Rich Liu

1.1k total citations
59 papers, 866 citations indexed

About

Rich Liu is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computer Networks and Communications. According to data from OpenAlex, Rich Liu has authored 59 papers receiving a total of 866 indexed citations (citations by other indexed papers that have themselves been cited), including 57 papers in Electrical and Electronic Engineering, 22 papers in Materials Chemistry and 17 papers in Computer Networks and Communications. Recurrent topics in Rich Liu's work include Semiconductor materials and devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Advanced Memory and Neural Computing (17 papers). Rich Liu is often cited by papers focused on Semiconductor materials and devices (54 papers), Advancements in Semiconductor Devices and Circuit Design (33 papers) and Advanced Memory and Neural Computing (17 papers). Rich Liu collaborates with scholars based in Taiwan and United Kingdom. Rich Liu's co-authors include Kuang-Yeu Hsieh, Chih‐Yuan Lu, Hang-Ting Lue, Erh-Kun Lai, Szu-Yu Wang, Chih-Yuan Lu, Tzu‐Hsuan Hsu, Yi‐Hsuan Hsiao, Tahone Yang and Kuang‐Chao Chen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Rich Liu

58 papers receiving 828 citations

Peers

Rich Liu

EEE

CNC

Pei-Ying Du Taiwan

Yen-Hao Shih Taiwan

Chilhee Chung South Korea

G. Atwood United States

Kuang-Yeu Hsieh Taiwan

P. Cappelletti Italy

Jungdal Choi South Korea

Jixuan Wu China

Kyung‐Chang Ryoo South Korea

Shosuke Fujii Japan

Pei-Ying Du Taiwan

Rich Liu

527 ×0.7

EEE

217 ×0.8

154 ×0.8

CNC

41 ×0.6

39 ×0.9

Citations per year, relative to Rich Liu Rich Liu (= 1×) peers Pei-Ying Du

Countries citing papers authored by Rich Liu

Since Specialization

Citations

This map shows the geographic impact of Rich Liu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Rich Liu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Rich Liu more than expected).

Fields of papers citing papers by Rich Liu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Rich Liu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Rich Liu. The network helps show where Rich Liu may publish in the future.

Co-authorship network of co-authors of Rich Liu

This figure shows the co-authorship network connecting the top 25 collaborators of Rich Liu. A scholar is included among the top collaborators of Rich Liu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Rich Liu. Rich Liu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Hsu, Tzu‐Hsuan, Hang-Ting Lue, Sheng-Chih Lai, et al.. (2009). Reliability of planar and FinFET SONOS devices for NAND flash applications - Field enhancement vs. barrier engineering. 154–155. 7 indexed citations

Lue, Hang-Ting, Pei-Ying Du, Tzu‐Hsuan Hsu, et al.. (2009). A novel planar floating-gate (FG) / charge-trapping (CT) NAND device using BE-SONOS inter-poly dielectric (IPD). 1–4. 1 indexed citations

Lue, Hang-Ting, Tzu‐Hsuan Hsu, Yi‐Hsuan Hsiao, et al.. (2009). Understanding STI edge fringing field effect on the scaling of charge-trapping (CT) NAND Flash and modeling of incremental step pulse programming (ISPP). 1–4. 22 indexed citations

Hsu, Tzu‐Hsuan, Hang-Ting Lue, Ya‐Chin King, et al.. (2009). Physical Model of Field Enhancement and Edge Effects of FinFET Charge-Trapping NAND Flash Devices. IEEE Transactions on Electron Devices. 56(6). 1235–1242. 20 indexed citations

Chien, Wei-Chih, Erh-Kun Lai, Yeong-Der Yao, et al.. (2008). Unipolar Switching Characteristics for Self-Aligned WO<inf>x</inf> Resistance RAM (R-RAM). 144–145. 5 indexed citations

Wang, Szu-Yu, Hang-Ting Lue, Pei-Ying Du, et al.. (2008). Reliability and Processing Effects of Bandgap-Engineered SONOS (BE-SONOS) Flash Memory and Study of the Gate-Stack Scaling Capability. IEEE Transactions on Device and Materials Reliability. 8(2). 416–425. 14 indexed citations

Du, Pei-Ying, Hang-Ting Lue, Szu-Yu Wang, et al.. (2008). A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method Part II: Study of the Intra-Nitride Behaviors and Reliability of SONOS-Type Devices. IEEE Transactions on Electron Devices. 55(8). 2229–2237. 14 indexed citations

Lai, Sheng-Chih, Hang-Ting Lue, Tai‐Bor Wu, et al.. (2008). Highly Reliable MA BE-SONOS (Metal-Al<inf>2</inf>O<inf>3</inf> Bandgap Engineered SONOS) Using a SiO<inf>2</inf> Buffer Layer. 58–59. 2 indexed citations

Lai, Sheng-Chih, Hang-Ting Lue, Yu‐Fong Huang, et al.. (2008). An Oxide-Buffered BE-MANOS Charge-Trapping Device and the Role of Al2O3. 25. 101–102. 9 indexed citations

10.

Lue, Hang-Ting, Szu-Yu Wang, Erh-Kun Lai, et al.. (2008). study of incremental step pulse programming (ISPP) and STI edge effect of BE-SONOS NAND Flash. 693–694. 44 indexed citations

11.

Lue, Hang-Ting, Pei-Ying Du, Szu-Yu Wang, et al.. (2008). A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method—Part I: Fundamental Theory and Applications to Study of the Trapped Charge Vertical Location and Capture Efficiency of SONOS-Type Devices. IEEE Transactions on Electron Devices. 55(8). 2218–2228. 23 indexed citations

12.

Lu, Chih‐Yuan, Kuang-Yeu Hsieh, & Rich Liu. (2008). Future challenges of flash memory technologies. Microelectronic Engineering. 86(3). 283–286. 133 indexed citations

13.

Hsu, Tzu‐Hsuan, Hang-Ting Lue, Erh-Kun Lai, et al.. (2007). A High-Speed BE-SONOS NAND Flash Utilizing the Field-Enhancement Effect of FinFET. 913–916. 34 indexed citations

14.

Lai, Sheng-Chih, Erh-Kun Lai, Kuang-Yeu Hsieh, et al.. (2007). A Study on the Erase and Retention Mechanisms for MONOS, MANOS, and BE-SONOS Non-Volatile Memory Devices. 1–2. 8 indexed citations

15.

Lue, Hang-Ting, et al.. (2007). Study of the Band-to-Band Tunneling Hot-Electron (BBHE) Programming Characteristics of p-Channel Bandgap-Engineered SONOS (BE-SONOS). IEEE Transactions on Electron Devices. 54(4). 699–706. 11 indexed citations

16.

Lue, Hang-Ting, Erh-Kun Lai, Szu-Yu Wang, et al.. (2007). A Novel Gate-Injection Program/Erase P-Channel NAND-Type Flash Memory with High (10M Cycle) Endurance. 14 indexed citations

17.

Ho, ChiaHua, Erh-Kun Lai, Y. D. Yao, et al.. (2007). A Highly Reliable Self-Aligned Graded Oxide WO<inf>x</inf> Resistance Memory: Conduction Mechanisms and Reliability. 228–229. 49 indexed citations

18.

Lue, Hang-Ting, Yi‐Hsuan Hsiao, Yen-Hao Shih, et al.. (2006). Study of Charge Loss Mechanism of SONOS-Type Devices using Hot-Hole Erase and Methods to Improve the Charge Retention. 523–529. 15 indexed citations

19.

Shih, Yang‐Hsin, et al.. (2006). Two-bit/cell Nitride Trapping Nonvolatile Memory and Reliability. 21. 752–755. 1 indexed citations

20.

Lue, Hang-Ting, Szu-Yu Wang, Yi‐Hsuan Hsiao, et al.. (2006). Reliability Model of Bandgap Engineered SONOS (BE-SONOS). 1–4. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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