D. A. Steigerwald

4.7k total citations · 2 hit papers
26 papers, 3.7k citations indexed

About

D. A. Steigerwald is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, D. A. Steigerwald has authored 26 papers receiving a total of 3.7k indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Atomic and Molecular Physics, and Optics, 15 papers in Condensed Matter Physics and 11 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in D. A. Steigerwald's work include GaN-based semiconductor devices and materials (15 papers), Semiconductor Quantum Structures and Devices (8 papers) and Magnetic properties of thin films (6 papers). D. A. Steigerwald is often cited by papers focused on GaN-based semiconductor devices and materials (15 papers), Semiconductor Quantum Structures and Devices (8 papers) and Magnetic properties of thin films (6 papers). D. A. Steigerwald collaborates with scholars based in United States and Canada. D. A. Steigerwald's co-authors include M. G. Craford, S. D. Lester, F. A. Ponce, P. Martin, W. F. Egelhoff, M. J. Ludowise, R. M. Fletcher, D. M. Collins, Serge Rudaz and J Bhat and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

D. A. Steigerwald

26 papers receiving 3.5k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Illumination with solid state lighting technology

2002 871 citations D. A. Steigerwald, J Bhat et al. IEEE Journal of Selected Topics in Quantum Electronics profile →
High dislocation densities in high efficiency GaN-based light-emitting diodes

1995 809 citations S. D. Lester, F. A. Ponce et al. Applied Physics Letters profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. A. Steigerwald United States	17	2.5k	1.7k	1.6k	1.3k	943	26	3.7k
Akira Sakai Japan	35	1.6k 0.7×	3.0k 1.8×	2.1k 1.3×	2.2k 1.6×	890 0.9×	310	5.6k
M. J. Ludowise United States	26	1.7k 0.7×	2.3k 1.4×	1.7k 1.1×	1.0k 0.8×	465 0.5×	87	3.4k
M. G. Craford United States	30	3.3k 1.3×	3.2k 1.9×	2.8k 1.8×	1.9k 1.5×	922 1.0×	83	5.7k
Masahiko Sano Japan	25	3.4k 1.3×	1.4k 0.9×	1.6k 1.0×	1.6k 1.2×	1.3k 1.4×	44	4.0k
Jean‐Luc Rouvière France	44	2.6k 1.1×	2.6k 1.6×	2.2k 1.4×	2.2k 1.6×	1.3k 1.4×	198	5.7k
P. J. Parbrook United Kingdom	30	2.2k 0.9×	1.6k 1.0×	1.2k 0.8×	1.4k 1.1×	1.1k 1.1×	206	3.4k
Jae‐Hyun Ryou United States	38	2.9k 1.1×	2.7k 1.6×	1.7k 1.1×	1.9k 1.4×	1.7k 1.8×	257	5.4k
J. C. Bravman United States	36	1.1k 0.4×	2.0k 1.2×	1.2k 0.8×	1.7k 1.3×	1.7k 1.8×	163	4.7k
H. P. Strunk Germany	37	699 0.3×	2.8k 1.7×	1.7k 1.1×	2.2k 1.7×	474 0.5×	232	4.6k
Daniel Feezell United States	34	3.0k 1.2×	1.7k 1.0×	1.8k 1.1×	1.3k 1.0×	1.1k 1.2×	113	3.8k

Countries citing papers authored by D. A. Steigerwald

Since Specialization

Citations

This map shows the geographic impact of D. A. Steigerwald's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. A. Steigerwald with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. A. Steigerwald more than expected).

Fields of papers citing papers by D. A. Steigerwald

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. A. Steigerwald. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. A. Steigerwald. The network helps show where D. A. Steigerwald may publish in the future.

Co-authorship network of co-authors of D. A. Steigerwald

This figure shows the co-authorship network connecting the top 25 collaborators of D. A. Steigerwald. A scholar is included among the top collaborators of D. A. Steigerwald based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. A. Steigerwald. D. A. Steigerwald is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Mueller‐Mach, Regina, Gerd Mueller, D. M. Collins, et al.. (2003). The LED lightbulb: are we there yet? progress and challenges for solid state illumination. Conference on Lasers and Electro-Optics. 16 indexed citations

Stockman, S. A., P. N. Grillot, Satoshi Watanabe, et al.. (2003). High-power GaN-based LEDs for lighting and display applications. 4–4. 1 indexed citations

Steigerwald, D. A., J Bhat, D. M. Collins, et al.. (2002). Illumination with solid state lighting technology. IEEE Journal of Selected Topics in Quantum Electronics. 8(2). 310–320. 871 indexed citations breakdown →

Krames, Michael R., J Bhat, D. M. Collins, et al.. (2002). High-Power III-Nitride Emitters for Solid-State Lighting. physica status solidi (a). 192(2). 237–245. 54 indexed citations

Steigerwald, D. A., Jonathan J. Wierer, Nathan F. Gardner, et al.. (2001). Performance of High-Power AlInGaN Light Emitting Diodes. physica status solidi (a). 188(1). 15–21. 98 indexed citations

Wierer, Jonathan J., D. A. Steigerwald, Michael R. Krames, et al.. (2001). High-power AlGaInN flip-chip light-emitting diodes. Applied Physics Letters. 78(22). 3379–3381. 348 indexed citations

Götz, Werner, et al.. (1999). Hall-effect characterization of III–V nitride semiconductors for high efficiency light emitting diodes. Materials Science and Engineering B. 59(1-3). 211–217. 138 indexed citations

Kozodoy, P., A. Abare, R. K. Sink, et al.. (1997). MOCVD Growth of High Output Power Ingan Multiple Quantum Well Light Emitting Diode. MRS Proceedings. 468. 7 indexed citations

Steigerwald, D. A., W. Imler, Chia-Chen Kuo, et al.. (1996). A study of parasitic reactions between NH3 and TMGa or TMAI. Journal of Electronic Materials. 25(6). 1004–1008. 142 indexed citations

10.

Kish, F. A., D. A. Vanderwater, D.C. DeFevere, et al.. (1996). Highly reliable and efficient semiconductor wafer-bondedAlGaInP/GaP light-emitting diodes. Electronics Letters. 32(2). 132–134. 37 indexed citations

11.

Steigerwald, D. A., et al.. (1995). Parasitic Reactions between Alkyls and Ammonia in OMVPE. MRS Proceedings. 395. 9 indexed citations

12.

Lester, S. D., F. A. Ponce, M. G. Craford, & D. A. Steigerwald. (1995). High dislocation densities in high efficiency GaN-based light-emitting diodes. Applied Physics Letters. 66(10). 1249–1251. 809 indexed citations breakdown →

13.

Egelhoff, W. F. & D. A. Steigerwald. (1989). The role of adsorbed gases in metal on metal epitaxy. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 7(3). 2167–2173. 149 indexed citations

14.

Steigerwald, D. A., I. Jacob, & W. F. Egelhoff. (1988). Structural study of the epitaxial growth of fcc-Fe films, sandwiches, and superlattices on Cu(100). Surface Science. 202(3). 472–492. 208 indexed citations

15.

Steigerwald, D. A. & W. F. Egelhoff. (1988). Summary Abstract: Growth of ultrathin Fe films on Cu(100): Mechanisms, morphology, and stability. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1995–1996. 1 indexed citations

16.

Egelhoff, W. F., et al.. (1988). Short-range order in submonolayer Ni on GaAs(110) by x-ray photoelectron forward scattering. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1495–1498. 6 indexed citations

17.

Heinrich, B., K. B. Urquhart, John Dutcher, et al.. (1988). Large surface anisotropies in ultrathin films of bcc and fcc Fe(001) (invited). Journal of Applied Physics. 63(8). 3863–3868. 85 indexed citations

18.

Steigerwald, D. A. & W. F. Egelhoff. (1988). Epitaxial fcc Fe Films on Cu(100). Physical Review Letters. 60(24). 2558–2558. 49 indexed citations

19.

Steigerwald, D. A. & W. F. Egelhoff. (1987). Observation of intensity oscillations in RHEED during the epitaxial growth of Cu and fcc Fe on Cu(100). Surface Science Letters. 192(2-3). L887–L892. 6 indexed citations

20.

Steigerwald, D. A. & W. F. Egelhoff. (1987). Observation of intensity oscillations in rheed during the epitaxial growth of Cu and fcc Fe on Cu(100). Surface Science. 192(2-3). L887–L892. 93 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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