Yogesh Sharma

842 citations

50 papers · 689 indexed · h-index 14

Co-authors: A. C. Ahyi Tamara Isaacs‐Smith Philip Mawby John R. Williams Yi Xu L. C. Feldman Sarit Dhar Michael R. Jennings
Topics: Silicon Carbide Semiconductor Technologies (42 papers)Semiconductor materials and devices (32 papers)Copper Interconnects and Reliability (14 papers)
Cited by: Electrical and Electronic Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials
Journals: SHILAP Revista de lepidopterologíaApplied Physics Letters Journal of Applied Physics
Partner nations: United Kingdom United States Spain

In The Last Decade

Yogesh Sharma

45 papers receiving 660 citations

Peers

Countries citing papers authored by Yogesh Sharma

Since Specialization

Citations

This map shows the geographic impact of Yogesh Sharma's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yogesh Sharma with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yogesh Sharma more than expected).

Fields of papers citing papers by Yogesh Sharma

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yogesh Sharma. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yogesh Sharma. The network helps show where Yogesh Sharma may publish in the future.

Co-authorship network of co-authors of Yogesh Sharma

This figure shows the co-authorship network connecting the top 25 collaborators of Yogesh Sharma. A scholar is included among the top collaborators of Yogesh Sharma based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yogesh Sharma. Yogesh Sharma is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Estimate of TB incidence and a critical analysis of programmatic data of TB score from Sub national Certification survey of district Niwari, M.P., India 2025 ·Journal of Family Medicine and Primary Care ·(unknown),(unknown),(unknown),(unknown),Yogesh Sharma,(unknown)	0
2	COMPARISON OF RADIOGRAPHIC METHODS (THE GILSANZ AND RATIBIN ATLAS AND TANNER-WHITEHOUSE 2 AND 3) OF BONE AGE ASSESSMENT WITH CHRONOLOGICAL AGE 2023 ·Asian Journal of Pharmaceutical and Clinical Research ·(unknown),Yogesh Sharma,(unknown),(unknown),(unknown)	0
3	Comparison of Hybrid 3.3kV Si-IGBT/SiC-Schottky and 3.3kV Si-IGBT/Si technologies 2018 ·Yogesh Sharma,(unknown),(unknown),(unknown),(unknown),Huaping Jiang,(unknown),(unknown)	1
4	Use of 1.7 kV and 3.3 kV SiC Diodes in Si-IGBT/ SiC Hybrid Technology 2018 ·Journal of the Korean Physical Society ·Yogesh Sharma,(unknown),(unknown),(unknown),(unknown)	1
5	SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications 2017 ·Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Huaping Jiang,Jin Wei,Xiaoping Dai,(unknown),Maolong Ke,Xiaochuan Deng,Yogesh Sharma,(unknown),Philip Mawby	51
6	An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces 2017 ·Materials science forum ·(unknown),Peter Michael Gammon,Yogesh Sharma,(unknown),Philip Mawby	4
7	Physical Characterisation of 3C-SiC(001)/SiO<sub>2</sub> Interface Using XPS 2017 ·Materials science forum ·Fan Li,(unknown),Marc Walker,(unknown),Yogesh Sharma,Stephen Russell,Michael R. Jennings,Amador Pérez‐Tomás,Philip Mawby	1
8	Optimum Design of 4H-SiC Junction Barrier Schottky Diode with Consideration of the Anisotropic Impact Ionization 2016 ·Materials science forum ·(unknown),(unknown),Yogesh Sharma,(unknown),(unknown),(unknown)	1
9	Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface 2015 ·Journal of Applied Physics ·Yi Xu,Can Xu,Gang Liu,(unknown),S. M. Shubeita,(unknown),(unknown),A. C. Ahyi,Yogesh Sharma,A. Wan,John R. Williams,(unknown),Sarit Dhar,Eric Garfunkel,L. C. Feldman	8
10	Degradation and Reliability of Bare Dies Operated up to 300°C 2015 ·Materials science forum ·Dean Hamilton,Michael R. Jennings,Stephen York,(unknown),Yogesh Sharma,Craig A. Fisher,Philip Mawby	2
11	Improved Stability of 4H Sic-MOS Devices after Phosphorous Passivation with Etching Process 2014 ·Yogesh Sharma,Yi Xu,Michael R. Jennings,Craig A. Fisher,Philip Mawby,L. C. Feldman,Jonathan S. Williams	6
12	Roughness of the SiC/SiO2 vicinal interface and atomic structure of the transition layers 2014 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Peizhi Liu,Guoliang Li,Gerd Duscher,Yogesh Sharma,A. C. Ahyi,Tamara Isaacs‐Smith,John R. Williams,Sarit Dhar	14
13	Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors 2014 ·Materials science forum ·S. Thomas,Michael R. Jennings,Yogesh Sharma,Craig A. Fisher,Philip Mawby	17
14	Stable Phosphorus Passivated SiO<sub>2</sub>/4H-SiC Interface Using Thin Oxides 2014 ·Materials science forum ·Yogesh Sharma,A. C. Ahyi,Tamara Isaacs‐Smith,Michael R. Jennings,S. Thomas,Philip Mawby,Sarit Dhar,John R. Williams	1
15	Study of a novel lateral RESURF 3C-SiC on Si Schottky diode 2014 ·(unknown),Yogesh Sharma,Michael R. Jennings,Rong Hua,Craig A. Fisher,Philip Mawby	4
16	High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer 2013 ·IEEE Electron Device Letters ·Yogesh Sharma,A. C. Ahyi,Tamara Isaacs‐Smith,(unknown),(unknown),Yi Xu,Eric Garfunkel,Sarit Dhar,L. C. Feldman,John R. Williams	65
17	Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation 2013 ·IEEE Electron Device Letters ·Gang Liu,A. C. Ahyi,Yi Xu,Tamara Isaacs‐Smith,Yogesh Sharma,Jonathan S. Williams,L. C. Feldman,Sarit Dhar	95
18	Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection 2012 ·Applied Physics Letters ·(unknown),(unknown),(unknown),(unknown),Yogesh Sharma,Moonil Kim,Claude Ahyi,Jing Dai,Jong Wook Hong,Michael J. Bozack,John R. Williams,Ahjeong Son,A. M. Dabiran,Minseo Park	42
19	DNA hybridization sensor based on AlGaN/GaN HEMT 2011 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown),(unknown),(unknown),Yaqi Wang,Yogesh Sharma,(unknown),(unknown),Claude Ahyi,Aleksandr Simonian,Michael J. Bozack,John R. Williams,Minseo Park	5
20	In Situ Temperature Measurement of GaN-Based Ultraviolet Light-Emitting Diodes by Micro-Raman Spectroscopy 2010 ·Journal of Electronic Materials ·Yaqi Wang,Hui Xu,(unknown),Yogesh Sharma,An-Jen Cheng,(unknown),(unknown),Minseo Park,(unknown),(unknown),(unknown),(unknown),K. Das	5

About Yogesh Sharma

Yogesh Sharma is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Condensed Matter Physics, having authored 50 papers that have together received 689 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (42 papers), Semiconductor materials and devices (32 papers) and Copper Interconnects and Reliability (14 papers). The work is most often cited by research in Electrical and Electronic Engineering (624 citations), Condensed Matter Physics (107 citations) and Electronic, Optical and Magnetic Materials (163 citations). Yogesh Sharma has collaborated with scholars based in United Kingdom, United States and Spain. Frequent co-authors include A. C. Ahyi, Tamara Isaacs‐Smith, Philip Mawby, John R. Williams, Yi Xu, L. C. Feldman, Sarit Dhar, Michael R. Jennings, Craig A. Fisher and Gang Liu. Their work appears in journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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