A. F. Witt

1.9k total citations
69 papers, 1.4k citations indexed

About

A. F. Witt is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, A. F. Witt has authored 69 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Materials Chemistry, 32 papers in Electrical and Electronic Engineering and 24 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in A. F. Witt's work include Solidification and crystal growth phenomena (29 papers), Semiconductor Quantum Structures and Devices (15 papers) and Advanced Semiconductor Detectors and Materials (10 papers). A. F. Witt is often cited by papers focused on Solidification and crystal growth phenomena (29 papers), Semiconductor Quantum Structures and Devices (15 papers) and Advanced Semiconductor Detectors and Materials (10 papers). A. F. Witt collaborates with scholars based in United States, Japan and Germany. A. F. Witt's co-authors include H. C. Gatos, M. Lichtensteiger, Tadeusz Jasiński, Calvin Herman, Kenji Morizane, D.J. Carlson, L. Jastrzȩbski, Joel M. Harris, Michael J. Wargo and M. C. Lavine and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

A. F. Witt

65 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. F. Witt United States 23 1.0k 571 368 337 236 69 1.4k
F. R. Szofran United States 18 558 0.6× 464 0.8× 249 0.7× 223 0.7× 147 0.6× 72 922
Thierry Duffar France 20 1.0k 1.0× 621 1.1× 388 1.1× 268 0.8× 202 0.9× 124 1.5k
A. Cröll Germany 18 844 0.8× 389 0.7× 282 0.8× 121 0.4× 140 0.6× 71 1.2k
T. Soma Japan 18 722 0.7× 294 0.5× 562 1.5× 433 1.3× 52 0.2× 144 1.2k
R T Delves United Kingdom 16 543 0.5× 167 0.3× 144 0.4× 278 0.8× 173 0.7× 27 890
J.L. Bocquet France 18 890 0.9× 117 0.2× 321 0.9× 153 0.5× 64 0.3× 44 1.1k
A. Yu. Kuksin Russia 22 1.0k 1.0× 192 0.3× 342 0.9× 155 0.5× 117 0.5× 51 1.4k
V. K. Tewary United States 22 732 0.7× 365 0.6× 246 0.7× 437 1.3× 34 0.1× 98 1.6k
Masashi Kumagawa Japan 16 498 0.5× 551 1.0× 93 0.3× 412 1.2× 73 0.3× 100 936
Yuko Inatomi Japan 15 557 0.6× 264 0.5× 162 0.4× 119 0.4× 118 0.5× 109 793

Countries citing papers authored by A. F. Witt

Since Specialization
Citations

This map shows the geographic impact of A. F. Witt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. F. Witt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. F. Witt more than expected).

Fields of papers citing papers by A. F. Witt

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. F. Witt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. F. Witt. The network helps show where A. F. Witt may publish in the future.

Co-authorship network of co-authors of A. F. Witt

This figure shows the co-authorship network connecting the top 25 collaborators of A. F. Witt. A scholar is included among the top collaborators of A. F. Witt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. F. Witt. A. F. Witt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Witt, A. F., et al.. (2022). Extreme wave excitation from localized phase-shift perturbations. Physical review. E. 106(4). L043101–L043101. 4 indexed citations
2.
Becla, P., A. F. Witt, J. Łagowski, & W. Walukiewicz. (1995). Large photoinduced persistent optical absorption in selenium doped AlSb. Applied Physics Letters. 67(3). 395–397. 12 indexed citations
3.
Lin, Chao‐An & A. F. Witt. (1994). Decoration of dislocations in Bi12SiO20 crystals by annealing in a reducing atmosphere. Journal of Crystal Growth. 140(3-4). 444–446. 2 indexed citations
4.
Witt, A. F., et al.. (1991). Identification of dislocation etch pits in n-type GaAs by NIR transmission microscopy. Journal of Crystal Growth. 114(1-2). 255–257. 2 indexed citations
5.
Iyechika, Yasushi, et al.. (1989). Optical Bistability In Evaporated Thin Films Of CDs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 963. 103–103. 5 indexed citations
6.
Carlson, D.J. & A. F. Witt. (1988). Determination of free charge carrier distribution and micro-segregation of dopants in n-type GaAs. Journal of Crystal Growth. 91(1-2). 239–243. 10 indexed citations
7.
Bourret, Edith, Jeffrey J. Derby, Robert A. Brown, & A. F. Witt. (1984). Segregation effects during growth of pseudo-binary systems with large liquidus-solidus separation. Acta Astronautica. 11(3-4). 163–171. 4 indexed citations
8.
Bourret, Edith, J.J. Favier, & A. F. Witt. (1983). Segregation during directional melting and its implications on seeded crystal growth: A theoretical analysis. Journal of Crystal Growth. 61(3). 681–688. 3 indexed citations
9.
Jasiński, Tadeusz, W. M. Rohsenow, & A. F. Witt. (1983). Heat transfer analysis of the Bridgman-Stockbarger configuration for crystal growth. Journal of Crystal Growth. 61(2). 339–354. 62 indexed citations
10.
McClelland, R.W., et al.. (1981). Preparation of Oriented GaAs Bicrystal Layers by Vapor-Phase Epitaxy Using Lateral Overgrowth. MRS Proceedings. 5. 3 indexed citations
11.
Gatos, H. C. & A. F. Witt. (1978). Solidification (crystal growth) in the presence of gravitational forces. NASA Technical Reports Server (NASA). 1 indexed citations
12.
Jastrzȩbski, L., H. C. Gatos, & A. F. Witt. (1977). Current‐Induced Solution Growth of Garnet Layers. Journal of The Electrochemical Society. 124(4). 633–634. 15 indexed citations
13.
Witt, A. F., H. C. Gatos, M. Lichtensteiger, M. C. Lavine, & Calvin Herman. (1975). Crystal Growth and Steady‐State Segregation under Zero Gravity: InSb. Journal of The Electrochemical Society. 122(2). 276–283. 116 indexed citations
14.
Witt, A. F., et al.. (1975). Interface Demarcation during LPE Growth of GaAs. Journal of The Electrochemical Society. 122(11). 1541–1544. 7 indexed citations
15.
Wessels, Bruce W., H. C. Gatos, & A. F. Witt. (1974). EPITAXIAL GROWTH OF SILICON CARBIDE BY CHEMICAL VAPOR DEPOSITION.. 25–32. 2 indexed citations
16.
Kumagawa, Masashi, A. F. Witt, M. Lichtensteiger, & H. C. Gatos. (1973). Current-Controlled Growth and Dopant Modulation in Liquid Phase Epitaxy. Journal of The Electrochemical Society. 120(4). 583–583. 52 indexed citations
17.
Witt, A. F., et al.. (1971). A crystal growth method based on controlled power reduction under stabilising thermal gradients. Journal of Materials Science. 6(7). 1036–1037. 3 indexed citations
18.
Harris, Joel M., H. C. Gatos, & A. F. Witt. (1971). Growth Characteristics of Alpha-Silicon Carbide. Journal of The Electrochemical Society. 118(2). 338–338. 12 indexed citations
19.
Harris, Joel M., H. C. Gatos, & A. F. Witt. (1971). Growth Characteristics of Alpha-Silicon Carbide. Journal of The Electrochemical Society. 118(2). 335–335. 25 indexed citations
20.
Witt, A. F., Calvin Herman, & H. C. Gatos. (1970). Czochralski-type crystal growth in transverse magnetic fields. Journal of Materials Science. 5(9). 822–824. 65 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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