M. Farahmand

1.1k total citations
21 papers, 897 citations indexed

About

M. Farahmand is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, M. Farahmand has authored 21 papers receiving a total of 897 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 11 papers in Condensed Matter Physics and 9 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in M. Farahmand's work include GaN-based semiconductor devices and materials (11 papers), Silicon Carbide Semiconductor Technologies (9 papers) and Semiconductor Quantum Structures and Devices (6 papers). M. Farahmand is often cited by papers focused on GaN-based semiconductor devices and materials (11 papers), Silicon Carbide Semiconductor Technologies (9 papers) and Semiconductor Quantum Structures and Devices (6 papers). M. Farahmand collaborates with scholars based in United States, Netherlands and Italy. M. Farahmand's co-authors include Kevin F. Brennan, P. P. Ruden, John D. Albrecht, E. Bellotti, C. Garetto, Enrico Ghillino, Michele Goano, Giovanni Ghione, A.J.J. Bos and C.W.E. van Eijk and has published in prestigious journals such as Journal of Applied Physics, Journal of Physics Condensed Matter and IEEE Transactions on Electron Devices.

In The Last Decade

M. Farahmand

20 papers receiving 836 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Farahmand United States 11 737 577 334 240 142 21 897
M. E. Klausmeier-Brown United States 14 228 0.3× 316 0.5× 253 0.8× 99 0.4× 131 0.9× 32 575
Y. Kuriyama Japan 12 206 0.3× 150 0.3× 97 0.3× 114 0.5× 121 0.9× 81 588
V. L. Alperovich Russia 16 104 0.1× 271 0.5× 419 1.3× 91 0.4× 93 0.7× 73 666
V. Bharadwaj United States 10 133 0.2× 203 0.4× 246 0.7× 142 0.6× 70 0.5× 46 520
D. B. Laubacher United States 10 138 0.2× 147 0.3× 191 0.6× 89 0.4× 38 0.3× 20 536
R.E. Enstrom United States 14 122 0.2× 302 0.5× 304 0.9× 70 0.3× 65 0.5× 40 578
J. Hallais France 15 210 0.3× 567 1.0× 495 1.5× 82 0.3× 212 1.5× 26 824
D. Seghier Iceland 11 196 0.3× 270 0.5× 142 0.4× 136 0.6× 203 1.4× 50 470
E. Gaubas Lithuania 17 333 0.5× 931 1.6× 497 1.5× 135 0.6× 277 2.0× 149 1.2k
Z. Yusof United States 13 520 0.7× 306 0.5× 385 1.2× 414 1.7× 85 0.6× 46 914

Countries citing papers authored by M. Farahmand

Since Specialization
Citations

This map shows the geographic impact of M. Farahmand's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Farahmand with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Farahmand more than expected).

Fields of papers citing papers by M. Farahmand

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Farahmand. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Farahmand. The network helps show where M. Farahmand may publish in the future.

Co-authorship network of co-authors of M. Farahmand

This figure shows the co-authorship network connecting the top 25 collaborators of M. Farahmand. A scholar is included among the top collaborators of M. Farahmand based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Farahmand. M. Farahmand is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nardo, Laura De & M. Farahmand. (2016). Operation of gas electron multiplier (GEM) with propane gas at low pressure and comparison with tissue-equivalent gas mixtures. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 819. 154–162. 5 indexed citations
2.
Farahmand, M. & Laura De Nardo. (2015). MICRODOSIMETRIC MEASUREMENTS OF A TISSUE-EQUIVALENT PROPORTIONAL COUNTER BASED ON A GAS ELECTRON MULTIPLIER DOWN TO 140 NM SIMULATED SITE SIZES. Radiation Protection Dosimetry. 171(3). ncv399–ncv399. 2 indexed citations
3.
Farahmand, M., A.J. Boston, A.N. Grint, et al.. (2007). Detection of explosive substances by tomographic inspection using neutron and gamma-ray spectroscopy. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 261(1-2). 396–400. 9 indexed citations
4.
Farahmand, M., A.J.J. Bos, Laura De Nardo, & C.W.E. van Eijk. (2004). First microdosimetric measurements with a TEPC based on a GEM. Radiation Protection Dosimetry. 110(1-4). 839–843. 26 indexed citations
5.
Farahmand, M.. (2004). A novel tissue-equivalent proportional counter based on a gas electron multiplier. Data Archiving and Networked Services (DANS). 6 indexed citations
6.
Farahmand, M., A.J.J. Bos, & C.W.E. van Eijk. (2003). Gas electron multiplier (GEM) operation with tissue-equivalent gases at various pressures. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 506(1-2). 160–165. 20 indexed citations
7.
Farahmand, M., A.J.J. Bos, J. Huizenga, Laura De Nardo, & C.W.E. van Eijk. (2003). Design of a new tissue-equivalent proportional counter based on a gas electron multiplier. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 509(1-3). 262–267. 19 indexed citations
8.
Weber, Michael T., et al.. (2002). Theoretical Study of RF Breakdown in GaN Wurtzite and Zincblende Phase MESFETs. Journal of Computational Electronics. 1(1-2). 235–239.
9.
Brennan, Kevin F., E. Bellotti, M. Farahmand, et al.. (2001). Monte Carlo Modeling of Wurtzite and 4H PhaseSemiconducting Materials. VLSI design. 13(1-4). 117–124. 3 indexed citations
10.
Farahmand, M., C. Garetto, E. Bellotti, et al.. (2001). Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries. IEEE Transactions on Electron Devices. 48(3). 535–542. 364 indexed citations
11.
Farahmand, M., Kevin F. Brennan, E. Gebara, et al.. (2001). Theoretical study of RF-breakdown in bulk GaN and GaN MESFETs. IEEE Transactions on Electron Devices. 48(9). 1844–1849. 5 indexed citations
12.
Bellotti, E., M. Farahmand, Michele Goano, et al.. (2001). Simulation of Carrier Transport in Wide Band Gap Semiconductors. International Journal of High Speed Electronics and Systems. 11(2). 525–584. 9 indexed citations
13.
Brennan, Kevin F., E. Bellotti, M. Farahmand, et al.. (2000). Monte Carlo simulation of noncubic symmetry semiconducting materials and devices. IEEE Transactions on Electron Devices. 47(10). 1882–1890. 20 indexed citations
14.
Bellotti, E., M. Farahmand, Hans‐Erik Nilsson, Kevin F. Brennan, & P. P. Ruden. (2000). Monte Carlo Based Calculation of Transport Parameters for Wide Band Gap Device Simulation. MRS Proceedings. 622. 1 indexed citations
15.
Brennan, Kevin F., et al.. (2000). Materials theory based modeling of wide band gap semiconductors: from basic properties to devices. Solid-State Electronics. 44(2). 195–204. 31 indexed citations
16.
Farahmand, M. & Kevin F. Brennan. (2000). Comparison between wurtzite phase and zincblende phase GaN MESFETs using a full band Monte Carlo simulation. IEEE Transactions on Electron Devices. 47(3). 493–497. 15 indexed citations
17.
Farahmand, M. & Kevin F. Brennan. (1999). Full band Monte Carlo simulation of zincblende GaN MESFET's including realistic impact ionization rates. IEEE Transactions on Electron Devices. 46(7). 1319–1325. 28 indexed citations
18.
Albrecht, John D., et al.. (1998). Electron transport characteristics of GaN for high temperature device modeling. Journal of Applied Physics. 83(9). 4777–4781. 283 indexed citations
19.
Albrecht, John D., et al.. (1998). Monte Carlo calculation of electron transport properties of bulk AlN. Journal of Applied Physics. 83(3). 1446–1449. 35 indexed citations
20.
Albrecht, John D., et al.. (1997). Monte Carlo Calculation Of High- And Low-Field AlxGa1−xN Electron Transport Characteristics. MRS Proceedings. 482. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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