P. Flaitz

1.0k total citations
29 papers, 605 citations indexed

About

P. Flaitz is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, P. Flaitz has authored 29 papers receiving a total of 605 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 14 papers in Electronic, Optical and Magnetic Materials and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in P. Flaitz's work include Copper Interconnects and Reliability (13 papers), Semiconductor materials and devices (12 papers) and Electronic Packaging and Soldering Technologies (6 papers). P. Flaitz is often cited by papers focused on Copper Interconnects and Reliability (13 papers), Semiconductor materials and devices (12 papers) and Electronic Packaging and Soldering Technologies (6 papers). P. Flaitz collaborates with scholars based in United States, Switzerland and Taiwan. P. Flaitz's co-authors include Joseph A. Pask, Paul Ronsheim, Keith Thompson, Thomas F. Kelly, David J. Larson, E. Liniger, Chao Hu, C.-C. Yang, B. G. Baker and L. Gignac and has published in prestigious journals such as Science, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

P. Flaitz

29 papers receiving 579 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Flaitz United States 12 333 273 200 163 111 29 605
Takashi Kawakubo Japan 16 298 0.9× 671 2.5× 300 1.5× 252 1.5× 69 0.6× 69 931
Mikołaj Łukaszewicz Poland 14 244 0.7× 397 1.5× 109 0.5× 45 0.3× 140 1.3× 23 569
Shozo Inoue Japan 18 372 1.1× 489 1.8× 182 0.9× 148 0.9× 127 1.1× 96 894
A. Giannattasio United Kingdom 15 230 0.7× 449 1.6× 189 0.9× 74 0.5× 131 1.2× 32 765
Tzu-Hsuan Chang United States 9 173 0.5× 362 1.3× 176 0.9× 39 0.2× 153 1.4× 12 562
Chunhua Xu China 9 203 0.6× 302 1.1× 88 0.4× 59 0.4× 98 0.9× 23 655
Toshiyuki KONDO Japan 13 149 0.4× 248 0.9× 83 0.4× 85 0.5× 73 0.7× 55 424
S.-M. Kuo United States 12 459 1.4× 209 0.8× 145 0.7× 135 0.8× 108 1.0× 16 756
A. J. Griffin United States 14 144 0.4× 433 1.6× 94 0.5× 128 0.8× 67 0.6× 30 653
David Hernández‐Maldonado United Kingdom 14 118 0.4× 324 1.2× 162 0.8× 80 0.5× 75 0.7× 25 506

Countries citing papers authored by P. Flaitz

Since Specialization
Citations

This map shows the geographic impact of P. Flaitz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Flaitz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Flaitz more than expected).

Fields of papers citing papers by P. Flaitz

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Flaitz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Flaitz. The network helps show where P. Flaitz may publish in the future.

Co-authorship network of co-authors of P. Flaitz

This figure shows the co-authorship network connecting the top 25 collaborators of P. Flaitz. A scholar is included among the top collaborators of P. Flaitz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Flaitz. P. Flaitz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Domenicucci, A., et al.. (2014). Formation of Si:CP layer through in-situ doping and implantation process for n-type metal–oxide–semiconductor devices. Thin Solid Films. 557. 94–100. 1 indexed citations
2.
Zhang, John H., et al.. (2013). Reducing density-induced CMP non-uniformity for advanced semiconductor technology nodes. MRS Proceedings. 1560. 1 indexed citations
3.
Yang, Chia‐Jung, et al.. (2013). Cu Reflows on Ru. ECS Solid State Letters. 2(12). P110–P113. 2 indexed citations
4.
Joshi, Pratik, et al.. (2013). Systematic edge inspection for defect reduction. 272–274. 1 indexed citations
5.
Mignot, Yann, M. Sankarapandian, P. Flaitz, et al.. (2012). 56 nm pitch Cu dual-damascene interconnects with self-aligned via using negative-tone development Lithography-Etch-Lithography-Etch patterning scheme. Microelectronic Engineering. 107. 138–144. 9 indexed citations
6.
Yang, C.-C., P. Flaitz, & D. Edelstein. (2011). Characterization of Cu Reflows on Ru. IEEE Electron Device Letters. 32(10). 1430–1432. 2 indexed citations
7.
Lustig, N., J. Gill, R. G. Filippi, et al.. (2010). A BEOL multilevel structure with ultra low-k materials (k ≤ 2.4). 1–3. 1 indexed citations
8.
Schrott, A. G., Simone Raoux, Yang‐Hsin Shih, et al.. (2009). Endurance Improvement of Ge2Sb2Te5-Based Phase Change Memory. 1–2. 39 indexed citations
9.
Bruley, J., Geoffrey W. Burr, Robert E. Davis, et al.. (2009). Cr migration on 193nm binary photomasks. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7272. 727215–727215. 5 indexed citations
10.
Lu, Minhua, Da‐Yuan Shih, Sung K. Kang, C. C. Goldsmith, & P. Flaitz. (2009). Effect of Zn doping on SnAg solder microstructure and electromigration stability. Journal of Applied Physics. 106(5). 22 indexed citations
11.
Ronsheim, P., et al.. (2008). Impurity measurements in silicon with D-SIMS and atom probe tomography. Applied Surface Science. 255(4). 1547–1550. 28 indexed citations
12.
Ryan, E. Todd, S. M. Gates, A. Grill, et al.. (2008). Property modifications of nanoporous pSiCOH dielectrics to enhance resistance to plasma-induced damage. Journal of Applied Physics. 104(9). 43 indexed citations
13.
Rajendran, Bipin, M. Breitwisch, Geoffrey W. Burr, et al.. (2008). On the dynamic resistance and reliability of phase change memory. 96–97. 23 indexed citations
14.
Hu, Chao, L. Gignac, B. G. Baker, et al.. (2007). Impact of Cu microstructure on electromigration reliability. 93–95. 49 indexed citations
15.
Gignac, L., et al.. (2007). Electromigration Reliability in Nanoscale Cu Interconnects. MRS Proceedings. 1036. 1 indexed citations
16.
Ronsheim, Paul, J. S. McMurray, P. Flaitz, et al.. (2007). Analysis of Nickel Silicides by SIMS and LEAP. AIP conference proceedings. 931. 129–136. 2 indexed citations
17.
Moon, Bum Ki, Takashi Iijima, S. G. Malhotra, et al.. (2005). Integration of ALD-TaN Liners on Nanoporous Dielectrics. MRS Proceedings. 863. 2 indexed citations
18.
Benedict, J., et al.. (2004). TEM Specimen Preparation Technique For Small Semiconductor Devices. Microscopy Today. 12(2). 38–41. 1 indexed citations
19.
Flaitz, P. & Joseph A. Pask. (1987). Penetration of Polycrystalline Alumina by Glass at High Temperatures. Journal of the American Ceramic Society. 70(7). 449–455. 86 indexed citations
20.
Flaitz, P.. (1982). SOME ASPECTS OF LIQUID PHASE SINTERING OF ALUMINA. eScholarship (California Digital Library). 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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