Gerald Rescher

753 total citations
20 papers, 564 citations indexed

About

Gerald Rescher is a scholar working on Electrical and Electronic Engineering, Infectious Diseases and Organic Chemistry. According to data from OpenAlex, Gerald Rescher has authored 20 papers receiving a total of 564 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 0 papers in Infectious Diseases and 0 papers in Organic Chemistry. Recurrent topics in Gerald Rescher's work include Semiconductor materials and devices (20 papers), Silicon Carbide Semiconductor Technologies (20 papers) and Advancements in Semiconductor Devices and Circuit Design (19 papers). Gerald Rescher is often cited by papers focused on Semiconductor materials and devices (20 papers), Silicon Carbide Semiconductor Technologies (20 papers) and Advancements in Semiconductor Devices and Circuit Design (19 papers). Gerald Rescher collaborates with scholars based in Austria, Germany and Canada. Gerald Rescher's co-authors include Thomas Aichinger, Gregor Pobegen, Tibor Grasser, H. Reisinger, Maximilian W. Feil, Thomas Basler, Dethard Peters, Katja Puschkarsky, Christian Schleich and Wolfgang Gustin and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Microelectronics Reliability.

In The Last Decade

Gerald Rescher

20 papers receiving 549 citations

Peers

Countries citing papers authored by Gerald Rescher

Since Specialization

Citations

This map shows the geographic impact of Gerald Rescher's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Gerald Rescher with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Gerald Rescher more than expected).

Fields of papers citing papers by Gerald Rescher

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Gerald Rescher. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Gerald Rescher. The network helps show where Gerald Rescher may publish in the future.

Co-authorship network of co-authors of Gerald Rescher

This figure shows the co-authorship network connecting the top 25 collaborators of Gerald Rescher. A scholar is included among the top collaborators of Gerald Rescher based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Gerald Rescher. Gerald Rescher is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Gate Switching Instability in Silicon Carbide MOSFETs—Part I: Experimental 2024 ·IEEE Transactions on Electron Devices ·Maximilian W. Feil, (unknown), H. Reisinger, (unknown), Thomas Aichinger, (unknown), Gregor Pobegen, (unknown), Gerald Rescher, Dominic Waldhoer, (unknown), Wolfgang Gustin, Michael Waltl, Tibor Grasser	6
2	Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs 2023 ·Maximilian W. Feil, (unknown), H. Reisinger, (unknown), Thomas Aichinger, (unknown), Gerald Rescher, Wolfgang Gustin, Tibor Grasser	20
3	On the Frequency Dependence of the Gate Switching Instability in Silicon Carbide MOSFETs 2023 ·Materials science forum ·Maximilian W. Feil, (unknown), H. Reisinger, (unknown), Gerald Rescher, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser	10
4	Recent Developments in Understanding the Gate Switching Instability in Silicon Carbide MOSFETs 2023 ·Maximilian W. Feil, (unknown), H. Reisinger, (unknown), Thomas Aichinger, (unknown), Gregor Pobegen, (unknown), Gerald Rescher, Wolfgang Gustin, Tibor Grasser	2
5	Gate-switching-stress test: Electrical parameter stability of SiC MOSFETs in switching operation 2022 ·Microelectronics Reliability ·(unknown), Maximilian W. Feil, (unknown), H. Reisinger, Gerald Rescher, (unknown), (unknown), Thomas Aichinger	28
6	A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation 2021 ·(unknown), Maximilian W. Feil, (unknown), H. Reisinger, Gerald Rescher, Thomas Aichinger	25
7	Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs 2020 ·S.A. Maas, H. Reisinger, Thomas Aichinger, Gerald Rescher	16
8	Similarities and Differences of BTI in SiC and Si Power MOSFETs 2020 ·(unknown), (unknown), Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser	14
9	Cryogenic Characterization of NH<sub>3</sub> Post Oxidation Annealed 4H-SiC Trench MOSFETs 2019 ·Materials science forum ·(unknown), Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Tibor Grasser	1
10	Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs 2019 ·Christian Schleich, (unknown), G. Rzepa, Gregor Pobegen, Gerald Rescher, Stanislav Tyaginov, Tibor Grasser, Michael Waltl	23
11	On the origin of drain current transients and subthreshold sweep hysteresis in 4H-SiC MOSFETs 2019 ·Applied Physics Letters ·(unknown), (unknown), Gerald Rescher, Thomas Aichinger, Heiko B. Weber, M. Krieger, Gregor Pobegen	2
12	NH₃and NO + NH₃Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability 2019 ·IEEE Transactions on Electron Devices ·(unknown), Gregor Pobegen, Gerald Rescher, Thomas Aichinger, Tibor Grasser	14
13	Investigation of threshold voltage stability of SiC MOSFETs 2018 ·Dethard Peters, Thomas Aichinger, Thomas Basler, Gerald Rescher, Katja Puschkarsky, H. Reisinger	70
14	Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning 2018 ·Materials science forum ·Gerald Rescher, Gregor Pobegen, Thomas Aichinger, Tibor Grasser	5
15	Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique 2018 ·IEEE Transactions on Electron Devices ·Gerald Rescher, Gregor Pobegen, Thomas Aichinger, Tibor Grasser	39
16	Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique 2017 ·Materials science forum ·Gerald Rescher, Gregor Pobegen, Thomas Aichinger, Tibor Grasser	4
17	Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs 2017 ·Microelectronics Reliability ·Thomas Aichinger, Gerald Rescher, Gregor Pobegen	200
18	Threshold Voltage Instabilities of Present SiC-Power MOSFETs under Positive Bias Temperature Stress 2016 ·Materials science forum ·Gerald Rescher, Gregor Pobegen, Tibor Grasser	27
19	On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs 2016 ·Gerald Rescher, Gregor Pobegen, Thomas Aichinger, Tibor Grasser	56
20	Impact of Nitric Oxide Post Oxidation Anneal on the Bias Temperature Instability and the On-Resistance of 4H-SiC nMOSFETs 2015 ·Materials science forum ·Gerald Rescher, Gregor Pobegen, Thomas Aichinger	2

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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