J. P. Gowers

919 total citations
29 papers, 723 citations indexed

About

J. P. Gowers is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. P. Gowers has authored 29 papers receiving a total of 723 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 10 papers in Materials Chemistry. Recurrent topics in J. P. Gowers's work include Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and interfaces (9 papers) and Thin-Film Transistor Technologies (8 papers). J. P. Gowers is often cited by papers focused on Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and interfaces (9 papers) and Thin-Film Transistor Technologies (8 papers). J. P. Gowers collaborates with scholars based in United Kingdom, Finland and Netherlands. J. P. Gowers's co-authors include S. D. Brotherton, J. B. Clegg, D. McCulloch, J. R. Ayres, B.A. Joyce, J.H. Neave, M. J. Trainor, P.K. Larsen, J. F. van der Veen and B.A. Joyce and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Surface Science.

In The Last Decade

J. P. Gowers

28 papers receiving 673 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. P. Gowers United Kingdom	16	594	332	297	106	105	29	723
Naoaki Aizaki Japan	14	584 1.0×	316 1.0×	259 0.9×	136 1.3×	57 0.5×	37	709
B. Dietrich Germany	14	640 1.1×	377 1.1×	332 1.1×	230 2.2×	48 0.5×	43	809
C. G. Tuppen United Kingdom	15	612 1.0×	506 1.5×	247 0.8×	92 0.9×	85 0.8×	42	785
H. Lafontaine Canada	14	405 0.7×	318 1.0×	178 0.6×	84 0.8×	34 0.3×	55	524
Z. Liliental United States	8	411 0.7×	192 0.6×	124 0.4×	83 0.8×	26 0.2×	17	525
S. A. Teys Russia	14	277 0.5×	547 1.6×	239 0.8×	123 1.2×	47 0.4×	62	647
P. D. Augustus United Kingdom	14	315 0.5×	273 0.8×	135 0.5×	36 0.3×	56 0.5×	27	450
A. Steckenborn Germany	12	374 0.6×	331 1.0×	126 0.4×	182 1.7×	29 0.3×	18	545
E. Koppensteiner Austria	13	276 0.5×	294 0.9×	191 0.6×	71 0.7×	38 0.4×	27	458
Kuo-Jen Chao United States	10	214 0.4×	514 1.5×	252 0.8×	151 1.4×	32 0.3×	17	666

Countries citing papers authored by J. P. Gowers

Since Specialization

Citations

This map shows the geographic impact of J. P. Gowers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. P. Gowers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. P. Gowers more than expected).

Fields of papers citing papers by J. P. Gowers

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. P. Gowers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. P. Gowers. The network helps show where J. P. Gowers may publish in the future.

Co-authorship network of co-authors of J. P. Gowers

This figure shows the co-authorship network connecting the top 25 collaborators of J. P. Gowers. A scholar is included among the top collaborators of J. P. Gowers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. P. Gowers. J. P. Gowers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Brotherton, S. D., et al.. (2000). Excimer Laser Crystallisation of Poly-Si TFTs for AMLCDs. MRS Proceedings. 621. 9 indexed citations

Brotherton, S. D., J. R. Ayres, Craig A. Fisher, et al.. (1999). Laser crystallised poly-Si TFTs for AMLCDs. Thin Solid Films. 337(1-2). 188–195. 53 indexed citations

Brotherton, S. D., D. McCulloch, J. P. Gowers, J. R. Ayres, & M. J. Trainor. (1997). Influence of melt depth in laser crystallized poly-Si thin film transistors. Journal of Applied Physics. 82(8). 4086–4094. 62 indexed citations

Brotherton, S. D., D. McCulloch, J. B. Clegg, & J. P. Gowers. (1993). Excimer-laser-annealed poly-Si thin-film transistors. IEEE Transactions on Electron Devices. 40(2). 407–413. 132 indexed citations

Ayres, J. R., S. D. Brotherton, J. B. Clegg, A. Gill, & J. P. Gowers. (1989). Defects in tin pre-amorphised p⁺n junctions in silicon. Semiconductor Science and Technology. 4(5). 399–407. 7 indexed citations

Woodbridge, K., J. P. Gowers, Paul F. Fewster, et al.. (1989). Structural and optical properties of III–V quantum wells grown on Si. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(2). 337–340. 4 indexed citations

Pond, R.C., J. P. Gowers, & B.A. Joyce. (1985). Surface structure and the origin of antisite domains in GaAs:Ge epitaxial films. Surface Science. 152-153. 1191–1196. 16 indexed citations

Pond, R.C., J. P. Gowers, & B.A. Joyce. (1985). Surface structure and the origin of antisite domains in GaAs: Ge epitaxial films. Surface Science Letters. 152-153. A169–A169. 6 indexed citations

Smith, David J., et al.. (1984). Transmission electron microscopy and high resolution electron microscopy studies of shallow (R p∼20 nm) As and B implanted and electron beam annealed silicon. Applied Physics Letters. 44(11). 1081–1083. 3 indexed citations

10.

Woodbridge, K., P. Dawson, J. P. Gowers, & C. T. Foxon. (1984). Structural and optical properties of GaAs–AlxGa1−xAs quantum wells. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 2(2). 163–166. 6 indexed citations

11.

Pond, R.C., J. P. Gowers, D. B. Holt, et al.. (1983). A General Treatment of Antiphase Domain Formation and Identification at Polar-Nonpolar Semiconductor Interfaces.. MRS Proceedings. 25. 7 indexed citations

12.

Gowers, J. P.. (1983). TEM image contrast from clustering in Ga-In containing III?V alloys. Applied Physics A. 31(1). 23–27. 23 indexed citations

13.

Neave, J.H., P.K. Larsen, B.A. Joyce, J. P. Gowers, & J. F. van der Veen. (1983). Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and films. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 1(3). 668–674. 78 indexed citations

14.

Harris, J. J., B.A. Joyce, J. P. Gowers, & J.H. Neave. (1982). Nucleation effects during MBE growth of Sn-Doped GaAs. Applied Physics A. 28(1). 63–71. 36 indexed citations

15.

Ralph, J. E., et al.. (1982). Imaging of domains and grain boundaries in a ferroelectric semiconducting ceramic. Applied Physics Letters. 41(4). 343–345. 6 indexed citations

16.

Woodbridge, K., J. P. Gowers, & B.A. Joyce. (1982). Structural properties and composition control of GaAsyP1−y grown by MBE on VPE GaAs0.63P0.37 substrates. Journal of Crystal Growth. 60(1). 21–28. 16 indexed citations

17.

Roberts, J.S., G. B. Scott, & J. P. Gowers. (1981). Structural and photoluminescent properties of GaxIn1−xP(x≊0.5) grown on GaAs by molecular beam epitaxy. Journal of Applied Physics. 52(6). 4018–4026. 34 indexed citations

18.

Gowers, J. P., et al.. (1980). SEM and TEM observations of emitter‐collector pipes in bipolar transistors. Journal of Microscopy. 118(3). 329–336.

19.

Gowers, J. P., et al.. (1970). Mobility of electrons in SnS2 single crystals. Solid State Communications. 8(18). 1447–1449. 41 indexed citations

20.

Gowers, J. P., et al.. (1970). A GaAs-Cs-O transmission photocathode. Journal of Physics D Applied Physics. 3(3). 320–326. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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