V. Ryzhii

8.6k total citations
306 papers, 6.1k citations indexed

About

V. Ryzhii is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, V. Ryzhii has authored 306 papers receiving a total of 6.1k indexed citations (citations by other indexed papers that have themselves been cited), including 228 papers in Atomic and Molecular Physics, and Optics, 203 papers in Electrical and Electronic Engineering and 99 papers in Materials Chemistry. Recurrent topics in V. Ryzhii's work include Semiconductor Quantum Structures and Devices (129 papers), Terahertz technology and applications (98 papers) and Graphene research and applications (87 papers). V. Ryzhii is often cited by papers focused on Semiconductor Quantum Structures and Devices (129 papers), Terahertz technology and applications (98 papers) and Graphene research and applications (87 papers). V. Ryzhii collaborates with scholars based in Japan, United States and Russia. V. Ryzhii's co-authors include Taiichi Otsuji, M. Ryzhii, Akira Satou, M. S. Shur, Vladimir Mitin, I. Khmyrova, F. T. Vasko, V. V. Popov, M. Ershov and А. А. Дубинов and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

V. Ryzhii

289 papers receiving 5.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Ryzhii Japan 43 3.8k 3.8k 2.5k 2.1k 780 306 6.1k
Stephan Winnerl Germany 33 2.3k 0.6× 2.4k 0.6× 979 0.4× 953 0.5× 208 0.3× 187 3.8k
Vladimir Mitin United States 29 2.4k 0.6× 2.1k 0.6× 982 0.4× 1.4k 0.7× 385 0.5× 285 3.7k
V. V. Popov Russia 34 1.8k 0.5× 2.1k 0.6× 1.9k 0.8× 385 0.2× 377 0.5× 184 3.3k
Hong Lü United States 34 2.3k 0.6× 2.0k 0.5× 389 0.2× 1.2k 0.6× 373 0.5× 178 4.0k
J. L. Reno United States 28 2.7k 0.7× 1.9k 0.5× 1.3k 0.5× 482 0.2× 139 0.2× 138 3.9k
D. Coquillat France 20 1.3k 0.4× 1.8k 0.5× 725 0.3× 724 0.3× 134 0.2× 91 2.5k
John F. Klem United States 39 4.2k 1.1× 3.9k 1.0× 845 0.3× 818 0.4× 226 0.3× 264 5.3k
F. Teppe France 35 2.6k 0.7× 2.9k 0.8× 635 0.3× 815 0.4× 92 0.1× 175 3.8k
G. Biasiol Italy 29 3.2k 0.8× 1.4k 0.4× 948 0.4× 561 0.3× 341 0.4× 198 3.7k
Shun Lien Chuang United States 38 4.1k 1.1× 3.8k 1.0× 961 0.4× 597 0.3× 43 0.1× 101 5.2k

Countries citing papers authored by V. Ryzhii

Since Specialization
Citations

This map shows the geographic impact of V. Ryzhii's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Ryzhii with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Ryzhii more than expected).

Fields of papers citing papers by V. Ryzhii

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Ryzhii. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Ryzhii. The network helps show where V. Ryzhii may publish in the future.

Co-authorship network of co-authors of V. Ryzhii

This figure shows the co-authorship network connecting the top 25 collaborators of V. Ryzhii. A scholar is included among the top collaborators of V. Ryzhii based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Ryzhii. V. Ryzhii is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ryzhii, V., Chao Tang, Taiichi Otsuji, et al.. (2024). Phase- and Angle-Sensitive Terahertz Hot-Electron Bolometric Plasmonic Detectors Based on Fets with Graphene Channel and Composite H-BN/Black-P/H-BN Gate Layer. International Journal of High Speed Electronics and Systems. 33(4). 1 indexed citations
2.
Ryzhii, V., Chao Tang, Taiichi Otsuji, et al.. (2023). Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate. Journal of Applied Physics. 133(17). 3 indexed citations
3.
Ryzhii, M., V. Ryzhii, M. S. Shur, et al.. (2023). Terahertz bolometric detectors based on graphene field-effect transistors with the composite h-BN/black-P/h-BN gate layers using plasmonic resonances. Journal of Applied Physics. 134(8). 3 indexed citations
4.
Ryzhii, V., Chao Tang, Taiichi Otsuji, et al.. (2023). Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As$$_x$$P$$_{1-x}$$ gate layer. Scientific Reports. 13(1). 9665–9665. 8 indexed citations
5.
Ryzhii, V., M. Ryzhii, Akira Satou, et al.. (2021). Effect of Coulomb Carrier Drag and Terahertz Plasma Instability in p+-p-i-n-n+ Graphene Tunneling Transistor Structures. Physical Review Applied. 16(6). 5 indexed citations
6.
Ryzhii, V., M. Ryzhii, Taiichi Otsuji, et al.. (2020). Multiple graphene-layer-based heterostructures with van der Waals barrier layers for terahertz superluminescent and laser diodes with lateral/vertical current injection. Semiconductor Science and Technology. 35(8). 85023–85023. 2 indexed citations
7.
Ryzhii, M., Taiichi Otsuji, V. Ryzhii, et al.. (2019). Concepts of infrared and terahertz photodetectors based on vertical graphene van der Waals and HgTe-CdHgTe heterostructures. Opto-Electronics Review. 27(2). 219–223. 2 indexed citations
8.
Ryzhii, M., V. Ryzhii, Vladimir Mitin, Michael S. Shur, & Taiichi Otsuji. (2019). Vertical Hot-electron Terahertz Detectors Based on Black-As1?xPx/graphene/black-As1?yPy Heterostructures. Sensors and Materials. 31(7). 2271–2271. 1 indexed citations
9.
Пономарев, Д. С., D. V. Lavrukhin, A. E. Yachmenev, et al.. (2019). Sub-terahertz FET detector with self-assembled Sn-nanothreads. Journal of Physics D Applied Physics. 53(7). 75102–75102. 7 indexed citations
10.
Rybin, Maxim, et al.. (2018). The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts. Materials Today Proceedings. 5(13). 27301–27306. 2 indexed citations
11.
Koseki, Y., V. Ryzhii, Taiichi Otsuji, V. V. Popov, & Akira Satou. (2016). Giant plasmon instability in a dual-grating-gate graphene field-effect transistor. Physical review. B.. 93(24). 32 indexed citations
12.
Vyurkov, V., et al.. (2016). Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities. Scientific Reports. 6(1). 24654–24654. 24 indexed citations
13.
Otsuji, Taiichi, et al.. (2012). Terahertz-Wave Generation Using Graphene: Toward New Types of Terahertz Lasers. IEEE Journal of Selected Topics in Quantum Electronics. 19(1). 8400209–8400209. 48 indexed citations
14.
Otsuji, Taiichi, Stephane Albon Boubanga Tombet, Silvia H. Chan, Akira Satou, & V. Ryzhii. (2011). Terahertz light amplification by stimulated emission of radiation from optically pumped graphene. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8023. 802304–802304. 5 indexed citations
15.
Ryzhii, V., et al.. (2010). Terahertz and infrared detectors based on graphene structures. Infrared Physics & Technology. 54(3). 302–305. 30 indexed citations
16.
Дубинов, А. А., V. Ya. Aleshkin, M. Ryzhii, Taiichi Otsuji, & V. Ryzhii. (2009). Terahertz Laser with Optically Pumped Graphene Layers and Fabri–Perot Resonator. Applied Physics Express. 2(9). 92301–92301. 54 indexed citations
17.
Ryzhii, V.. (2008). Heterostructure terahertz devices. Journal of Physics Condensed Matter. 20(38). 380301–380301. 13 indexed citations
18.
Ryzhii, V.. (2008). Heterostructure terahertz devices. Journal of Physics Condensed Matter. 20(38). 380301–380301.
19.
Ryzhii, V. & M. Ershov. (1995). Electrical and optical properties of a quantum-well infrared phototransistor. Semiconductor Science and Technology. 10(5). 687–690. 9 indexed citations
20.
Ryzhii, V., et al.. (1991). Simulation of HBTs and HIGFETs Based on AIGaAs GaAs Heterostructures. 2. 215–218.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Stephan Winnerl Breakdown of academic impact, for papers by Vladimir Mitin Breakdown of academic impact, for papers by V. V. Popov Breakdown of academic impact, for papers by Hong Lü Breakdown of academic impact, for papers by J. L. Reno Breakdown of academic impact, for papers by D. Coquillat Breakdown of academic impact, for papers by John F. Klem Breakdown of academic impact, for papers by F. Teppe Breakdown of academic impact, for papers by G. Biasiol Breakdown of academic impact, for papers by Shun Lien Chuang
Rankless by CCL
2026