J. P. Gowers

919 citations

29 papers · 723 indexed · h-index 16

Electrical and Electronic Engineering top 10%
Atomic and Molecular Physics, and Optics top 10%
Materials Chemistry
Biomedical Engineering
Computational Mechanics top 10%

Co-authors: S. D. Brotherton D. McCulloch J. B. Clegg J. R. Ayres B.A. Joyce J.H. Neave M. J. Trainor P.K. Larsen
Topics: Semiconductor Quantum Structures and Devices (13 papers)Semiconductor materials and interfaces (9 papers)Thin-Film Transistor Technologies (8 papers)
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Structural Biology
Journals: Applied Physics Letters Journal of Applied Physics Surface Science
Partner nations: United Kingdom Finland Netherlands

In The Last Decade

J. P. Gowers

28 papers receiving 673 citations

Peers

Countries citing papers authored by J. P. Gowers

Since Specialization

Citations

This map shows the geographic impact of J. P. Gowers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. P. Gowers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. P. Gowers more than expected).

Fields of papers citing papers by J. P. Gowers

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. P. Gowers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. P. Gowers. The network helps show where J. P. Gowers may publish in the future.

Co-authorship network of co-authors of J. P. Gowers

This figure shows the co-authorship network connecting the top 25 collaborators of J. P. Gowers. A scholar is included among the top collaborators of J. P. Gowers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. P. Gowers. J. P. Gowers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Influence of Excimer Laser Beam Shape on Poly-Si Crystallisation 2004 ·Japanese Journal of Applied Physics ·S. D. Brotherton,D. McCulloch,J. P. Gowers	7
2	Excimer Laser Crystallisation of Poly-Si TFTs for AMLCDs 2000 ·MRS Proceedings ·S. D. Brotherton,D. McCulloch,J. P. Gowers,J. R. Ayres,Craig A. Fisher,(unknown)	9
3	Excimer-laser-annealed poly-Si thin-film transistors 1993 ·IEEE Transactions on Electron Devices ·S. D. Brotherton,D. McCulloch,J. B. Clegg,J. P. Gowers	132
4	Defects in tin pre-amorphised p⁺n junctions in silicon 1989 ·Semiconductor Science and Technology ·J. R. Ayres,S. D. Brotherton,J. B. Clegg,A. Gill,J. P. Gowers	7
5	Structural and optical properties of III–V quantum wells grown on Si 1989 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·K. Woodbridge,J. P. Gowers,Paul F. Fewster,P. Dawson,K. J. Moore,Christine Cardinal Roberts	4
6	Measurement of 'material' parameters in multi-quantum-well structures 1987 ·Semiconductor Science and Technology ·John Orton,Paul F. Fewster,J. P. Gowers,P. Dawson,K. J. Moore,Peter J. Dobson,(unknown),C. T. Foxon,K. Woodbridge,G. Duggan,H. I. Ralph	29
7	Silicon migration during MBE growth of doped (A1, Ga)As films 1986 ·Applied Physics A ·L. González,J. B. Clegg,David Hilton,J. P. Gowers,C. T. Foxon,B.A. Joyce	24
8	Surface structure and the origin of antisite domains in GaAs:Ge epitaxial films 1985 ·Surface Science ·R.C. Pond,J. P. Gowers,B.A. Joyce	16
9	Surface structure and the origin of antisite domains in GaAs: Ge epitaxial films 1985 ·Surface Science Letters ·R.C. Pond,J. P. Gowers,B.A. Joyce	6
10	Transmission electron microscopy and high resolution electron microscopy studies of shallow (R p∼20 nm) As and B implanted and electron beam annealed silicon 1984 ·Applied Physics Letters ·(unknown),David J. Smith,J. P. Gowers,H. Ahmed	3
11	Structural and optical properties of GaAs–AlxGa1−xAs quantum wells 1984 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·K. Woodbridge,P. Dawson,J. P. Gowers,C. T. Foxon	6
12	A General Treatment of Antiphase Domain Formation and Identification at Polar-Nonpolar Semiconductor Interfaces. 1983 ·MRS Proceedings ·R.C. Pond,J. P. Gowers,D. B. Holt,B.A. Joyce,J.H. Neave,P.K. Larsen	7
13	TEM image contrast from clustering in Ga-In containing III?V alloys 1983 ·Applied Physics A ·J. P. Gowers	23
14	Imaging of domains and grain boundaries in a ferroelectric semiconducting ceramic 1982 ·Applied Physics Letters ·J. E. Ralph,J. P. Gowers,(unknown)	6
15	Nucleation effects during MBE growth of Sn-Doped GaAs 1982 ·Applied Physics A ·J. J. Harris,B.A. Joyce,J. P. Gowers,J.H. Neave	36
16	Structural properties and composition control of GaAsyP1−y grown by MBE on VPE GaAs0.63P0.37 substrates 1982 ·Journal of Crystal Growth ·K. Woodbridge,J. P. Gowers,B.A. Joyce	16
17	Structural and photoluminescent properties of GaxIn1−xP(x≊0.5) grown on GaAs by molecular beam epitaxy 1981 ·Journal of Applied Physics ·J.S. Roberts,G. B. Scott,J. P. Gowers	34
18	SEM and TEM observations of emitter‐collector pipes in bipolar transistors 1980 ·Journal of Microscopy ·J. P. Gowers,(unknown),P. Ashburn	0
19	Mobility of electrons in SnS2 single crystals 1970 ·Solid State Communications ·J. P. Gowers,(unknown)	41
20	A GaAs-Cs-O transmission photocathode 1970 ·Journal of Physics D Applied Physics ·(unknown),J. P. Gowers,John Henderson,(unknown),(unknown),(unknown)	5

About J. P. Gowers

J. P. Gowers is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Computational Mechanics, having authored 29 papers that have together received 723 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and interfaces (9 papers) and Thin-Film Transistor Technologies (8 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (332 citations), Electrical and Electronic Engineering (594 citations) and Structural Biology (12 citations). J. P. Gowers has collaborated with scholars based in United Kingdom, Finland and Netherlands. Frequent co-authors include S. D. Brotherton, D. McCulloch, J. B. Clegg, J. R. Ayres, B.A. Joyce, J.H. Neave, M. J. Trainor, P.K. Larsen, B.A. Joyce and J. F. van der Veen. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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