G. Busatto

1.5k total citations
105 papers, 1.1k citations indexed

About

G. Busatto is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Mechanical Engineering. According to data from OpenAlex, G. Busatto has authored 105 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 102 papers in Electrical and Electronic Engineering, 9 papers in Condensed Matter Physics and 4 papers in Mechanical Engineering. Recurrent topics in G. Busatto's work include Silicon Carbide Semiconductor Technologies (73 papers), Electrostatic Discharge in Electronics (44 papers) and Semiconductor materials and devices (33 papers). G. Busatto is often cited by papers focused on Silicon Carbide Semiconductor Technologies (73 papers), Electrostatic Discharge in Electronics (44 papers) and Semiconductor materials and devices (33 papers). G. Busatto collaborates with scholars based in Italy, United States and Switzerland. G. Busatto's co-authors include Francesco Iannuzzo, C. Abbate, F. Velardi, A. Sanseverino, J. Wyss, A. Porzio, Giuseppe Currò, Gianpaolo Vitale, Nicola Delmonte and P. Cova and has published in prestigious journals such as IEEE Transactions on Power Electronics, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

G. Busatto

97 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Busatto Italy 19 1.1k 143 74 45 41 105 1.1k
Jiahao Niu United States 16 661 0.6× 158 1.1× 75 1.0× 37 0.8× 97 2.4× 39 761
Tatsuhiko Fujihira Japan 11 1.0k 0.9× 142 1.0× 33 0.4× 84 1.9× 33 0.8× 32 1.1k
Nirmana Perera Switzerland 12 447 0.4× 178 1.2× 47 0.6× 50 1.1× 61 1.5× 39 507
Armin Jafari Switzerland 11 386 0.4× 148 1.0× 37 0.5× 45 1.0× 21 0.5× 29 442
Edward Van Brunt United States 20 1.6k 1.5× 56 0.4× 45 0.6× 92 2.0× 72 1.8× 58 1.6k
Kawin Surakitbovorn United States 12 404 0.4× 142 1.0× 33 0.4× 73 1.6× 25 0.6× 29 477
Zhong Chen United States 13 510 0.5× 54 0.4× 27 0.4× 87 1.9× 39 1.0× 59 549
Kimimori Hamada Japan 18 931 0.9× 44 0.3× 101 1.4× 81 1.8× 15 0.4× 46 965
Gang Lyu China 12 575 0.5× 261 1.8× 23 0.3× 69 1.5× 57 1.4× 63 646
Nadir Idir France 20 1.5k 1.4× 99 0.7× 130 1.8× 24 0.5× 148 3.6× 87 1.6k

Countries citing papers authored by G. Busatto

Since Specialization
Citations

This map shows the geographic impact of G. Busatto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Busatto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Busatto more than expected).

Fields of papers citing papers by G. Busatto

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Busatto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Busatto. The network helps show where G. Busatto may publish in the future.

Co-authorship network of co-authors of G. Busatto

This figure shows the co-authorship network connecting the top 25 collaborators of G. Busatto. A scholar is included among the top collaborators of G. Busatto based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Busatto. G. Busatto is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Busatto, G., et al.. (2024). A Simple and Low Cost Overcurrent Protection System Based on Commercial Shunt for Wide-Bandgap Devices. Fraunhofer-Publica (Fraunhofer-Gesellschaft).
4.
Anderson, Jon Azurza, et al.. (2023). All‐SiC 99.4%‐efficient three‐phase T‐type inverter with DC‐side common‐mode filter. Electronics Letters. 59(12). 6 indexed citations
5.
Abbate, C., et al.. (2017). Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. Microelectronics Reliability. 76-77. 314–320. 16 indexed citations
6.
Abbate, C., et al.. (2014). Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit. 1–8. 1 indexed citations
7.
Abbate, C., G. Busatto, P. Cova, et al.. (2014). Thermal damage in SiC Schottky diodes induced by SE heavy ions. Microelectronics Reliability. 54(9-10). 2200–2206. 30 indexed citations
8.
Fischer, Horst, et al.. (2013). High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit. 46. 183–188. 9 indexed citations
9.
Busatto, G., D. Bisello, Giuseppe Currò, et al.. (2011). A new test methodology for an exhaustive study of single-event-effects on power MOSFETs. Microelectronics Reliability. 51(9-11). 1995–1998. 2 indexed citations
10.
Busatto, G., C. Abbate, & Francesco Iannuzzo. (2010). Non destructive SOA testing of power modules. 1–6. 6 indexed citations
11.
Busatto, G., Giuseppe Currò, Francesco Iannuzzo, et al.. (2010). Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectronics Reliability. 50(9-11). 1842–1847. 15 indexed citations
12.
Abbate, C., G. Busatto, & Francesco Iannuzzo. (2009). The effects of the stray elements on the failure of parallel connected IGBTs during Turn-Off. European Conference on Power Electronics and Applications. 1–9. 1 indexed citations
13.
Iannuzzo, Francesco, et al.. (2008). Experimental analysis of energy consumption by MobileDDR memory for mobile applications. 14. 1686–1691. 1 indexed citations
14.
Abbate, C., et al.. (2006). Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules. 1–6. 2 indexed citations
15.
Abbate, C., et al.. (2006). The high frequency behaviour of high voltage and current IGBT modules. Microelectronics Reliability. 46(9-11). 1848–1853. 3 indexed citations
16.
Busatto, G., G. Ferla, P. G. Fallica, & Salvatore Musumeci. (2005). Switching performances of enhanced gain bipolar mode field effect transistor (BMFET). 6. 270–276. 1 indexed citations
17.
Busatto, G., et al.. (2002). Analysis of second breakdown limits in RBSOA of bipolar transistors. European Conference on Power Electronics and Applications. 101–106.
18.
Busatto, G., et al.. (2002). Series connection of IGBTs in hard-switching applications. 2. 825–830. 34 indexed citations
19.
Busatto, G., et al.. (1996). BMFET versus BJT in reverse bias safe operations. Microelectronics Journal. 27(2-3). 243–250. 1 indexed citations
20.
Busatto, G.. (1993). Physical modeling of bipolar mode JFET for CAE/CAD simulation. IEEE Transactions on Power Electronics. 8(4). 368–375. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026