G. Polisski

1.8k total citations
48 papers, 1.5k citations indexed

About

G. Polisski is a scholar working on Materials Chemistry, Biomedical Engineering and Electrical and Electronic Engineering. According to data from OpenAlex, G. Polisski has authored 48 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Materials Chemistry, 36 papers in Biomedical Engineering and 35 papers in Electrical and Electronic Engineering. Recurrent topics in G. Polisski's work include Silicon Nanostructures and Photoluminescence (43 papers), Nanowire Synthesis and Applications (35 papers) and Semiconductor materials and devices (17 papers). G. Polisski is often cited by papers focused on Silicon Nanostructures and Photoluminescence (43 papers), Nanowire Synthesis and Applications (35 papers) and Semiconductor materials and devices (17 papers). G. Polisski collaborates with scholars based in Germany, Russia and United States. G. Polisski's co-authors include H. Heckler, F. Koch, D. Kovalev, Dmitry Kovalev, F. Koch, J. Diener, M. Ben‐Chorin, N. Künzner, M. Schwartzkopff and V. Yu. Timoshenko and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

G. Polisski

42 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G. Polisski Germany	16	1.3k	949	913	307	80	48	1.5k
C. Pickering United Kingdom	16	1.0k 0.8×	764 0.8×	1.0k 1.1×	257 0.8×	110 1.4×	40	1.3k
Hideki Koyama Japan	22	1.8k 1.4×	1.5k 1.6×	1.5k 1.7×	238 0.8×	52 0.7×	52	1.9k
Aaron C. Hryciw Canada	16	516 0.4×	337 0.4×	708 0.8×	499 1.6×	30 0.4×	33	979
P. Mur France	17	499 0.4×	254 0.3×	727 0.8×	215 0.7×	54 0.7×	53	890
H. Münder Germany	19	976 0.7×	733 0.8×	866 0.9×	291 0.9×	29 0.4×	41	1.2k
J. S. Fu China	11	362 0.3×	521 0.5×	294 0.3×	249 0.8×	44 0.6×	19	764
Maoqing Yao United States	13	310 0.2×	583 0.6×	563 0.6×	311 1.0×	41 0.5×	19	836
J. M. Macaulay United States	11	878 0.7×	500 0.5×	663 0.7×	161 0.5×	125 1.6×	21	995
J. P. Nys France	22	547 0.4×	573 0.6×	757 0.8×	779 2.5×	59 0.7×	57	1.3k
E. Minoux France	12	845 0.6×	342 0.4×	374 0.4×	260 0.8×	70 0.9×	19	1.1k

Countries citing papers authored by G. Polisski

Since Specialization

Citations

This map shows the geographic impact of G. Polisski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Polisski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Polisski more than expected).

Fields of papers citing papers by G. Polisski

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Polisski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Polisski. The network helps show where G. Polisski may publish in the future.

Co-authorship network of co-authors of G. Polisski

This figure shows the co-authorship network connecting the top 25 collaborators of G. Polisski. A scholar is included among the top collaborators of G. Polisski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Polisski. G. Polisski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Karhu, Robin, G. Polisski, Marshall Wilson, et al.. (2025). Non-Contact Full Wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 376. 63–69.

Thörnberg, Jimmy, et al.. (2024). Epitaxial Defectivity Characterization Combining Surface Voltage and Photoluminescence Mapping on 200mm 4H-SiC Wafers. Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum. 434. 111–115.

Gross, E. F., D. Kovalev, N. Künzner, et al.. (2003). Efficient light scattering by a liquid network confined in a porous matrix. physica status solidi (a). 197(2). 572–576. 1 indexed citations

Polisski, G., et al.. (2002). Improved performance of thin-film silicon solar cells on graphite substrates. 739–742. 5 indexed citations

Diener, J., D. Kovalev, G. Polisski, & F. Koch. (2001). Polarization properties of the luminescence from silicon nanocrystals. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4355. 137–137.

Diener, J., D. Kovalev, H. Heckler, et al.. (2001). Strong low-temperature anti-Stokes photoluminescence from coupled silicon nanocrystals. Optical Materials. 17(1-2). 135–139. 12 indexed citations

Kovalev, Dmitry, G. Polisski, J. Diener, et al.. (2001). Strong in-plane birefringence of spatially nanostructured silicon. Applied Physics Letters. 78(7). 916–918. 69 indexed citations

Kovalev, D., H. Heckler, J. Diener, et al.. (2001). Efficient Photoluminescence Upconversion in Porous Si. physica status solidi (b). 224(1). 21–23. 4 indexed citations

Diener, J., N. Künzner, D. Kovalev, et al.. (2001). Dichroic Bragg reflectors based on birefringent porous silicon. Applied Physics Letters. 78(24). 3887–3889. 45 indexed citations

10.

Diener, J., D. Kovalev, G. Polisski, & F. Koch. (2000). Dielectric Effects in the Photoluminescence from Porous Silicon. physica status solidi (a). 182(1). 341–345.

11.

Diener, J., D. Kovalev, G. Polisski, & F. Koch. (2000). Dielectric Effects in the Photoluminescence from Porous Silicon. physica status solidi (a). 182(1). 341–345.

12.

Diener, J., D. Kovalev, G. Polisski, H. Heckler, & F. Koch. (1999). The Recombination Statistics of Excitons in Silicon Nanocrystals. physica status solidi (b). 214(1). 1 indexed citations

13.

Polisski, G., D. Kovalev, G. Dollinger, T. Sulima, & F. Koch. (1999). Boron in mesoporous Si — Where have all the carriers gone?. Physica B Condensed Matter. 273-274. 951–954. 56 indexed citations

14.

Kovalev, D., H. Heckler, M. Ben‐Chorin, et al.. (1998). Breakdown of thek-Conservation Rule in Si Nanocrystals. Physical Review Letters. 81(13). 2803–2806. 215 indexed citations

15.

Lebedev, É. A., et al.. (1998). Drift mobility of excess carriers in porous silicon. Physical review. B, Condensed matter. 57(23). 14607–14610. 16 indexed citations

16.

Andrianov, A. V., et al.. (1998). Inelastic light scattering and X-ray diffraction from thick free-standing porous silicon films. Journal of Luminescence. 80(1-4). 193–198. 4 indexed citations

17.

Koch, F., Dmitry Kovalev, G. Polisski, & A. V. Andrianov. (1996). Light - stimulated anisotropy in porous silicon. Brazilian Journal of Physics. 26(1). 189–192. 4 indexed citations

18.

Kovalev, D., G. Polisski, M. Ben‐Chorin, J. Diener, & F. Koch. (1996). The temperature dependence of the absorption coefficient of porous silicon. Journal of Applied Physics. 80(10). 5978–5983. 92 indexed citations

19.

Ben‐Chorin, M., B. Averboukh, Dmitry Kovalev, G. Polisski, & F. Koch. (1996). Influence of Quantum Confinement on the Critical Points of the Band Structure of Si. Physical Review Letters. 77(4). 763–766. 45 indexed citations

20.

Petrova-Koch, V., T. Muschik, G. Polisski, & D. Kovalev. (1994). The Visible and the Infrared Luminescence Bands as a Tool for Characterization of the Porous Silicon Bandstructure. MRS Proceedings. 358. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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