H. Naoi

858 total citations
49 papers, 713 citations indexed

About

H. Naoi is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, H. Naoi has authored 49 papers receiving a total of 713 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Condensed Matter Physics, 30 papers in Electronic, Optical and Magnetic Materials and 25 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in H. Naoi's work include GaN-based semiconductor devices and materials (45 papers), Ga2O3 and related materials (30 papers) and Semiconductor Quantum Structures and Devices (25 papers). H. Naoi is often cited by papers focused on GaN-based semiconductor devices and materials (45 papers), Ga2O3 and related materials (30 papers) and Semiconductor Quantum Structures and Devices (25 papers). H. Naoi collaborates with scholars based in Japan, United States and United Kingdom. H. Naoi's co-authors include Yasushi Nanishi, Tsutomu Araki, Daisuke Muto, M. Kurouchi, Yoshiki Naoi, Akira Suzuki, Shiro Sakai, Hideto Miyake, K. Hiramatsu and Tomohiro Yamaguchi and has published in prestigious journals such as Applied Physics Letters, Physical Review B and Japanese Journal of Applied Physics.

In The Last Decade

H. Naoi

47 papers receiving 698 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Naoi Japan 14 627 406 295 284 190 49 713
John F. Kaeding United States 11 608 1.0× 229 0.6× 281 1.0× 240 0.8× 175 0.9× 12 649
Zabu Kyaw Singapore 18 670 1.1× 361 0.9× 336 1.1× 210 0.7× 172 0.9× 23 720
J. I. Hwang Japan 12 514 0.8× 327 0.8× 221 0.7× 398 1.4× 188 1.0× 23 686
Tanya Paskova United States 14 580 0.9× 278 0.7× 189 0.6× 284 1.0× 225 1.2× 25 640
Tsung‐Ting Kao United States 15 552 0.9× 284 0.7× 222 0.8× 237 0.8× 232 1.2× 31 641
S.J. Chang Taiwan 16 612 1.0× 298 0.7× 220 0.7× 342 1.2× 417 2.2× 48 812
A. S. Usikov Russia 13 638 1.0× 359 0.9× 198 0.7× 290 1.0× 319 1.7× 45 737
B. Schineller Germany 14 497 0.8× 233 0.6× 279 0.9× 252 0.9× 307 1.6× 72 640
Jiuru Xu United States 7 753 1.2× 256 0.6× 499 1.7× 324 1.1× 250 1.3× 7 838
M. Zubair Anwar United States 9 567 0.9× 391 1.0× 203 0.7× 220 0.8× 218 1.1× 12 665

Countries citing papers authored by H. Naoi

Since Specialization
Citations

This map shows the geographic impact of H. Naoi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Naoi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Naoi more than expected).

Fields of papers citing papers by H. Naoi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Naoi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Naoi. The network helps show where H. Naoi may publish in the future.

Co-authorship network of co-authors of H. Naoi

This figure shows the co-authorship network connecting the top 25 collaborators of H. Naoi. A scholar is included among the top collaborators of H. Naoi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Naoi. H. Naoi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yamaguchi, Toshiyuki, H. Naoi, Hideaki Araki, et al.. (2020). Fabrication of Cu 2 ZnSn(S, Se) 4 thin-film solar cells by sulfurization using Cu 2 ZnSnSe 4 , NaF and KF compounds. Japanese Journal of Applied Physics. 59(SG). SGGF11–SGGF11. 5 indexed citations
2.
Yamaguchi, Toshiyuki, H. Naoi, Hideaki Araki, et al.. (2019). Fabrication of Cu 2 ZnSn(S,Se) 4 thin-film solar cells by sulfurization using Cu 2 ZnSnSe 4 and KF compounds. Japanese Journal of Applied Physics. 58(SB). SBBF03–SBBF03. 3 indexed citations
3.
Naoi, H., et al.. (2016). Bandgap Energies of Cubic AlxGa1-xNyAs1-y Calculated by Means of the Dielectric Method. MRS Advances. 1(2). 175–180.
4.
Akagi, Takanobu, et al.. (2008). Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence. Journal of Electronic Materials. 37(5). 603–606. 9 indexed citations
5.
Watanabe, S., et al.. (2007). Microstructure of A‐plane InN grown on R‐plane sapphire by ECR‐MBE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 4(7). 2556–2559. 1 indexed citations
6.
Naoi, H., et al.. (2007). Thermal and chemical stabilities of In‐ and N‐polar InN surfaces. physica status solidi (b). 244(6). 1834–1838. 8 indexed citations
7.
Naoi, H., et al.. (2006). Position and Size Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE. IEICE technical report. Speech. 106(269). 117–120.
8.
Muto, Daisuke, et al.. (2006). High‐quality InN grown on KOH wet etched N‐polar InN template by RF‐MBE. physica status solidi (a). 203(7). 1691–1695. 16 indexed citations
9.
Kumagai, Yoshinao, et al.. (2006). A‐plane (11$ \bar 2 $0) InN growth on nitridated R‐plane (10$ \bar 1 $2) sapphire by ECR‐MBE. physica status solidi (b). 243(7). 1468–1471. 26 indexed citations
10.
Kurouchi, M., H. Naoi, Tsutomu Araki, Takao Miyajima, & Yasushi Nanishi. (2005). Fabrication and Characterization of InN-Based Quantum Well Structures Grown by Radio-Frequency Plasma-Assisted Molecular-Beam Epitaxy. Japanese Journal of Applied Physics. 44(1L). L230–L230. 23 indexed citations
11.
Muto, Daisuke, et al.. (2005). Polarity determination of InN by wet etching. physica status solidi (a). 202(5). 773–776. 45 indexed citations
12.
Araki, Tsutomu, et al.. (2005). Growth of polycrystalline InN on silica glass by ECR‐MBE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2316–2319. 6 indexed citations
13.
Naoi, H., et al.. (2005). Correlation among growth conditions, crystal structures and optical properties of InN. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(2). 841–844. 3 indexed citations
14.
Araki, Tsutomu, et al.. (2004). Optical emission spectroscopy during InN growth by ECR–MBE. Journal of Crystal Growth. 275(1-2). e1073–e1077. 2 indexed citations
15.
Kurouchi, M., et al.. (2004). Growth of In-rich InGaN on InN template by radio-frequency plasma assisted molecular beam epitaxy. Journal of Crystal Growth. 275(1-2). e1053–e1058. 11 indexed citations
16.
Nanishi, Yasushi, Yoshiki Saito, Tomohiro Yamaguchi, et al.. (2004). Recent development of InN RF‐MBE growth and its structural and property characterization. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1(6). 1487–1495. 14 indexed citations
17.
Naoi, H., Denis M. Shaw, Yoshiki Naoi, Shiro Sakai, & G. J. Collins. (2003). Growth of InAs on GaAs(100) by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals. Journal of Crystal Growth. 250(3-4). 290–297. 6 indexed citations
18.
Shibata, Tomohiko, et al.. (2003). MOVPE growth and n‐type conductivity control of high‐quality Si‐doped Al 0.5 Ga 0.5 N using epitaxial AlN as an underlying layer. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2128–2131. 1 indexed citations
19.
Yoshikawa, Kenji, et al.. (2002). Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2and N2. Japanese Journal of Applied Physics. 41(Part 1, No. 1). 75–76. 11 indexed citations
20.
Naoi, H., Yoshiki Naoi, & Shiro Sakai. (1997). MOCVD growth of InAsN for infrared applications. Solid-State Electronics. 41(2). 319–321. 56 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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