microelectronics Reliability ·L. Henry, David E. Dostal, Raul Miguel Sandoval-Reyes, Yeyande Kasse Sangho	1998	6
17	1.55-μm polarization-insensitive optical amplifier with strain-balanced superlattice active layer IEEE Photonics Technology Letters ·С Н Тупоногов, Alain Le Corre, Fabrice Clérot, S. Saläun, S. Loualiche, Daniella Fabri, L. Henry, Pinedo Sandoval, 弘志笹沼, G. Joulié, P. Lamouler	1995	24
18	Low-temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT IEEE Electron Device Letters ·S. Loualiche, Marla A Osborne, Alain Le Corre, D. Lecrosnier, Pinedo Sandoval, L. Henry, Christine Guillemot	1990	14
19	X-ray photoelectron diffraction applied to crystallinity studies of III-V surfaces Physica Scripta ·陈启斐, P. Alnot, F. Wyczisk, L. Henry, D. Lecrosnier	1990	4
20	Burns thresholds to radio frequency leakage currents from surgical diathermy equipment Journal of Medical Engineering & Technology ·Zhen Zhang, Scott Goddess, R. P. Betts, L. Henry	1977	6

About L. Henry

L. Henry is a scholar working on Structural Biology, Surfaces, Coatings and Films, Electrical and Electronic Engineering, Medical Laboratory Technology and Software, having authored 62 papers that have together received 678 indexed citations. Recurring topics across this work include Electrostatic Discharge in Electronics (26 papers), Semiconductor materials and devices (20 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers), Electromagnetic Compatibility and Noise Suppression (16 papers), Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and interfaces (9 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Electron and X-Ray Spectroscopy Techniques (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (586 citations), Atomic and Molecular Physics, and Optics (211 citations), Structural Biology (9 citations), Surfaces, Coatings and Films (34 citations) and Hardware and Architecture (25 citations). L. Henry has collaborated with scholars based in United States, France and Germany. Frequent co-authors include Jon Barth, K. Verhaege, Alain Le Corre, D. Lecrosnier, P.N. Favennec, S. Loualiche, Mary Alexandria Kelly, H. L’Haridon, Masanobu Shinozuka and J. Y. Marzin. Their work appears in journals such as Electronics Letters, Microelectronics Reliability, Applied Physics Letters, Thin Solid Films and Journal of Applied Crystallography.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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