Xiaochuan Deng

1.9k total citations
116 papers, 1.4k citations indexed

About

Xiaochuan Deng is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Xiaochuan Deng has authored 116 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 102 papers in Electrical and Electronic Engineering, 15 papers in Condensed Matter Physics and 12 papers in Materials Chemistry. Recurrent topics in Xiaochuan Deng's work include Silicon Carbide Semiconductor Technologies (87 papers), Semiconductor materials and devices (59 papers) and Advancements in Semiconductor Devices and Circuit Design (36 papers). Xiaochuan Deng is often cited by papers focused on Silicon Carbide Semiconductor Technologies (87 papers), Semiconductor materials and devices (59 papers) and Advancements in Semiconductor Devices and Circuit Design (36 papers). Xiaochuan Deng collaborates with scholars based in China, United States and Australia. Xiaochuan Deng's co-authors include Bo Zhang, Xuan Li, Wanjun Chen, Zhaoji Li, Faying Fan, Xu Li, Yi Wen, Alex Q. Huang, Bo Zhang and Suxuan Guo and has published in prestigious journals such as Journal of Hazardous Materials, Chemical Engineering Journal and IEEE Transactions on Industrial Electronics.

In The Last Decade

Xiaochuan Deng

107 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Xiaochuan Deng China 21 1.2k 187 167 146 104 116 1.4k
J. Kulawik Poland 20 726 0.6× 514 2.7× 23 0.1× 173 1.2× 35 0.3× 86 1.1k
Dexin Yang China 16 575 0.5× 499 2.7× 82 0.5× 127 0.9× 84 0.8× 37 900
M. Dǎnilǎ Romania 14 259 0.2× 316 1.7× 40 0.2× 192 1.3× 80 0.8× 65 630
Iulian Petrila Romania 17 601 0.5× 481 2.6× 21 0.1× 245 1.7× 63 0.6× 45 906
Youdou Zheng China 12 560 0.5× 357 1.9× 52 0.3× 214 1.5× 27 0.3× 29 844
Jiping Zhou China 10 342 0.3× 123 0.7× 55 0.3× 105 0.7× 39 0.4× 24 675
Cell K. Y. Wong Netherlands 11 540 0.5× 327 1.7× 39 0.2× 273 1.9× 45 0.4× 28 798
Florent Yang Germany 15 490 0.4× 614 3.3× 47 0.3× 79 0.5× 41 0.4× 26 964

Countries citing papers authored by Xiaochuan Deng

Since Specialization
Citations

This map shows the geographic impact of Xiaochuan Deng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Xiaochuan Deng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Xiaochuan Deng more than expected).

Fields of papers citing papers by Xiaochuan Deng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Xiaochuan Deng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Xiaochuan Deng. The network helps show where Xiaochuan Deng may publish in the future.

Co-authorship network of co-authors of Xiaochuan Deng

This figure shows the co-authorship network connecting the top 25 collaborators of Xiaochuan Deng. A scholar is included among the top collaborators of Xiaochuan Deng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Xiaochuan Deng. Xiaochuan Deng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
He, Xiaoxiang, Guo‐Wang Xu, Jie Fan, et al.. (2025). One step synthesis of flexible covalent organic Frameworks in water for efficient separation of CO2/CH4. Separation and Purification Technology. 364. 132582–132582.
2.
Li, Jiejie, Xue Wang, Xiaochuan Deng, et al.. (2025). Electron accumulation on oxygen atoms within the oxide layer on the surface of molybdenum carbide enhances electrochemical uranium extraction from seawater. Separation and Purification Technology. 364. 132496–132496. 1 indexed citations
3.
Chen, Wanjun, Fangzhou Wang, Xiaoming Wang, et al.. (2025). First Experimental Demonstration of TiN x O y Resistive Field Plate on p-GaN HEMTs With Simultaneously Enhanced BV and Ron. IEEE Transactions on Electron Devices. 72(8). 4241–4245. 1 indexed citations
4.
Li, Xu, et al.. (2025). Failure Mechanism of 1200-V SiC MOSFET With Embedded Schottky Barrier Diode Under Short-Circuit Condition. IEEE Transactions on Electron Devices. 72(3). 1259–1263. 1 indexed citations
5.
Deng, Xiaochuan, Ruirui Wang, Guowang Xu, et al.. (2024). Preparation of composites of lithium-aluminum layered double hydroxides and biochar and their performance in lithium extraction from aqueous media. Desalination and Water Treatment. 320. 100843–100843.
6.
Zhao, Hanqing, et al.. (2024). Investigation of Inrush Current Induced Trench Gate Degradation Inside SiC Mosfet by New Fowler–Nordheim Localization Methodology. IEEE Transactions on Power Electronics. 39(5). 4947–4951. 2 indexed citations
7.
Deng, Xiaochuan, Xu Li, Xuan Li, et al.. (2024). A SiC Trench Schottky Diode With Accelerated Hole Extraction and Recombination Structure for Enhancing Single-Event Burnout Tolerance. IEEE Transactions on Device and Materials Reliability. 24(4). 549–555. 2 indexed citations
8.
Li, Xuan, Yanning Chen, Wenmin Zhang, et al.. (2024). An In-Depth Investigation Into Short-Circuit Failure Mechanisms of State-of-the-Art 1200 V Double Trench SiC MOSFETs. IEEE Transactions on Power Electronics. 39(12). 15576–15583. 7 indexed citations
9.
Li, Xuan, et al.. (2023). Charge Imbalance Tolerance of 4H-SiC Superjunction Devices Featuring Breakdown Path Variation. IEEE Electron Device Letters. 44(7). 1044–1047. 5 indexed citations
10.
Deng, Xiaochuan, Xu Li, Xuan Li, et al.. (2023). An Adjustable P-Region Potential SiC Trench MOSFET With Improved High-Frequency and Short-Circuit Performance. IEEE Transactions on Electron Devices. 70(12). 6492–6497. 1 indexed citations
11.
Deng, Xiaochuan, et al.. (2023). A Novel SiC Trench MOSFET Embedding Auto-Adjust Source-Potential Region With Switching Oscillation Suppression. IEEE Electron Device Letters. 44(11). 1817–1820. 6 indexed citations
12.
Li, Xuan, Xiaochuan Deng, Wentong Zhang, et al.. (2022). Performance Limit and Design Guideline of 4H-SiC Superjunction Devices Considering Anisotropy of Impact Ionization. IEEE Electron Device Letters. 43(12). 2025–2028. 7 indexed citations
13.
Chen, Wanjun, Ruize Sun, Fangzhou Wang, et al.. (2022). Experimental Demonstration of an Integrated Bidirectional Gate ESD Protection Structure for p-GaN Power HEMTs. IEEE Electron Device Letters. 44(2). 209–212. 6 indexed citations
14.
Zhang, Jinping, et al.. (2021). Injection enhanced SiC planar gate IGBT with partial Schottky contact emitter. Materials Science in Semiconductor Processing. 134. 106026–106026. 3 indexed citations
15.
Zhang, Jinping, et al.. (2021). A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode. IEEE Journal of the Electron Devices Society. 9. 713–721. 20 indexed citations
16.
Chen, Wanjun, Qijun Zhou, Yun Xia, et al.. (2020). Non-Simultaneous Triggering Induced Failure of CS-MCT Under Repetitive High-Current Pulse Condition. IEEE Transactions on Device and Materials Reliability. 20(1). 214–220. 4 indexed citations
17.
Deng, Xiaochuan, Xu Li, Xuan Li, et al.. (2020). Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs. IEEE Transactions on Power Electronics. 36(7). 8300–8307. 43 indexed citations
18.
Chen, Hang, Juntao Li, Wen Wang, et al.. (2019). Silicon carbide bipolar junction transistor with novel emitter field plate design for high current gain and reliability. Semiconductor Science and Technology. 34(4). 45001–45001. 2 indexed citations
19.
Chen, Wanjun, Ruize Sun, Chao Liu, et al.. (2019). Analytical Switching Loss Model for GaN-Based Control Switch and Synchronous Rectifier in Low-Voltage Buck Converters. IEEE Journal of Emerging and Selected Topics in Power Electronics. 7(3). 1485–1495. 30 indexed citations
20.
Jiang, Huaping, Jin Wei, Xiaoping Dai, et al.. (2017). SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 49–52. 51 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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