V. Kannan

550 total citations
34 papers, 467 citations indexed

About

V. Kannan is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, V. Kannan has authored 34 papers receiving a total of 467 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 11 papers in Materials Chemistry and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in V. Kannan's work include Advanced Memory and Neural Computing (17 papers), Semiconductor materials and devices (17 papers) and ZnO doping and properties (5 papers). V. Kannan is often cited by papers focused on Advanced Memory and Neural Computing (17 papers), Semiconductor materials and devices (17 papers) and ZnO doping and properties (5 papers). V. Kannan collaborates with scholars based in South Korea, United States and South Africa. V. Kannan's co-authors include CH. V. V. Ramana, Hyun‐Chang Park, Hyun‐Seok Kim, V. Senthil Kumar, A. Kathalingam, Jin‐Koo Rhee, Akbar I. Inamdar, Hyungsang Kim, Hyunsik Im and F. A. Stevie and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and ACS Applied Materials & Interfaces.

In The Last Decade

V. Kannan

33 papers receiving 445 citations

Peers

V. Kannan
Shuyao Si China
Christian Rodenbücher Germany
Nadezhda A. Nebogatikova Russia
Alexander Zintler Germany
Norihisa Tanio Japan
Byungki Jung United States
Zhikai Gan China
Nobuyoshi Awaya Japan
Yoonho Ahn South Korea
Yang Ren China
Shuyao Si China
V. Kannan
Citations per year, relative to V. Kannan V. Kannan (= 1×) peers Shuyao Si

Countries citing papers authored by V. Kannan

Since Specialization
Citations

This map shows the geographic impact of V. Kannan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Kannan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Kannan more than expected).

Fields of papers citing papers by V. Kannan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Kannan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Kannan. The network helps show where V. Kannan may publish in the future.

Co-authorship network of co-authors of V. Kannan

This figure shows the co-authorship network connecting the top 25 collaborators of V. Kannan. A scholar is included among the top collaborators of V. Kannan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Kannan. V. Kannan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Tam, C. T., et al.. (2024). Shrinkage Cracking Potential of Lightweight Aggregate Concrete. Journal of Physics Conference Series. 2779(1). 12067–12067. 1 indexed citations
2.
Kannan, V., Hyun‐Jung Kim, Hyun‐Chang Park, & Hyun‐Seok Kim. (2018). Single-Step Direct Hydrothermal Growth of NiMoO4 Nanostructured Thin Film on Stainless Steel for Supercapacitor Electrodes. Nanomaterials. 8(8). 563–563. 15 indexed citations
3.
Kannan, V., Jong-Hyeok Choi, Hyun‐Chang Park, & Hyun‐Seok Kim. (2018). Ultrahigh supercapacitance in cobalt oxide nanorod film grown by oblique angle deposition technique. Current Applied Physics. 18(11). 1399–1402. 3 indexed citations
4.
Kannan, V., Hyun‐Seok Kim, & Hyun‐Chang Park. (2016). High speed switching in quantum Dot/Ti-TiOx nonvolatile memory device. Electronic Materials Letters. 12(2). 323–327. 5 indexed citations
5.
Kannan, V., Hyun‐Seok Kim, & Hyun‐Chang Park. (2016). Non-volatile resistive memory device fabricated from CdSe quantum dot embedded in thermally grown In2O3 nanostructure by oblique angle deposition. Physics Letters A. 380(44). 3743–3747. 6 indexed citations
6.
7.
Ramana, CH. V. V., M. Moodley, & V. Kannan. (2014). Electrical Characteristics of ITO/MEH–PPV/ZnO/Al Structure. Nanoscience and Nanotechnology Letters. 6(3). 238–241. 5 indexed citations
8.
Kannan, V., et al.. (2014). High mobility polymer gated organic field effect transistor using zinc phthalocyanine. Bulletin of Materials Science. 37(1). 95–99. 2 indexed citations
9.
Kannan, V., et al.. (2013). Robust switching characteristics of CdSe/ZnS quantum dot non-volatile memory devices. Physical Chemistry Chemical Physics. 15(30). 12762–12762. 17 indexed citations
10.
Senthilkumar, V., A. Kathalingam, S. Valanarasu, V. Kannan, & Jin‐Koo Rhee. (2013). Bipolar resistive switching of solution processed TiO2–graphene oxide nanocomposite for nonvolatile memory applications. Physics Letters A. 377(37). 2432–2435. 18 indexed citations
11.
Valanarasu, S., et al.. (2012). Thermally stable memory devices using graphene flakes sandwiched polymethyl methacrylate polymer layers. Electronic Materials Letters. 8(6). 649–653. 13 indexed citations
12.
Kannan, V., et al.. (2011). Ultra-fast switching in solution processed quantum dot based non-volatile resistive memory. Applied Physics Letters. 99(14). 27 indexed citations
13.
Kannan, V., et al.. (2011). All-inorganic spin-cast quantum dot based bipolar nonvolatile resistive memory. Journal of Applied Physics. 109(8). 15 indexed citations
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16.
Sahoo, Trilochan, et al.. (2007). Growth of ZnO thin film on p-GaN/sapphire (0001) by simple hydrothermal technique. Journal of Crystal Growth. 310(3). 570–574. 8 indexed citations
17.
Stevie, F. A., et al.. (1995). Applications of focused ion beams in microelectronics production, design and development. Surface and Interface Analysis. 23(2). 61–68. 58 indexed citations
18.
Chittipeddi, S., et al.. (1992). The Effect of Polysilicon Doping (Using Ion Implantation or PBr3 Diffusion or Insitu Doping) on TiSi2 Formation. MRS Proceedings. 260. 2 indexed citations
19.
Hughes, Michael C., et al.. (1990). Characterization of sulfuric acid proton-exchanged lithium niobate. Journal of Applied Physics. 67(2). 627–633. 17 indexed citations
20.
Kannan, V., et al.. (1977). Two-step annealing of arsenic-implanted 〈111〉 silicon. Applied Physics Letters. 31(11). 721–722. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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