N. Nagashima

478 total citations
21 papers, 191 citations indexed

About

N. Nagashima is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, N. Nagashima has authored 21 papers receiving a total of 191 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 2 papers in Condensed Matter Physics. Recurrent topics in N. Nagashima's work include Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). N. Nagashima is often cited by papers focused on Semiconductor materials and devices (18 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Integrated Circuits and Semiconductor Failure Analysis (5 papers). N. Nagashima collaborates with scholars based in Japan, Taiwan and Australia. N. Nagashima's co-authors include Shinji Kawaji, J. Kinoshita, J. Wakabayashi, Kazuo Yoshihiro, Naoya Kikuchi, Chikako Yamanouchi, Hayato Koike, T. Noguchi, F. Matsuoka and B.W. Ricketts and has published in prestigious journals such as Surface Science, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

N. Nagashima

20 papers receiving 179 citations

Peers

N. Nagashima
D. Céli France
J.T. Watt United States
Andrew R. Brown United Kingdom
Chih-Sheng Chang Taiwan
I. Post United Kingdom
B.M. Haugerud United States
A. Cros France
Pong-Fei Lu United States
S. Springer United States
E.G. Ioannidis France
D. Céli France
N. Nagashima
Citations per year, relative to N. Nagashima N. Nagashima (= 1×) peers D. Céli

Countries citing papers authored by N. Nagashima

Since Specialization
Citations

This map shows the geographic impact of N. Nagashima's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Nagashima with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Nagashima more than expected).

Fields of papers citing papers by N. Nagashima

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Nagashima. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Nagashima. The network helps show where N. Nagashima may publish in the future.

Co-authorship network of co-authors of N. Nagashima

This figure shows the co-authorship network connecting the top 25 collaborators of N. Nagashima. A scholar is included among the top collaborators of N. Nagashima based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Nagashima. N. Nagashima is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Tsujikawa, Shigeo, Masayoshi KANNO, & N. Nagashima. (2011). Reliable Assessment of Progressive Breakdown in Ultrathin MOS Gate Oxides Toward Accurate TDDB Evaluation. IEEE Transactions on Electron Devices. 58(5). 1468–1475. 7 indexed citations
3.
Tsukamoto, Masanori, et al.. (2009). Stress-enhancement technique in narrowing NMOSFETs with damascene-gate process and tensile liner. 45. 20–21. 1 indexed citations
4.
Wakabayashi, Hitoshi, et al.. (2009). Effects of Channel Width on Stress Enhancement for Damascene-Gate nFETs With Top-Cut Tensile-Stress Liner. IEEE Electron Device Letters. 31(1). 65–67. 3 indexed citations
5.
Kosemura, Daisuke, Masahiro Takei, Takao Ando, et al.. (2008). Channel-stress study on gate-size effects for damascene-Gate pMOSFETs with top-cut compressive stress liner and eSiGe. 126–127. 7 indexed citations
6.
Koike, Hayato, et al.. (2007). Advanced Analysis and Modeling of MOSFET Characteristic Fluctuation Caused by Layout Variation. 18. 204–205. 39 indexed citations
7.
Kosemura, Daisuke, Masahiro Takei, Kengo Nagata, et al.. (2006). Comparative study between Si (110) and (100) substrates on mobility and velocity enhancements for short-channel highly-strained PFETs. Symposium on VLSI Technology. 14–15. 3 indexed citations
8.
Ando, Takao, Yoshiya Hagimoto, Tadafumi Kato, et al.. (2006). High Performance Dual Metal Gate CMOS with High Mobility and Low Threshold Voltage Applicable to Bulk CMOS Technology. 152–153. 8 indexed citations
9.
Ando, Takao, Tadafumi Kato, S Kanda, et al.. (2006). High Performance pMOSFET with ALD-TiN/HfO2 Gate Stack on (110) Substrate by Low Temperature Process. 43. 121–124. 4 indexed citations
10.
Ando, Takashi, Tatsuya Kato, Yoshiya Hagimoto, et al.. (2006). Sub-1nm EOT HfSix/HfO2 Gate Stack Using Novel Si Extrusion Process for High Performance Application. 166–167. 3 indexed citations
11.
Ando, Takao, Tadafumi Kato, Yoshiya Hagimoto, et al.. (2006). High performance nMOSFET with HfSi/subx//HfO/sub 2/ gate stack by low temperature process. 890–893. 1 indexed citations
12.
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14.
Yoshimura, Hideaki�, Ko‐ichiro Ohno, M. Saito, et al.. (2005). Mobility improvement for 45nm node by combination of optimized stress control and channel orientation design. 217–220. 27 indexed citations
15.
Kanda, M., E. Morifuji, Kazuyuki Takahashi, et al.. (2004). Highly stable 65 nm node (CMOS5) 0.56 μm/sup 2/ SRAM cell design for very low operation voltage. 13–14. 5 indexed citations
16.
Takao, Y., Hiroshi Kudo, S. Yamaguchi, et al.. (2002). A 0.11 μm CMOS technology with copper and very-low-k interconnects for high-performance system-on-a-chip cores. 559–562. 10 indexed citations
17.
Nagashima, N., J. Wakabayashi, Shinji Kawaji, et al.. (1994). Comparison of quantized Hall resistances R/sub H/(2) and R/sub H/(4) of a GaAs/AlGaAs heterostructure device. IEEE Transactions on Instrumentation and Measurement. 43(4). 521–525. 5 indexed citations
18.
Kinoshita, J., Chikako Yamanouchi, Kazuo Yoshihiro, et al.. (1989). Self-balancing resistance ratio bridge using a cryogenic current comparator. IEEE Transactions on Instrumentation and Measurement. 38(2). 290–292. 27 indexed citations
19.
Kawaji, Shinji, N. Nagashima, Naoya Kikuchi, et al.. (1989). Quantized Hall resistance measurements. IEEE Transactions on Instrumentation and Measurement. 38(2). 270–275. 22 indexed citations
20.
Kawaji, Shinji & N. Nagashima. (1988). Effects of higher subband tails on inelastic scattering time in Si(001) inversion layers. Surface Science. 196(1-3). 316–322. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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