Dai-Ying Lee

429 total citations
23 papers, 367 citations indexed

About

Dai-Ying Lee is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Cellular and Molecular Neuroscience. According to data from OpenAlex, Dai-Ying Lee has authored 23 papers receiving a total of 367 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 5 papers in Cellular and Molecular Neuroscience. Recurrent topics in Dai-Ying Lee's work include Advanced Memory and Neural Computing (20 papers), Ferroelectric and Negative Capacitance Devices (14 papers) and Semiconductor materials and devices (6 papers). Dai-Ying Lee is often cited by papers focused on Advanced Memory and Neural Computing (20 papers), Ferroelectric and Negative Capacitance Devices (14 papers) and Semiconductor materials and devices (6 papers). Dai-Ying Lee collaborates with scholars based in Taiwan. Dai-Ying Lee's co-authors include Tseung‐Yuen Tseng, Chih‐Yang Lin, Pang Lin, Yu‐Hsuan Lin, Ming-Hsiu Lee, Yu‐Yu Lin, Chih‐Yuan Lu, Chao‐Hung Wang, Hsiang-Lan Lung and Shengyu Wang and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

Dai-Ying Lee

21 papers receiving 362 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Dai-Ying Lee Taiwan 9 328 155 79 55 48 23 367
Tiangui You China 8 319 1.0× 99 0.6× 96 1.2× 134 2.4× 61 1.3× 10 362
Chansoo Yoon South Korea 10 276 0.8× 128 0.8× 67 0.8× 84 1.5× 49 1.0× 20 336
Zihong Shen China 9 285 0.9× 155 1.0× 52 0.7× 33 0.6× 71 1.5× 19 325
Mousam Charan Sahu India 11 324 1.0× 186 1.2× 59 0.7× 107 1.9× 26 0.5× 19 397
Yuliang Ye China 10 291 0.9× 184 1.2× 59 0.7× 34 0.6× 63 1.3× 28 340
Sandhyarani Sahoo India 10 259 0.8× 152 1.0× 49 0.6× 79 1.4× 18 0.4× 15 322
Wen-Yueh Jang Taiwan 7 362 1.1× 121 0.8× 85 1.1× 73 1.3× 22 0.5× 12 378
Felix Messerschmitt Switzerland 5 326 1.0× 160 1.0× 113 1.4× 133 2.4× 47 1.0× 6 401
Chen-Hsi Lin Taiwan 11 553 1.7× 201 1.3× 155 2.0× 109 2.0× 27 0.6× 19 585

Countries citing papers authored by Dai-Ying Lee

Since Specialization
Citations

This map shows the geographic impact of Dai-Ying Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dai-Ying Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dai-Ying Lee more than expected).

Fields of papers citing papers by Dai-Ying Lee

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dai-Ying Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dai-Ying Lee. The network helps show where Dai-Ying Lee may publish in the future.

Co-authorship network of co-authors of Dai-Ying Lee

This figure shows the co-authorship network connecting the top 25 collaborators of Dai-Ying Lee. A scholar is included among the top collaborators of Dai-Ying Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dai-Ying Lee. Dai-Ying Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chen, Yu-Rui, et al.. (2024). C-Axis Oriented HZO on Flat Amorphous TiN Achieving High Uniformity, Breakdown Field, Final 2Pr, and Endurance. IEEE Transactions on Electron Devices. 72(1). 222–227. 2 indexed citations
2.
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Lin, Yu‐Hsuan, Ming-Hsiu Lee, Chih-Chang Hsieh, et al.. (2022). NOR Flash-based Multilevel In-Memory-Searching Architecture for Approximate Computing. 1–4. 3 indexed citations
5.
Lin, Yu‐Hsuan, Dai-Ying Lee, Ming-Hsiu Lee, et al.. (2021). A novel 1T2R self-reference physically unclonable function suitable for advanced logic nodes for high security level applications. Japanese Journal of Applied Physics. 61(SC). SC1003–SC1003. 1 indexed citations
6.
Lin, Yu‐Hsuan, Dai-Ying Lee, Chao‐Hung Wang, et al.. (2020). Impacts and solutions of nonvolatile-memory-induced weight error in the computing-in-memory neural network system. Japanese Journal of Applied Physics. 59(SG). SGGB15–SGGB15. 1 indexed citations
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Lin, Yu‐Hsuan, Ming-Hsiu Lee, Chao‐Hung Wang, et al.. (2017). A comprehensive study of 3-stage high resistance state retention behavior for TMO ReRAMs from single cells to a large array. 2.5.1–2.5.4. 6 indexed citations
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Lin, Yu‐Hsuan, Ming-Hsiu Lee, Jau-Yi Wu, et al.. (2016). A Novel Varying-Bias Read Scheme for MLC and Wide Temperature Range TMO ReRAM. IEEE Electron Device Letters. 37(11). 1426–1429. 9 indexed citations
11.
Chien, Wei-Chih, Wei-Chen Chen, Dai-Ying Lee, et al.. (2013). A novel high performance WO x ReRAM based on thermally-induced SET operation. Symposium on VLSI Technology. 2 indexed citations
12.
Zhang, Guoyong, et al.. (2013). Unipolar Resistive Switching in ZrO2Thin Films. Japanese Journal of Applied Physics. 52(4R). 41101–41101. 9 indexed citations
13.
Lin, Yu‐Yu, Wei-Chih Chien, Erh-Kun Lai, et al.. (2013). A low-cost, forming-free WO<inf>x</inf> ReRAM using novel self-aligned photo-induced oxidation. 20.7.1–20.7.4. 3 indexed citations
14.
Lee, Dai-Ying, et al.. (2012). Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices. Nanotechnology. 23(14). 145201–145201. 51 indexed citations
15.
Lee, Dai-Ying & Tseung‐Yuen Tseng. (2012). Unipolar Resistive Switching Characteristics of a $ \hbox{ZrO}_{2}$ Memory Device With Oxygen Ion Conductor Buffer Layer. IEEE Electron Device Letters. 33(6). 803–805. 24 indexed citations
16.
Lee, Dai-Ying, et al.. (2012). Bottom Electrode Modification of ZrO2Resistive Switching Memory Device with Au Nanodots. Japanese Journal of Applied Physics. 51(2S). 02BJ04–02BJ04. 6 indexed citations
17.
Lee, Dai-Ying, et al.. (2012). Bottom Electrode Modification of ZrO2 Resistive Switching Memory Device with Au Nanodots. Japanese Journal of Applied Physics. 51(2S). 02BJ04–02BJ04. 4 indexed citations
18.
Wang, Shengyu, Chen-Han Tsai, Dai-Ying Lee, et al.. (2011). Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application. Microelectronic Engineering. 88(7). 1628–1632. 37 indexed citations
19.
Lee, Dai-Ying & Tseung‐Yuen Tseng. (2011). Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories. Journal of Applied Physics. 110(11). 49 indexed citations
20.
Chang, Li-Chun, et al.. (2007). Thickness-dependent microstructures and electrical properties of CaCu3Ti4O12 films derived from sol–gel process. Thin Solid Films. 516(2-4). 454–459. 24 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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