B. Sagnes

590 citations

22 papers · 466 indexed · h-index 12

Hardware and Architecture top 5%
- VLSI and Analog Circuit Testing 9
Electrical and Electronic Engineering top 10%
- Radiation Effects in Electronics 21
- Integrated Circuits and Semiconductor Failure Analysis 16
- Semiconductor materials and devices 10
- Advancements in Semiconductor Devices and Circuit Design 3
- Electrostatic Discharge in Electronics 2
- Silicon Carbide Semiconductor Technologies 1
Radiation top 10%
Safety, Risk, Reliability and Quality
Nuclear and High Energy Physics
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 1

Co-authors: J.M. Palau Frédéric Saigné G. Hubert J. Boch M.-C. Calvet Gilles Gasiot T. Carrière F. Wrobel
Cited by: Hardware and Architecture Electrical and Electronic Engineering Radiation
Journals: IEEE Transactions on Nuclear Science (15 papers)Materials Science and Engineering B (1 paper)ESA Special Publication (1 paper)
Partner nations: France United States Japan

In The Last Decade

B. Sagnes

22 papers receiving 439 citations

Peers

Countries citing papers authored by B. Sagnes

Since Specialization

Citations

This map shows the geographic impact of B. Sagnes's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Sagnes with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Sagnes more than expected).

Fields of papers citing papers by B. Sagnes

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Sagnes. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Sagnes. The network helps show where B. Sagnes may publish in the future.

Co-authorship network

The 25 scholars most cited alongside B. Sagnes, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Sagnes Line = papers co-authored together B. Sagnes links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Effects of Total Ionizing Dose on 1-V and Low Frequency Noise characteristics in advanced Si/SiGe:C Heterojunction Bipolar Transistors 谢锦华,Sánchez Cubas S,Anan Abu Rmilah,B. Sagnes,F. Pascal,Rieckher,M. Valenza,J. Boch,P. P. Bertling,S. Haendler,Rebecca Darlay,P. Chevalier,D. Gloria	2019	1
2	Prediction of Multiple Cell Upset Induced by Heavy Ions in a 90 nm Bulk SRAM IEEE Transactions on Nuclear Science ·Guillaume Toucas,宏之富澤,B. Sagnes,F. Wrobel,J. Boch,Gilles Gasiot,P. Roche	2009	35
3	Temperature Effect on Heavy-Ion-Induced Single-Event Transient Propagation in CMOS Bulk 0.18 $\mu$m Inverter Chain IEEE Transactions on Nuclear Science ·Roberta Schwartz-Cowley,J. Boch,B. Sagnes,J.-R. Vaillé,Nicolas Renaud,Erik D Vengroff,José Porfirio Alvarado Quijada,Chun-Huat Heng,Lahiru N. Jayasekera,Frédéric Saigné	2008	14
4	Temperature Effect on Heavy-Ion Induced Parasitic Current on SRAM by Device Simulation: Effect on SEU Sensitivity IEEE Transactions on Nuclear Science ·Roberta Schwartz-Cowley,J. Boch,B. Sagnes,Nicolas Renaud,Erik D Vengroff,Alexandr Agamirzow,Frédéric Saigné	2007	26
5	Innovative Simulations of Heavy Ion Cross Sections in 130 nm CMOS SRAM IEEE Transactions on Nuclear Science ·Guillaume Toucas,Frédéric Saigné,B. Sagnes,J. Boch,Gilles Gasiot,D. Giot,P. Roche	2007	28
6	Simulation tool for the prediction of heavy ion cross section of innovative 130 nm SRAMs Guillaume Toucas,Frédéric Saigné,B. Sagnes,J. Boch,Gilles Gasiot,D. Giot,Ph. Roche	2007	3
7	Analysis of Quasi-Monoenergetic Neutron and Proton SEU Cross Sections for Terrestrial Applications IEEE Transactions on Nuclear Science ·Damien Lambert,J. Baggio,G. Hubert,Philippe Paillet,Stéphane Girard,V. Ferlet-Cavrois,O. Flament,Frédéric Saigné,J. Boch,B. Sagnes,N. Buard,T. Carrière	2006	30
8	Neutron-induced SEU in SRAMs: Simulations with n-Si and n-O interactions IEEE Transactions on Nuclear Science ·Damien Lambert,J. Baggio,G. Hubert,V. Ferlet-Cavrois,O. Flament,Frédéric Saigné,F. Wrobel,H. Duarte,J. Boch,B. Sagnes,N. Buard,T. Carrière	2005	24
9	Alpha induced SEU and MBU rates evaluation for advanced SRAMs by Monte-Carlo simulations Audrey Lauer,宏之富澤,B. Sagnes,Gilles Gasiot,Ph. Roche,T. Carrière,Irenis Abad Ramírez	2005	1
10	Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs IEEE Transactions on Nuclear Science ·Audrey Lauer,Frédéric Saigné,B. Sagnes,Gilles Gasiot,Ph. Roche,T. Carrière,Irenis Abad Ramírez,F. Wrobel,Roberto Sánchez‐Sánchez	2005	32
11	Criterion for SEU occurrence in SRAM deduced from circuit and device Simulations in case of neutron-induced SER IEEE Transactions on Nuclear Science ·Audrey Lauer,Corrado Magnani,J.M. Palau,Zhou Renyun,F. Wrobel,宏之富澤,B. Sagnes,J. Boch,J.-R. Vaillé,Gilles Gasiot,P. Roche,Irenis Abad Ramírez,T. Carrière	2005	60
12	Neutron-induced SEU in bulk SRAMs in terrestrial environment: Simulations and experiments IEEE Transactions on Nuclear Science ·Damien Lambert,J. Baggio,V. Ferlet-Cavrois,O. Flament,Frédéric Saigné,B. Sagnes,N. Buard,T. Carrière	2004	36
13	Neutron-induced SEU in bulk and SOI SRAMS in terrestrial environment HAL (Le Centre pour la Communication Scientifique Directe) ·J. Baggio,Damien Lambert,V. Ferlet-Cavrois,Кациоппе Рон,Kazuyuki Hirose,Hirobumi Saito,J.M. Palau,Frédéric Saigné,B. Sagnes,N. Buard,T. Carrière	2004	12
14	Methodology to compute neutron-Induced Alphas contribution on the SEU Cross section in sensitive RAMs IEEE Transactions on Nuclear Science ·F. Wrobel,J.M. Palau,P. Iacconi,Irenis Abad Ramírez,B. Sagnes,Frédéric Saigné	2004	9
15	Study of an SOI SRAM sensitivity to SEU by 3-D device Simulation IEEE Transactions on Nuclear Science ·Zhou Renyun,B. Sagnes,Frédéric Saigné,J.M. Palau,M.-C. Calvet,P.E. Dodd,F.W. Sexton	2004	10
16	3-D Device Simulation ESA Special Publication ·Zhou Renyun,B. Sagnes,Laíssa Cristine de Oliveira Ferreira,Людмила Митюрникова,M.-C. Calvet,P.E. Dodd,F.W. Sexton	2003	1
17	Comparison of NMOS and PMOS transistor sensitivity to SEU in SRAMs by device simulation IEEE Transactions on Nuclear Science ·Zhou Renyun,B. Sagnes,Frédéric Saigné,J.M. Palau,M.-C. Calvet,P.E. Dodd,F.W. Sexton	2003	9
18	Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions IEEE Transactions on Nuclear Science ·J.M. Palau,G. Hubert,Sicheng Bing,B. Sagnes,M.-C. Calvet,M. Wanneveich	2001	96
19	Study of basic mechanisms induced by an ionizing particle on simple structures IEEE Transactions on Nuclear Science ·G. Hubert,J.M. Palau,Ph. Roche,B. Sagnes,J. Gasiot,M.-C. Calvet	2000	24
20	Carbonization of Si surfaces by solid source molecular beam epitaxy Materials Science and Engineering B ·Konstantinos Zekentes,Фомин Андрей Вячеславович,K. Tsagaraki,B. Sagnes,Siti Evi Nurshofi,(unknown),J. Camassel	1995	7

About B. Sagnes

B. Sagnes is a scholar working on Hardware and Architecture, Electrical and Electronic Engineering, Nuclear and High Energy Physics, Aerospace Engineering and Atomic and Molecular Physics, and Optics, having authored 22 papers that have together received 466 indexed citations. Recurring topics across this work include Radiation Effects in Electronics (21 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers), Semiconductor materials and devices (10 papers), VLSI and Analog Circuit Testing (9 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers), Electrostatic Discharge in Electronics (2 papers), Silicon Carbide Semiconductor Technologies (1 paper) and Semiconductor materials and interfaces (1 paper). The work is most often cited by research in Hardware and Architecture (182 citations), Electrical and Electronic Engineering (450 citations), Radiation (53 citations), Safety, Risk, Reliability and Quality (21 citations) and Nuclear and High Energy Physics (29 citations). B. Sagnes has collaborated with scholars based in France, United States and Japan. Frequent co-authors include J.M. Palau, Frédéric Saigné, G. Hubert, J. Boch, M.-C. Calvet, Gilles Gasiot, T. Carrière, F. Wrobel, P. Roche and Damien Lambert. Their work appears in journals such as IEEE Transactions on Nuclear Science, Materials Science and Engineering B, ESA Special Publication, HAL (Le Centre pour la Communication Scientifique Directe) and SPIRE - Sciences Po Institutional REpository.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact