D. Sinitsky

981 total citations
16 papers, 679 citations indexed

About

D. Sinitsky is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, D. Sinitsky has authored 16 papers receiving a total of 679 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 1 paper in Electronic, Optical and Magnetic Materials. Recurrent topics in D. Sinitsky's work include Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (15 papers) and Low-power high-performance VLSI design (4 papers). D. Sinitsky is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (15 papers) and Low-power high-performance VLSI design (4 papers). D. Sinitsky collaborates with scholars based in United States, Italy and Taiwan. D. Sinitsky's co-authors include Jeffrey Bokor, F. Assaderaghi, S. Parke, P.K. Ko, Chenming Hu, Chenming Hu, P.K. Ko, Chenming Hu, C. Hu and K. Noda and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Solid-State Electronics.

In The Last Decade

D. Sinitsky

16 papers receiving 636 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. Sinitsky United States	11	654	236	44	28	27	16	679
J.P. Tero Netherlands	6	430 0.7×	369 1.6×	18 0.4×	15 0.5×	23 0.9×	6	470
R.G.H. Eschauzier Netherlands	8	690 1.1×	620 2.6×	27 0.6×	19 0.7×	24 0.9×	8	735
Christian Fayomi Canada	13	367 0.6×	337 1.4×	30 0.7×	11 0.4×	9 0.3×	36	397
Ron Hogervorst Netherlands	11	797 1.2×	711 3.0×	31 0.7×	19 0.7×	32 1.2×	16	855
Amy Brokaw United States	10	566 0.9×	449 1.9×	13 0.3×	24 0.9×	24 0.9×	18	600
S.L.J. Gierkink Netherlands	13	1.1k 1.7×	458 1.9×	12 0.3×	40 1.4×	5 0.2×	33	1.2k
G. Palmisano Italy	12	372 0.6×	297 1.3×	14 0.3×	15 0.5×	10 0.4×	32	383
Pradip Mandal India	11	380 0.6×	147 0.6×	50 1.1×	5 0.2×	26 1.0×	68	412
Tony T. Kim Singapore	9	294 0.4×	74 0.3×	116 2.6×	33 1.2×	15 0.6×	41	320
T. Nirschl Germany	12	1.1k 1.7×	451 1.9×	83 1.9×	30 1.1×	4 0.1×	22	1.1k

Countries citing papers authored by D. Sinitsky

Since Specialization

Citations

This map shows the geographic impact of D. Sinitsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Sinitsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Sinitsky more than expected).

Fields of papers citing papers by D. Sinitsky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Sinitsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Sinitsky. The network helps show where D. Sinitsky may publish in the future.

Co-authorship network of co-authors of D. Sinitsky

This figure shows the co-authorship network connecting the top 25 collaborators of D. Sinitsky. A scholar is included among the top collaborators of D. Sinitsky based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Sinitsky. D. Sinitsky is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

16 of 16 papers shown

Tu, R., D. Sinitsky, F. Assaderaghi, C. Wann, & Chenming Hu. (2005). Simulation Of Floating Body Effect In SOI Circuits Using BSIM3SOI. 339–342. 2 indexed citations

Sinitsky, D., et al.. (2003). SER reliability of 1TRAM designs. 226–229. 1 indexed citations

Assaderaghi, F., D. Sinitsky, S. Parke, et al.. (2002). A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation. 809–812. 118 indexed citations

Crowder, S., et al.. (2002). Integration of trench DRAM into a high-performance 0.18 μm logic technology with copper BEOL. 1017–1020. 11 indexed citations

Hu, Chenming, et al.. (2002). Channel doping engineering of MOSFET with adaptable threshold voltage using body effect for low voltage and low power applications. 159–163. 21 indexed citations

Hargrove, M., S. Crowder, E. Nowak, et al.. (2002). High-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delay. 627–630. 26 indexed citations

Assaderaghi, F., et al.. (2002). Saturation velocity and velocity overshoot of inversion layer electrons and holes. 479–482. 10 indexed citations

Orshansky, Michael, et al.. (2002). Impact of velocity overshoot, polysilicon depletion, and inversion layer quantization on NMOSFET scaling. 18–19. 1 indexed citations

Sinitsky, D., S.K.H. Fung, Samuel Tang, et al.. (1998). A dynamic depletion SOI MOSFET model for SPICE. 114–115. 7 indexed citations

10.

Sinitsky, D., et al.. (1998). Simulation of SOI devices and circuits using BSIM3SOI. IEEE Electron Device Letters. 19(9). 323–325. 9 indexed citations

11.

Assaderaghi, F., et al.. (1997). High-field transport of inversion-layer electrons and holes including velocity overshoot. IEEE Transactions on Electron Devices. 44(4). 664–671. 25 indexed citations

12.

Sinitsky, D., et al.. (1997). AC output conductance of SOI MOSFETs and impact on analog applications. IEEE Electron Device Letters. 18(2). 36–38. 14 indexed citations

13.

Sinitsky, D., F. Assaderaghi, C. Hu, & Jeffrey Bokor. (1997). High field hole velocity and velocity overshoot in silicon inversion layers. IEEE Electron Device Letters. 18(2). 54–56. 16 indexed citations

14.

Sinitsky, D., F. Assaderaghi, Michael Orshansky, Jeffrey Bokor, & Canbin Hu. (1997). Velocity overshoot of electrons and holes in Si inversion layers. Solid-State Electronics. 41(8). 1119–1125. 11 indexed citations

15.

Assaderaghi, F., D. Sinitsky, S. Parke, et al.. (1997). Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI. IEEE Transactions on Electron Devices. 44(3). 414–422. 317 indexed citations

16.

Assaderaghi, F., S. Parke, D. Sinitsky, et al.. (1994). A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation. IEEE Electron Device Letters. 15(12). 510–512. 90 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact