J.B. Boos

3.1k total citations
158 papers, 2.4k citations indexed

About

J.B. Boos is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, J.B. Boos has authored 158 papers receiving a total of 2.4k indexed citations (citations by other indexed papers that have themselves been cited), including 151 papers in Electrical and Electronic Engineering, 118 papers in Atomic and Molecular Physics, and Optics and 17 papers in Biomedical Engineering. Recurrent topics in J.B. Boos's work include Semiconductor Quantum Structures and Devices (96 papers), Advancements in Semiconductor Devices and Circuit Design (81 papers) and Semiconductor materials and devices (79 papers). J.B. Boos is often cited by papers focused on Semiconductor Quantum Structures and Devices (96 papers), Advancements in Semiconductor Devices and Circuit Design (81 papers) and Semiconductor materials and devices (79 papers). J.B. Boos collaborates with scholars based in United States, France and Netherlands. J.B. Boos's co-authors include B. R. Bennett, W. Kruppa, Mario G. Ancona, R. Magno, Robert B. Bass, Daeui Park, B. V. Shanabrook, N. A. Papanicolaou, Krishna C. Saraswat and Aneesh Nainani and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J.B. Boos

151 papers receiving 2.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J.B. Boos United States 27 2.2k 1.5k 425 382 192 158 2.4k
R. Magno United States 19 1.1k 0.5× 1.3k 0.8× 422 1.0× 246 0.6× 150 0.8× 68 1.6k
K. Y. Cheng United States 23 1.3k 0.6× 1.3k 0.9× 448 1.1× 227 0.6× 351 1.8× 102 1.7k
K. Heime Germany 18 1.2k 0.5× 1.1k 0.7× 382 0.9× 141 0.4× 362 1.9× 171 1.5k
R. K. Ahrenkiel United States 25 2.4k 1.1× 1.3k 0.8× 1.2k 2.8× 272 0.7× 79 0.4× 157 2.6k
Kirstin Alberi United States 19 1.1k 0.5× 1.0k 0.7× 604 1.4× 215 0.6× 313 1.6× 82 1.6k
Thomas Adam United States 20 1.2k 0.5× 637 0.4× 275 0.6× 212 0.6× 86 0.4× 87 1.5k
Mark A. Wistey United States 31 2.3k 1.0× 1.7k 1.1× 279 0.7× 478 1.3× 754 3.9× 127 2.6k
F. Bassani France 22 1.3k 0.6× 1.1k 0.8× 890 2.1× 425 1.1× 133 0.7× 105 1.9k
P. S. Kop’ev Russia 18 1.1k 0.5× 1.3k 0.9× 637 1.5× 148 0.4× 291 1.5× 60 1.6k
Tetsuya Suemitsu Japan 20 1.3k 0.6× 718 0.5× 386 0.9× 339 0.9× 477 2.5× 154 1.6k

Countries citing papers authored by J.B. Boos

Since Specialization
Citations

This map shows the geographic impact of J.B. Boos's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.B. Boos with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.B. Boos more than expected).

Fields of papers citing papers by J.B. Boos

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.B. Boos. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.B. Boos. The network helps show where J.B. Boos may publish in the future.

Co-authorship network of co-authors of J.B. Boos

This figure shows the co-authorship network connecting the top 25 collaborators of J.B. Boos. A scholar is included among the top collaborators of J.B. Boos based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.B. Boos. J.B. Boos is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shaw, J. L., J.B. Boos, Byoung Don Kong, Jeremy T. Robinson, & Glenn G. Jernigan. (2019). Field emission energy distribution and three-terminal current-voltage characteristics from planar graphene edges. Journal of Applied Physics. 125(5). 11 indexed citations
2.
Schrimpf, Ronald D., Robert A. Reed, En Xia Zhang, et al.. (2012). Single-event transient sensitivity to gate bias in InAlSb/InAs/AlGaSb high electron mobility transistors. 77–80. 2 indexed citations
3.
Yuan, Ze, Aneesh Nainani, B. R. Bennett, et al.. (2012). Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors. Applied Physics Letters. 100(14). 9 indexed citations
4.
Madan, Himanshu, Rajiv Misra, Ashish Agrawal, et al.. (2011). Experimental Determination of Quantum and Centroid Capacitance in Arsenide–Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect. IEEE Transactions on Electron Devices. 58(5). 1397–1403. 12 indexed citations
5.
Turowski, Marek, Ashok Raman, Alex Fedoseyev, Dale McMorrow, & J.B. Boos. (2010). Analysis of transient radiation effects in III–V compound high electron mobility transistors using mixed-mode 3D simulations. International Conference Mixed Design of Integrated Circuits and Systems. 391–396. 5 indexed citations
6.
DasGupta, Sandeepan, Dale McMorrow, Robert A. Reed, Ronald D. Schrimpf, & J.B. Boos. (2010). Gate Bias Dependence of Single Event Charge Collection in AlSb/InAs HEMTs. IEEE Transactions on Nuclear Science. 57(4). 1856–1860. 16 indexed citations
7.
Stievater, Todd H., W. S. Rabinovich, Mike S. Ferraro, et al.. (2008). Photonic microharp chemical sensors. Optics Express. 16(4). 2423–2423. 18 indexed citations
8.
Magno, R., James G. Champlain, H. S. Newman, et al.. (2008). Antimonide-based diodes for terahertz mixers. Applied Physics Letters. 92(24). 7 indexed citations
9.
Williams, Keith J., D.A. Tulchinsky, J.B. Boos, Doewon Park, & Peter G. Goetz. (2006). High-Power Photodiodes. 50–51. 2 indexed citations
10.
Deal, W.R., et al.. (2006). A Low Power/Low Noise MMIC Amplifier for Phased-Array Applications using InAs/AlSb HEMT. 2051–2054. 14 indexed citations
11.
Deal, W.R., R. Tsai, M. Lange, et al.. (2005). A 110-GHz AlSb/InAs MMIC amplifier. 301–304. 10 indexed citations
12.
McMorrow, Dale, et al.. (2004). Ionization-Induced Carrier Transport in InAlAs/InGaAs High Electron Mobility Transistors. ESA Special Publication. 536. 385. 2 indexed citations
13.
Tsai, R., J.B. Boos, B. R. Bennett, et al.. (2004). 275 GHz f/sub MAX/, 220 GHz f/sub T/ AlSb/InAs HEMT technology. 12–13. 3 indexed citations
14.
Tsai, R., M. Barsky, J.B. Boos, et al.. (2003). Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics. 294–297. 31 indexed citations
15.
Kruppa, W. & J.B. Boos. (2002). RF measurement of impact ionization and its temperature dependence in AlSb/InAs HEMTs. 27. 339–342. 3 indexed citations
16.
Boos, J.B., B. R. Bennett, W. Kruppa, et al.. (1999). Ohmic contacts in AlSb/InAs high electron mobility transistors for low-voltage operation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(3). 1022–1027. 34 indexed citations
17.
Boos, J.B., M. J. Yang, B. R. Bennett, et al.. (1999). Low-voltage, high-speed AlSb/InAsSb HEMTs. Electronics Letters. 35(10). 847–848. 20 indexed citations
18.
Kruppa, W. & J.B. Boos. (1994). Transient response measurement of kink effect inInAlAs/InGaAs/InP HEMTs. Electronics Letters. 30(4). 368–369. 4 indexed citations
19.
Boos, J.B., W. Kruppa, & Bálint Molnár. (1989). A New Fabrication Approach For Planar, Ion-Implanted InP JFETs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1144. 306–306. 3 indexed citations
20.
Binari, S.C., et al.. (1984). Millimeter-wave monolithic passive circuit components. 45(4). 579–586. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by R. Magno Breakdown of academic impact, for papers by K. Y. Cheng Breakdown of academic impact, for papers by K. Heime Breakdown of academic impact, for papers by R. K. Ahrenkiel Breakdown of academic impact, for papers by Kirstin Alberi Breakdown of academic impact, for papers by Thomas Adam Breakdown of academic impact, for papers by Mark A. Wistey Breakdown of academic impact, for papers by F. Bassani Breakdown of academic impact, for papers by P. S. Kop’ev Breakdown of academic impact, for papers by Tetsuya Suemitsu
Rankless by CCL
2026