H. Niimi

1.4k total citations
52 papers, 1.1k citations indexed

About

H. Niimi is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, H. Niimi has authored 52 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Electrical and Electronic Engineering, 26 papers in Materials Chemistry and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in H. Niimi's work include Semiconductor materials and devices (52 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Electronic and Structural Properties of Oxides (13 papers). H. Niimi is often cited by papers focused on Semiconductor materials and devices (52 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers) and Electronic and Structural Properties of Oxides (13 papers). H. Niimi collaborates with scholars based in United States, Germany and Saudi Arabia. H. Niimi's co-authors include G. Lucovsky, G. Lucovsky, S. V. Hattangady, J. E. Rowe, Jeffrey W. Keister, Yongping Wu, J. C. Phillips, Theodore E. Madey, Veena Misra and J. Kołodziej and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

H. Niimi

52 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
H. Niimi United States	17	1.0k	495	230	156	75	52	1.1k
Fredrik Owman Sweden	14	767 0.7×	479 1.0×	379 1.6×	212 1.4×	112 1.5×	15	1.1k
J. Bąk‐Misiuk Poland	15	508 0.5×	455 0.9×	370 1.6×	154 1.0×	144 1.9×	131	799
N. Hirashita Japan	17	866 0.8×	362 0.7×	219 1.0×	80 0.5×	50 0.7×	60	991
R. L. Hengehold United States	17	704 0.7×	603 1.2×	327 1.4×	234 1.5×	257 3.4×	84	1.0k
B. Barcones Spain	17	542 0.5×	571 1.2×	227 1.0×	165 1.1×	88 1.2×	27	855
Sandrine Juillaguet France	18	872 0.8×	312 0.6×	283 1.2×	318 2.0×	171 2.3×	121	1.1k
Masashi Suezawa Japan	17	784 0.8×	487 1.0×	401 1.7×	66 0.4×	32 0.4×	107	956
L. Miotti Brazil	15	516 0.5×	276 0.6×	85 0.4×	88 0.6×	43 0.6×	61	687
Daniela Cavalcoli Italy	16	704 0.7×	502 1.0×	260 1.1×	155 1.0×	184 2.5×	85	936
H. L. Glass United States	17	634 0.6×	394 0.8×	398 1.7×	241 1.5×	40 0.5×	57	910

Countries citing papers authored by H. Niimi

Since Specialization

Citations

This map shows the geographic impact of H. Niimi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Niimi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Niimi more than expected).

Fields of papers citing papers by H. Niimi

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Niimi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Niimi. The network helps show where H. Niimi may publish in the future.

Co-authorship network of co-authors of H. Niimi

This figure shows the co-authorship network connecting the top 25 collaborators of H. Niimi. A scholar is included among the top collaborators of H. Niimi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Niimi. H. Niimi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Kim, Yonghwi, S. C. Song, J. W. Blatchford, et al.. (2015). Dipole-induced gate leakage reduction in scaled MOSFETs with a highly doped polysilicon/nitrided oxide gate stack. Microelectronic Engineering. 142. 1–6. 1 indexed citations

Wimmer, E., Reza Amini Najafabadi, George A. Young, et al.. (2010). Ab initiocalculations for industrial materials engineering: successes and challenges. Journal of Physics Condensed Matter. 22(38). 384215–384215. 14 indexed citations

Hinkle, Christopher L., Rohit Galatage, R. A. Chapman, et al.. (2010). Dipole controlled metal gate with hybrid low resistivity cladding for gate-last CMOS with low Vt. King Abdullah University of Science and Technology Repository (King Abdullah University of Science and Technology). 183–184. 9 indexed citations

Johnson, R. S., H. Niimi, & G. Lucovsky. (2000). New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 18(4). 1230–1233. 36 indexed citations

Lucovsky, G., Hong Yang, H. Niimi, M. F. Thorpe, & J. C. Phillips. (2000). Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor–dielectric interfaces and (ii) internal interfaces in stacked dielectrics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(4). 2179–2186. 2 indexed citations

Brillson, L. J., A. P. Young, B. D. White, et al.. (2000). Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(3). 1737–1741. 5 indexed citations

Niimi, H.. (1999). Monolayer-level controlled incorporation of nitrogen in ultra-thin gate dielectrics using remote plasma processing. 1 indexed citations

Misra, Veena, Yi Wu, H. Niimi, et al.. (1999). Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(4). 1836–1839. 23 indexed citations

Niimi, H. & G. Lucovsky. (1999). Monolayer-level controlled incorporation of nitrogen at Si–SiO2 interfaces using remote plasma processing. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 17(6). 3185–3196. 44 indexed citations

10.

Brillson, L. J., A. P. Young, J. Schäfer, H. Niimi, & G. Lucovsky. (1999). Ultrathin Silicon Oxide and Nitride – Silicon Interface States. MRS Proceedings. 567. 4 indexed citations

11.

Schäfer, J., A. P. Young, L. J. Brillson, H. Niimi, & G. Lucovsky. (1998). Depth-dependent spectroscopic defect characterization of the interface between plasma-deposited SiO2 and silicon. Applied Physics Letters. 73(6). 791–793. 32 indexed citations

12.

Lucovsky, G., H. Niimi, Yongping Wu, C. Parker, & John R. Hauser. (1998). Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 16(3). 1721–1729. 29 indexed citations

13.

Young, A. P., J. Schäfer, Gregg H. Jessen, et al.. (1998). Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si–SiO2 interfaces. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(4). 2177–2181. 4 indexed citations

14.

Niimi, H., et al.. (1998). Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices. Journal of Applied Physics. 83(4). 2327–2337. 83 indexed citations

15.

Niimi, H., et al.. (1998). Plasma-engineered Si−SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O. Surface and Coatings Technology. 98(1-3). 1524–1528. 2 indexed citations

16.

Schäfer, J., A. P. Young, L. J. Brillson, H. Niimi, & G. Lucovsky. (1998). Cathodoluminescence Studies of Si-Sio₂ Interfaces Prepared by Plasma-Assisted Oxidation and Subjected to Post-Oxidation Rapid Thermal Annealing. MRS Proceedings. 525. 1 indexed citations

17.

Lucovsky, G., S. V. Hattangady, H. Niimi, et al.. (1996). Local atomic structure and electrical properties of nitrided SiSiO2 interfaces produced by low-temperature plasma processing and rapid thermal annealing, and explained by ab-initio quantum chemistry calculations. Applied Surface Science. 104-105. 335–341. 7 indexed citations

18.

Schmidt, D., H. Niimi, Bruce J. Hinds, D. E. Aspnes, & G. Lucovsky. (1996). New approach to preparing smooth Si(100) surfaces: Characterization by spectroellipsometry and validation of Si/SiO2 interfaces properties in metal-oxide-semiconductor devices. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 14(4). 2812–2816. 5 indexed citations

19.

Hattangady, S. V., et al.. (1995). Controlled nitrogen incorporation at SiSiO2 interfaces and in thin gate dielectrics by remote-plasma-assisted oxidation and deposition processes. Microelectronic Engineering. 28(1-4). 117–120. 3 indexed citations

20.

Ma, Yi, et al.. (1994). Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing. MRS Proceedings. 342. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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