C. H. Björkman

766 total citations
27 papers, 630 citations indexed

About

C. H. Björkman is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, C. H. Björkman has authored 27 papers receiving a total of 630 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in C. H. Björkman's work include Semiconductor materials and devices (19 papers), Silicon Nanostructures and Photoluminescence (13 papers) and Thin-Film Transistor Technologies (9 papers). C. H. Björkman is often cited by papers focused on Semiconductor materials and devices (19 papers), Silicon Nanostructures and Photoluminescence (13 papers) and Thin-Film Transistor Technologies (9 papers). C. H. Björkman collaborates with scholars based in United States, Germany and Japan. C. H. Björkman's co-authors include G. Lucovsky, J. T. Fitch, G. Lucovsky, Fred H. Pollak, Xiaobo Yin, Tetsuji Yasuda, C. Meyer, U. Emmerichs, H. Kurz and T. Yamazaki and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

C. H. Björkman

25 papers receiving 595 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. H. Björkman United States 13 454 284 268 79 49 27 630
J. G. Mihaychuk Canada 9 217 0.5× 193 0.7× 230 0.9× 73 0.9× 54 1.1× 12 413
Ken-ichi Muta Japan 11 326 0.7× 314 1.1× 201 0.8× 98 1.2× 58 1.2× 26 659
C. Grivas United Kingdom 20 834 1.8× 303 1.1× 563 2.1× 155 2.0× 122 2.5× 47 1.0k
X. Hu United States 9 185 0.4× 171 0.6× 281 1.0× 42 0.5× 65 1.3× 31 413
Taibun Kamejima Japan 20 788 1.7× 159 0.6× 675 2.5× 101 1.3× 43 0.9× 35 961
G. J. Gerardi United States 14 936 2.1× 488 1.7× 327 1.2× 42 0.5× 112 2.3× 31 1.1k
F. Ferrieu France 14 314 0.7× 228 0.8× 156 0.6× 75 0.9× 124 2.5× 42 485
L. Ledebo Sweden 14 538 1.2× 190 0.7× 507 1.9× 41 0.5× 26 0.5× 22 700
М. К. Шейнкман Ukraine 12 336 0.7× 353 1.2× 182 0.7× 39 0.5× 104 2.1× 70 531
Y. S. Park United States 16 514 1.1× 418 1.5× 396 1.5× 86 1.1× 74 1.5× 33 769

Countries citing papers authored by C. H. Björkman

Since Specialization
Citations

This map shows the geographic impact of C. H. Björkman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. H. Björkman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. H. Björkman more than expected).

Fields of papers citing papers by C. H. Björkman

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. H. Björkman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. H. Björkman. The network helps show where C. H. Björkman may publish in the future.

Co-authorship network of co-authors of C. H. Björkman

This figure shows the co-authorship network connecting the top 25 collaborators of C. H. Björkman. A scholar is included among the top collaborators of C. H. Björkman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. H. Björkman. C. H. Björkman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lüpke, G., Franz-Erich Wolter, U. Emmerichs, et al.. (2002). Thermally induced stress relaxation of silicon dioxide on vicinal Si(111) studied with surface nonlinear-optical techniques. 89–91. 1 indexed citations
2.
Björkman, C. H., et al.. (1998). Magnetic field optimization in a dielectric magnetically enhanced reactive ion etch reactor to produce an instantaneously uniform plasma. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(3). 1600–1603. 25 indexed citations
3.
Alay, J. L., et al.. (1995). Determination of Valence Band Alignment at Ultrathin SiO2/Si Interfaces by High-Resolution X-Ray Photoelectron Spectroscopy. Japanese Journal of Applied Physics. 34(6A). L653–L653. 23 indexed citations
4.
Björkman, C. H., Híromichi Nishimura, Tsutomu Yamazaki, et al.. (1995). Chemical Stability of SC1-Cleaned Hydrogen Terminated Si(100) Surfaces. MRS Proceedings. 386. 1 indexed citations
5.
Björkman, C. H., J. L. Alay, Híromichi Nishimura, et al.. (1995). Core-level shifts of silicon–hydrogen species on chemically treated Si surfaces studied by high-resolution x-ray photoelectron spectroscopy. Applied Physics Letters. 67(14). 2049–2051. 15 indexed citations
6.
Björkman, C. H., M. Fukuda, T. Yamazaki, Seiichi Miyazaki, & Masataka Hirose. (1995). Atomic Scale Morphology of Hydrogen-Terminated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies. Japanese Journal of Applied Physics. 34(2S). 722–722. 27 indexed citations
7.
Björkman, C. H., T. Yamazaki, Seiichi Miyazaki, & M. Hirose. (1995). Analysis of infrared attenuated total reflection spectra from thin SiO2 films on Si. Journal of Applied Physics. 77(1). 313–317. 14 indexed citations
8.
Emmerichs, U., C. Meyer, Huib J. Bakker, et al.. (1994). Second-harmonic response of chemically modified vicinal Si(111) surfaces. Physical review. B, Condensed matter. 50(8). 5506–5511. 20 indexed citations
9.
Yamazaki, T., Seiichi Miyazaki, C. H. Björkman, M. Fukuda, & M. Hirose. (1993). Infrared Spectra of Ultra-Thin SiO2 Grown on Si Surfaces. MRS Proceedings. 318. 12 indexed citations
10.
Lucovsky, G., C. H. Björkman, Tetsuji Yasuda, et al.. (1993). Thermal Relaxation Phenomena in the Formation of Device-Quality SiO2/Si Interfaces. Japanese Journal of Applied Physics. 32(12S). 6196–6196. 5 indexed citations
11.
Yasuda, Tetsuji, C. H. Björkman, Y. Ma, et al.. (1993). A Low-Temperature Process for Device Quality Si/SiO2 Interfaces On Si(111). MRS Proceedings. 315(1). 375–380. 2 indexed citations
12.
Björkman, C. H., Yuncan Ma, Tetsuji Yasuda, et al.. (1993). Second-harmonic generation in Si–SiO2 heterostructures formed by chemical, thermal, and plasma-assisted oxidation and deposition processes. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 11(4). 964–970. 33 indexed citations
13.
Emmerichs, U., C. Meyer, Karl Leo, et al.. (1992). Chemically Modified Second Harmonic Generation at Surfaces on Vicinal Si(111) Wafers. MRS Proceedings. 281. 2 indexed citations
14.
Björkman, C. H., et al.. (1991). Studies of MOS and Heterojunction Devices Using Doped μc-Si and a-Si. MRS Proceedings. 219. 1 indexed citations
15.
Björkman, C. H., et al.. (1991). Effective electron affinities in doped a-Si:H and μc-Si films as determined from studies of MOS capacitors. Journal of Non-Crystalline Solids. 137-138. 1059–1062. 1 indexed citations
16.
Björkman, C. H., J. T. Fitch, & G. Lucovsky. (1990). Correlation between midgap interface state density and thickness-averaged oxide stress and strain at Si/SiO2 interfaces formed by thermal oxidation of Si. Applied Physics Letters. 56(20). 1983–1985. 70 indexed citations
17.
Yin, Xin, Fred H. Pollak, J. T. Fitch, C. H. Björkman, & G. Lucovsky. (1990). Photoreflectance Study Of Strain At Si/SiO 2 Interfaces Prepared By Thermal Oxidation Of Silicon. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1186. 122–122. 1 indexed citations
18.
Björkman, C. H., J. T. Fitch, & G. Lucovsky. (1989). Stress Gradients in SIO2 Thin Films Prepared by Thermal Oxidation and Subjected to Rapid Thermal Annealing. MRS Proceedings. 146. 6 indexed citations
19.
Fitch, J. T., C. H. Björkman, G. Lucovsky, Fred H. Pollak, & Xin Yin. (1989). Local atomic structure at thermally grown Si/SiO2 interfaces. Applied Surface Science. 39(1-4). 103–115. 15 indexed citations
20.
Fitch, J. T., C. H. Björkman, Joseph J. Sumakeris, & G. Lucovsky. (1988). The Effects of Intrinsic In-Plane Stress on the Local Atomic Structure of Thermally Grown SiO2. MRS Proceedings. 130. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by J. G. Mihaychuk Breakdown of academic impact, for papers by Ken-ichi Muta Breakdown of academic impact, for papers by C. Grivas Breakdown of academic impact, for papers by X. Hu Breakdown of academic impact, for papers by Taibun Kamejima Breakdown of academic impact, for papers by G. J. Gerardi Breakdown of academic impact, for papers by F. Ferrieu Breakdown of academic impact, for papers by L. Ledebo Breakdown of academic impact, for papers by М. К. Шейнкман Breakdown of academic impact, for papers by Y. S. Park
Rankless by CCL
2026