V. Ryzhii
-
- Semiconductor Quantum Structures and Devices 129
- Quantum and electron transport phenomena 84
- Topological Materials and Phenomena 39
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- Terahertz technology and applications 98
- Photonic and Optical Devices 54
- Biomedical Engineering top 0.5%
- Plasmonic and Surface Plasmon Research 65
- Materials Chemistry top 2%
- Graphene research and applications 87
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- Thermal Radiation and Cooling Technologies 49
- Co-authors
- Taiichi OtsujiM. RyzhiiAkira SatouM. S. ShurVladimir MitinI. KhmyrovaF. T. VaskoV. V. Popov
- Cited by
- Atomic and Molecular Physics, and OpticsElectrical and Electronic EngineeringBiomedical Engineering
- Journals
- Journal of Applied Physics (52 papers)Japanese Journal of Applied Physics (21 papers)Semiconductor Science and Technology (21 papers)
- Partner nations
- JapanUnited StatesRussia
In The Last Decade
V. Ryzhii
289 papers receiving 5.9k citations
Peers
Comparison fields: 5 of 63
- Atomic and Molecular Physics, and Optics 3.8k
- Electrical and Electronic Engineering 3.8k
- Biomedical Engineering 2.5k
- Materials Chemistry 2.1k
- Electronic, Optical and Magnetic Materials 732
Countries citing papers authored by V. Ryzhii
This map shows the geographic impact of V. Ryzhii's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Ryzhii with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Ryzhii more than expected).
Fields of papers citing papers by V. Ryzhii
This network shows the impact of papers produced by V. Ryzhii. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Ryzhii. The network helps show where V. Ryzhii may publish in the future.
Co-authorship network
The 25 scholars most cited alongside V. Ryzhii, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2024 | 1 | |
| 2 | 2023 | 8 | |
| 3 | 2023 | 3 | |
| 4 | 2023 | 3 | |
| 5 | 2021 | 5 | |
| 6 | 2020 | 2 | |
| 7 | 2019 | 2 | |
| 8 | 2019 | 1 | |
| 9 | 2019 | 7 | |
| 10 | 2018 | 14 | |
| 11 | 2016 | 24 | |
| 12 | 2014 | 14 | |
| 13 | 2014 | 88 | |
| 14 | 2010 | 9 | |
| 15 | 2008 | 13 | |
| 16 | 2008 | 0 | |
| 17 | 2005 | 8 | |
| 18 | Physics of Quantum Well and Quantum Dot Infrared Photodetectors | 2000 | 1 |
| 19 | 1996 | 10 | |
| 20 | Simulation of HBTs and HIGFETs Based on AIGaAs GaAs Heterostructures | 1991 | 0 |
About V. Ryzhii
V. Ryzhii is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Civil and Structural Engineering, Materials Chemistry and Spectroscopy, having authored 306 papers that have together received 6.1k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (129 papers), Terahertz technology and applications (98 papers), Graphene research and applications (87 papers), Quantum and electron transport phenomena (84 papers), Plasmonic and Surface Plasmon Research (65 papers), Photonic and Optical Devices (54 papers), Thermal Radiation and Cooling Technologies (49 papers) and Topological Materials and Phenomena (39 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (3.8k citations), Electrical and Electronic Engineering (3.8k citations), Biomedical Engineering (2.5k citations), Materials Chemistry (2.1k citations) and Electronic, Optical and Magnetic Materials (732 citations). V. Ryzhii has collaborated with scholars based in Japan, United States and Russia. Frequent co-authors include Taiichi Otsuji, M. Ryzhii, Akira Satou, M. S. Shur, Vladimir Mitin, I. Khmyrova, F. T. Vasko, V. V. Popov, M. Ershov and А. А. Дубинов. Their work appears in journals such as Journal of Applied Physics, Japanese Journal of Applied Physics, Semiconductor Science and Technology, Applied Physics Letters and Physical Review B.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.