Jung-Yu Hsieh

459 total citations
33 papers, 361 citations indexed

About

Jung-Yu Hsieh is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computer Networks and Communications. According to data from OpenAlex, Jung-Yu Hsieh has authored 33 papers receiving a total of 361 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 12 papers in Materials Chemistry and 8 papers in Computer Networks and Communications. Recurrent topics in Jung-Yu Hsieh's work include Semiconductor materials and devices (32 papers), Advanced Memory and Neural Computing (11 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). Jung-Yu Hsieh is often cited by papers focused on Semiconductor materials and devices (32 papers), Advanced Memory and Neural Computing (11 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). Jung-Yu Hsieh collaborates with scholars based in Taiwan, United States and India. Jung-Yu Hsieh's co-authors include Hang-Ting Lue, Kuang-Yeu Hsieh, Tahone Yang, Chih‐Yuan Lu, Kuang‐Chao Chen, Ling-Wu Yang, Szu-Yu Wang, Rich Liu, Tzu‐Hsuan Hsu and Erh-Kun Lai and has published in prestigious journals such as Journal of Physics D Applied Physics, IEEE Electron Device Letters and Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms.

In The Last Decade

Jung-Yu Hsieh

27 papers receiving 347 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Jung-Yu Hsieh Taiwan 10 337 93 68 42 22 33 361
Wandong Kim South Korea 9 205 0.6× 92 1.0× 48 0.7× 25 0.6× 39 1.8× 26 248
Ling-Wu Yang Taiwan 13 470 1.4× 138 1.5× 110 1.6× 49 1.2× 21 1.0× 39 499
O. Tsuchiya Japan 8 353 1.0× 75 0.8× 52 0.8× 10 0.2× 16 0.7× 15 380
Kang-Deog Suh South Korea 10 247 0.7× 134 1.4× 58 0.9× 23 0.5× 35 1.6× 27 305
D. Park South Korea 11 257 0.8× 66 0.7× 21 0.3× 31 0.7× 11 0.5× 20 278
Akira Kotabe Japan 9 371 1.1× 104 1.1× 37 0.5× 13 0.3× 19 0.9× 20 406
H. Aochi Japan 5 446 1.3× 183 2.0× 68 1.0× 37 0.9× 39 1.8× 9 521
A. Chimenton Italy 11 335 1.0× 115 1.2× 65 1.0× 14 0.3× 7 0.3× 40 362
Sung-Joo Hong South Korea 8 234 0.7× 115 1.2× 32 0.5× 10 0.2× 23 1.0× 25 269
Jongsun Sel South Korea 10 292 0.9× 111 1.2× 60 0.9× 7 0.2× 22 1.0× 16 318

Countries citing papers authored by Jung-Yu Hsieh

Since Specialization
Citations

This map shows the geographic impact of Jung-Yu Hsieh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jung-Yu Hsieh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jung-Yu Hsieh more than expected).

Fields of papers citing papers by Jung-Yu Hsieh

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jung-Yu Hsieh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jung-Yu Hsieh. The network helps show where Jung-Yu Hsieh may publish in the future.

Co-authorship network of co-authors of Jung-Yu Hsieh

This figure shows the co-authorship network connecting the top 25 collaborators of Jung-Yu Hsieh. A scholar is included among the top collaborators of Jung-Yu Hsieh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jung-Yu Hsieh. Jung-Yu Hsieh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Hsieh, Jung-Yu, et al.. (2016). Investigation of Floating Gate Implantation Effect on 1Xnm NAND FLASH. 1–3. 1 indexed citations
3.
Hsieh, Jung-Yu, et al.. (2014). Investigation of floating gate depletion effect on NAND FLASH reliability. 1–4. 2 indexed citations
4.
Cheng, Chun-Yi, et al.. (2012). Deposition Wet-Etching Deposition (DWD) Method for Polysilicon Gate Fill-In at Flash Memory. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 187. 49–52. 1 indexed citations
5.
Wang, Szu-Yu, Hang-Ting Lue, Tzu‐Hsuan Hsu, et al.. (2010). A high-endurance (≫100K) BE-SONOS NAND flash with a robust nitrided tunnel oxide/si interface. 11 indexed citations
6.
Hsieh, Jung-Yu, et al.. (2010). Robust shallow trench isolation technique used for 75nm nor flash memory. 260–263. 3 indexed citations
8.
Lue, Hang-Ting, Tzu‐Hsuan Hsu, Yi‐Hsuan Hsiao, et al.. (2010). A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device. 131–132. 87 indexed citations
9.
Chen, Kuan‐Fu, Jung-Yu Hsieh, N. K. Zous, et al.. (2009). Overall operation considerations for a SONOS-based memory. 150–151. 2 indexed citations
10.
Lue, Hang-Ting, Pei-Ying Du, Tzu‐Hsuan Hsu, et al.. (2009). A novel planar floating-gate (FG) / charge-trapping (CT) NAND device using BE-SONOS inter-poly dielectric (IPD). 1–4. 1 indexed citations
12.
Lai, Sheng-Chih, Hang-Ting Lue, Yu‐Fong Huang, et al.. (2009). Reliability study of MANOS with and without a SiO<inf>2</inf> buffer layer and BE-MANOS charge-trapping NAND flash devices. 152–153. 6 indexed citations
13.
Lai, Sheng-Chih, Hang-Ting Lue, Yu‐Fong Huang, et al.. (2008). An Oxide-Buffered BE-MANOS Charge-Trapping Device and the Role of Al2O3. 25. 101–102. 9 indexed citations
14.
Lai, Sheng-Chih, Hang-Ting Lue, Tai‐Bor Wu, et al.. (2008). Highly Reliable MA BE-SONOS (Metal-Al<inf>2</inf>O<inf>3</inf> Bandgap Engineered SONOS) Using a SiO<inf>2</inf> Buffer Layer. 58–59. 2 indexed citations
15.
Hsu, Tzu‐Hsuan, Hang-Ting Lue, Ya‐Chin King, et al.. (2008). A Study of Sub-40nm FinFET BE-SONOS NAND Flash. 4 indexed citations
16.
Lai, Sheng-Chih, Erh-Kun Lai, Kuang-Yeu Hsieh, et al.. (2007). A Study on the Erase and Retention Mechanisms for MONOS, MANOS, and BE-SONOS Non-Volatile Memory Devices. 1–2. 8 indexed citations
17.
Hsu, Tzu‐Hsuan, Hang-Ting Lue, Erh-Kun Lai, et al.. (2007). A High-Speed BE-SONOS NAND Flash Utilizing the Field-Enhancement Effect of FinFET. 913–916. 34 indexed citations
18.
Lue, Hang-Ting, Yi‐Hsuan Hsiao, Pei-Ying Du, et al.. (2006). A novel buried-channel FinFET BE-SONOS NAND Flash with improved memory window and cycling endurance. Symposium on VLSI Technology. 224–225. 5 indexed citations
19.
Lai, Erh-Kun, Hang-Ting Lue, Yi‐Hsuan Hsiao, et al.. (2006). A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory. 1–4. 51 indexed citations
20.
Hsieh, Jung-Yu, et al.. (2005). Dual gate oxide integrity improvement by implementing nitrogen implantation technology. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 237(1-2). 183–187.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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