Pei-Ying Du

793 total citations
55 papers, 591 citations indexed

About

Pei-Ying Du is a scholar working on Electrical and Electronic Engineering, Computer Networks and Communications and Materials Chemistry. According to data from OpenAlex, Pei-Ying Du has authored 55 papers receiving a total of 591 indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Electrical and Electronic Engineering, 23 papers in Computer Networks and Communications and 23 papers in Materials Chemistry. Recurrent topics in Pei-Ying Du's work include Semiconductor materials and devices (43 papers), Advanced Data Storage Technologies (22 papers) and Advanced Memory and Neural Computing (21 papers). Pei-Ying Du is often cited by papers focused on Semiconductor materials and devices (43 papers), Advanced Data Storage Technologies (22 papers) and Advanced Memory and Neural Computing (21 papers). Pei-Ying Du collaborates with scholars based in Taiwan, United States and Switzerland. Pei-Ying Du's co-authors include Hang-Ting Lue, Chih-Yuan Lu, Chih‐Yuan Lu, Wei-Chen Chen, Kuang-Yeu Hsieh, Tzu‐Hsuan Hsu, Szu-Yu Wang, Chih-Chang Hsieh, Yen-Hao Shih and Rich Liu and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and IEEE Transactions on Device and Materials Reliability.

In The Last Decade

Pei-Ying Du

48 papers receiving 571 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Pei-Ying Du Taiwan 15 527 217 154 44 41 55 591
E. Camerlenghi Italy 7 506 1.0× 152 0.7× 256 1.7× 78 1.8× 35 0.9× 14 703
Rich Liu Taiwan 17 803 1.5× 257 1.2× 182 1.2× 23 0.5× 72 1.8× 59 866
Chilhee Chung South Korea 13 576 1.1× 255 1.2× 121 0.8× 62 1.4× 45 1.1× 46 660
P. Cappelletti Italy 15 483 0.9× 185 0.9× 87 0.6× 40 0.9× 31 0.8× 34 559
Yen-Hao Shih Taiwan 17 647 1.2× 239 1.1× 268 1.7× 85 1.9× 62 1.5× 44 792
Kyung‐Chang Ryoo South Korea 13 596 1.1× 341 1.6× 76 0.5× 44 1.0× 35 0.9× 42 683
O. Khouri Italy 7 218 0.4× 104 0.5× 134 0.9× 72 1.6× 21 0.5× 18 317
Jungdal Choi South Korea 13 682 1.3× 122 0.6× 382 2.5× 58 1.3× 29 0.7× 26 849
K. Yahashi Japan 5 452 0.9× 93 0.4× 181 1.2× 39 0.9× 41 1.0× 7 553
D. Mills United States 6 548 1.0× 186 0.9× 259 1.7× 210 4.8× 15 0.4× 9 687

Countries citing papers authored by Pei-Ying Du

Since Specialization
Citations

This map shows the geographic impact of Pei-Ying Du's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Pei-Ying Du with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Pei-Ying Du more than expected).

Fields of papers citing papers by Pei-Ying Du

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Pei-Ying Du. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Pei-Ying Du. The network helps show where Pei-Ying Du may publish in the future.

Co-authorship network of co-authors of Pei-Ying Du

This figure shows the co-authorship network connecting the top 25 collaborators of Pei-Ying Du. A scholar is included among the top collaborators of Pei-Ying Du based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Pei-Ying Du. Pei-Ying Du is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
3.
Hsu, Tzu‐Hsuan, Hang-Ting Lue, Pei-Ying Du, et al.. (2020). A Comprehensive Study of Double-Density Hemi-Cylindrical (HC) 3-D NAND Flash. IEEE Transactions on Electron Devices. 67(12). 5362–5367. 4 indexed citations
4.
Hsu, Tzu‐Hsuan, Hang-Ting Lue, Pei-Ying Du, et al.. (2019). Study of Self-Healing 3D NAND Flash with Micro Heater to Improve the Performances and Lifetime for Fast NAND in NVDIMM Applications. 1–4. 6 indexed citations
6.
Khwa, Win-San, M. BrightSky, Pei-Ying Du, et al.. (2015). A Procedure to Reduce Cell Variation in Phase Change Memory for Improving Multi-Level-Cell Performances. 1–4. 2 indexed citations
8.
Lue, Hang-Ting, et al.. (2013). A novel bit alterable 3D NAND flash using junction-free p-channel device with band-to-band tunneling induced hot-electron programming. Symposium on VLSI Technology. 5 indexed citations
9.
Du, Pei-Ying, Tzu‐Hsuan Hsu, Wei-Chen Chen, et al.. (2013). Increasing VG-type 3D NAND flash cell density by using ultra-thin poly-silicon channels. 139–142. 5 indexed citations
10.
Cheng, Huai‐Yu, M. BrightSky, Simone Raoux, et al.. (2013). Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application. 30.6.1–30.6.4. 26 indexed citations
12.
Kim, Sang‐Bum, Pei-Ying Du, Jing Li, et al.. (2012). Optimization of programming current on endurance of phase change memory. 1–2. 3 indexed citations
13.
Du, Pei-Ying, Jau-Yi Wu, Tzu‐Hsuan Hsu, et al.. (2012). The impact of melting during reset operation on the reliability of phase change memory. 6C.2.1–6C.2.6. 4 indexed citations
14.
Lung, H.L., M. Breitwisch, J.‐Y. Wu, et al.. (2011). A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systems. Symposium on VLSI Technology. 2011. 98–99. 8 indexed citations
15.
Lue, Hang-Ting, Pei-Ying Du, Tzu‐Hsuan Hsu, et al.. (2009). A novel planar floating-gate (FG) / charge-trapping (CT) NAND device using BE-SONOS inter-poly dielectric (IPD). 1–4. 1 indexed citations
16.
Du, Pei-Ying, et al.. (2009). Pulse-$IV$ Characterization of Charge-Transient Behavior of SONOS-Type Devices With or Without a Thin Tunnel Oxide. IEEE Electron Device Letters. 30(4). 380–382. 1 indexed citations
17.
Wang, Szu-Yu, Hang-Ting Lue, Pei-Ying Du, et al.. (2008). Reliability and Processing Effects of Bandgap-Engineered SONOS (BE-SONOS) Flash Memory and Study of the Gate-Stack Scaling Capability. IEEE Transactions on Device and Materials Reliability. 8(2). 416–425. 14 indexed citations
18.
Du, Pei-Ying, Hang-Ting Lue, Szu-Yu Wang, et al.. (2008). A Study of Gate-Sensing and Channel-Sensing (GSCS) Transient Analysis Method Part II: Study of the Intra-Nitride Behaviors and Reliability of SONOS-Type Devices. IEEE Transactions on Electron Devices. 55(8). 2229–2237. 14 indexed citations
19.
20.
Lue, Hang-Ting, Yi‐Hsuan Hsiao, Pei-Ying Du, et al.. (2006). A novel buried-channel FinFET BE-SONOS NAND Flash with improved memory window and cycling endurance. Symposium on VLSI Technology. 224–225. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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