Robin Karhu

470 total citations
17 papers, 340 citations indexed

About

Robin Karhu is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Robin Karhu has authored 17 papers receiving a total of 340 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 9 papers in Electronic, Optical and Magnetic Materials and 3 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Robin Karhu's work include Silicon Carbide Semiconductor Technologies (16 papers), Semiconductor materials and devices (12 papers) and Copper Interconnects and Reliability (9 papers). Robin Karhu is often cited by papers focused on Silicon Carbide Semiconductor Technologies (16 papers), Semiconductor materials and devices (12 papers) and Copper Interconnects and Reliability (9 papers). Robin Karhu collaborates with scholars based in Sweden, Iceland and Germany. Robin Karhu's co-authors include Jawad Ul‐Hassan, E.Ö. Sveinbjörnsson, Ivan G. Ivanov, Jörg Wrachtrup, Öney O. Soykal, Cristian Bonato, Florian Kaiser, Matthias Niethammer, Niklas Rorsman and Rabia Yasmin Khosa and has published in prestigious journals such as Nature Communications, Journal of Applied Physics and Crystal Growth & Design.

In The Last Decade

Robin Karhu

16 papers receiving 337 citations

Peers

Countries citing papers authored by Robin Karhu

Since Specialization

Citations

This map shows the geographic impact of Robin Karhu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Robin Karhu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Robin Karhu more than expected).

Fields of papers citing papers by Robin Karhu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Robin Karhu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Robin Karhu. The network helps show where Robin Karhu may publish in the future.

Co-authorship network of co-authors of Robin Karhu

This figure shows the co-authorship network connecting the top 25 collaborators of Robin Karhu. A scholar is included among the top collaborators of Robin Karhu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Robin Karhu. Robin Karhu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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17 of 17 papers shown

#	Work	Indexed citations
1	Non-Contact Full Wafer Imaging of Electrically Active Defects in 4H-SiC Epi with Comparison to End of Line Electrical Device Data 2025 ·Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·(unknown), (unknown), Robin Karhu, (unknown), G. Polisski, Marshall Wilson, (unknown), (unknown), Carlos Almeida, Dmitriy Marinskiy, J. Łagowski	0
2	The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers 2022 ·physica status solidi (b) ·Robin Karhu, (unknown), Jawad Ul‐Hassan	1
3	The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers 2022 ·physica status solidi (b) ·Robin Karhu, (unknown), Jawad Ul‐Hassan	2
4	Modelling the static on-state current voltage characteristics for a 10 kV 4H–SiC PiN diode 2020 ·Materials Science in Semiconductor Processing ·Kai Tian, (unknown), (unknown), Adolf Schöner, (unknown), Robin Karhu, Jawad Ul‐Hassan, Anders Hallén	9
5	Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations 2019 ·Crystal Growth & Design ·Jawad Ul‐Hassan, Robin Karhu, (unknown), Erik Janzén	10
6	High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide 2019 ·Nature Communications ·Roland Nagy, Matthias Niethammer, Matthias Widmann, Y.-C. Chen, Péter Udvarhelyi, Cristian Bonato, Jawad Ul‐Hassan, Robin Karhu, Ivan G. Ivanov, Nguyên Tiên Són, J. R. Maze, Takeshi Ohshima, Öney O. Soykal, Ádám Gali, Sang‐Yun Lee, Florian Kaiser, Jörg Wrachtrup	186
7	CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers 2019 ·Journal of Applied Physics ·Robin Karhu, E.Ö. Sveinbjörnsson, Björn Magnusson, Ivan G. Ivanov, Örjan Danielsson, Jawad Ul‐Hassan	11
8	Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC 2019 ·Materials science forum ·Rabia Yasmin Khosa, (unknown), (unknown), Robin Karhu, Jawad Ul‐Hassan, Niklas Rorsman, E.Ö. Sveinbjörnsson	1
9	CVD growth of SiC for high-power and high-frequency applications 2019 ·Linköping studies in science and technology. Dissertations ·Robin Karhu	1
10	Electrical characterization of high k-dielectrics for 4H-SiC MIS devices 2019 ·Materials Science in Semiconductor Processing ·Rabia Yasmin Khosa, Jr‐Tai Chen, M. Winters, (unknown), Robin Karhu, Jawad Ul‐Hassan, Niklas Rorsman, E.Ö. Sveinbjörnsson	12
11	Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC 2018 ·AIP Advances ·Rabia Yasmin Khosa, (unknown), M. Winters, Niklas Rorsman, Robin Karhu, Jawad Ul‐Hassan, E.Ö. Sveinbjörnsson	49
12	Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD 2018 ·Solid-State Electronics ·Rabia Yasmin Khosa, (unknown), (unknown), Robin Karhu, Jawad Ul‐Hassan, Niklas Rorsman, E.Ö. Sveinbjörnsson	14
13	Low Density of Near-Interface Traps at the Al<sub>2</sub>O<sub>3</sub>/4H-SiC Interface with Al<sub>2</sub>O<sub>3</sub> Made by Low Temperature Oxidation of Al 2017 ·Materials science forum ·Rabia Yasmin Khosa, E.Ö. Sveinbjörnsson, M. Winters, Jawad Ul‐Hassan, Robin Karhu, Erik Janzén, Niklas Rorsman	4
14	Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry 2017 ·Physica B Condensed Matter ·(unknown), Ian D. Booker, Robin Karhu, Henrik Pedersen, Erik Janzén, Ivan G. Ivanov	5
15	Oxidation-Induced Deep Levels inn- andp-Type4H- and6H-SiC and Their Influence on Carrier Lifetime 2016 ·Physical Review Applied ·Ian D. Booker, Hassan Abdalla, Jawad Ul‐Hassan, Robin Karhu, (unknown), Erik Janzén, E.Ö. Sveinbjörnsson	13
16	The Role of Chlorine during High Growth Rate Epitaxy 2015 ·Materials science forum ·Robin Karhu, Ian D. Booker, Jawad Ul‐Hassan, Ivan G. Ivanov, Erik Janzén	4
17	Carrier Lifetime Controlling Defects Z_1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC 2014 ·Crystal Growth & Design ·Ian D. Booker, Jawad Ul‐Hassan, (unknown), Franziska C. Beyer, Robin Karhu, J. P. Bergman, Örjan Danielsson, Olof Kordina, E.Ö. Sveinbjörnsson, Erik Janzén	18

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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