D. Sinitsky

981 citations

16 papers · 679 indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 5%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Low-power high-performance VLSI design
- Radio Frequency Integrated Circuit Design
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
Hardware and Architecture top 10%

Papers in ⓘ

Electrical and Electronic Engineering 16
- Semiconductor materials and devices 15
- Advancements in Semiconductor Devices and Circuit Design 15
- Low-power high-performance VLSI design 4
- Silicon Carbide Semiconductor Technologies 3
- Silicon and Solar Cell Technologies 3
- Integrated Circuits and Semiconductor Failure Analysis 2
Atomic and Molecular Physics, and Optics 2
- Quantum and electron transport phenomena 2

Co-authors: Jeffrey Bokor (10 shared papers)F. Assaderaghi (10 shared papers)S. Parke (3 shared papers)P.K. Ko (4 shared papers)Chenming Hu (7 shared papers)Chenming Hu (2 shared papers)P.K. Ko (2 shared papers)K. Noda (1 shared paper)
Journals: IEEE Electron Device Letters (4 papers)IEEE Transactions on Electron Devices (2 papers)Solid-State Electronics (1 paper)
Partner nations: United States Italy Taiwan

In The Last Decade

D. Sinitsky

16 papers receiving 636 citations

Peers

Countries citing papers authored by D. Sinitsky

Since Specialization

Citations

This map shows the geographic impact of D. Sinitsky's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Sinitsky with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Sinitsky more than expected).

Fields of papers citing papers by D. Sinitsky

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Sinitsky. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Sinitsky. The network helps show where D. Sinitsky may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Sinitsky, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Sinitsky Line = papers co-authored together D. Sinitsky links everyone, so they are left out of the graph.

All Works

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16 of 16 papers shown

#	Work
1	Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI IEEE Transactions on Electron Devices ·F. Assaderaghi, D. Sinitsky, S. Parke, Jeffrey Bokor, P.K. Ko, Chenming Hu	1997	317
2	A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation F. Assaderaghi, D. Sinitsky, S. Parke, Jeffrey Bokor, P.K. Ko, Chenming Hu	2002	118
3	A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation IEEE Electron Device Letters ·F. Assaderaghi, S. Parke, D. Sinitsky, Jeffrey Bokor, P.K. Ko, Chenming Hu	1994	90
4	High-performance sub-0.08 μm CMOS with dual gate oxide and 9.7 ps inverter delay M. Hargrove, S. Crowder, E. Nowak, R. Logan, L.K. Han, H. Ng, A. Ray, D. Sinitsky, P. Smeys, F Guarin, James Oberschmidt, E.F. Crabbé, D. S. Yee, L.T. Su	2002	26
5	High-field transport of inversion-layer electrons and holes including velocity overshoot IEEE Transactions on Electron Devices ·F. Assaderaghi, D. Sinitsky, Jeffrey Bokor, P.K. Ko, Henry T. Gaw, Chenming Hu	1997	25
6	Channel doping engineering of MOSFET with adaptable threshold voltage using body effect for low voltage and low power applications H.C. Wann, Chenming Hu, K. Noda, D. Sinitsky, F. Assaderaghi, Jeffrey Bokor	2002	21
7	High field hole velocity and velocity overshoot in silicon inversion layers IEEE Electron Device Letters ·D. Sinitsky, F. Assaderaghi, C. Hu, Jeffrey Bokor	1997	16
8	AC output conductance of SOI MOSFETs and impact on analog applications IEEE Electron Device Letters ·D. Sinitsky, R. Tu, Chunlin Liang, Mansun Chan, Jeffrey Bokor, Chenming Hu	1997	14
9	Integration of trench DRAM into a high-performance 0.18 μm logic technology with copper BEOL S. Crowder, R. Hannon, H. Ho, D. Sinitsky, Shuo‐Jye Wu, Kevin Winstel, B. Khan, S. R. Stiffler, Shankar S. Iyer	2002	11
10	Velocity overshoot of electrons and holes in Si inversion layers Solid-State Electronics ·D. Sinitsky, F. Assaderaghi, Michael Orshansky, Jeffrey Bokor, Canbin Hu	1997	11
11	Saturation velocity and velocity overshoot of inversion layer electrons and holes F. Assaderaghi, D. Sinitsky, Henry T. Gaw, Jeffrey Bokor, P.K. Ko, Chenming Hu	2002	10
12	Simulation of SOI devices and circuits using BSIM3SOI IEEE Electron Device Letters ·D. Sinitsky, Samuel Tang, A. Jangity, F. Assaderaghi, G. Shahidi, Chenming Hu	1998	9
13	A dynamic depletion SOI MOSFET model for SPICE D. Sinitsky, S.K.H. Fung, Samuel Tang, Pin Su, Mansun Chan, P.K. Ko, Chenming Hu	1998	7
14	Simulation Of Floating Body Effect In SOI Circuits Using BSIM3SOI R. Tu, D. Sinitsky, F. Assaderaghi, C. Wann, Chenming Hu	2005	2
15	SER reliability of 1TRAM designs D. Sinitsky, Shin-ing Peng, J. Wang, T.C. Ong, E. Chen, Fu-Chieh Hsu	2003	1
16	Impact of velocity overshoot, polysilicon depletion, and inversion layer quantization on NMOSFET scaling Michael Orshansky, D. Sinitsky, P. Scrobahaci, Jeffrey Bokor, Chenming Hu	2002	1

About D. Sinitsky

D. Sinitsky is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Biomedical Engineering and Infectious Diseases, having authored 16 papers that have together received 679 indexed citations. Recurring topics across this work include Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers), Low-power high-performance VLSI design (4 papers), Silicon Carbide Semiconductor Technologies (3 papers), Silicon and Solar Cell Technologies (3 papers), Quantum and electron transport phenomena (2 papers), Integrated Circuits and Semiconductor Failure Analysis (2 papers) and Copper Interconnects and Reliability (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (654 citations), Hardware and Architecture (44 citations), Biomedical Engineering (236 citations), Cellular and Molecular Neuroscience (22 citations) and Bioengineering (6 citations). D. Sinitsky has collaborated with scholars based in United States, Italy and Taiwan. Frequent co-authors include Jeffrey Bokor, F. Assaderaghi, S. Parke, P.K. Ko, Chenming Hu, Chenming Hu, P.K. Ko, K. Noda, Chenming Hu and C. Hu. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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