M. Geva

1.7k total citations
90 papers, 1.3k citations indexed

About

M. Geva is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, M. Geva has authored 90 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 82 papers in Electrical and Electronic Engineering, 67 papers in Atomic and Molecular Physics, and Optics and 13 papers in Materials Chemistry. Recurrent topics in M. Geva's work include Semiconductor Quantum Structures and Devices (52 papers), Semiconductor materials and devices (42 papers) and Semiconductor Lasers and Optical Devices (23 papers). M. Geva is often cited by papers focused on Semiconductor Quantum Structures and Devices (52 papers), Semiconductor materials and devices (42 papers) and Semiconductor Lasers and Optical Devices (23 papers). M. Geva collaborates with scholars based in United States, Germany and Israel. M. Geva's co-authors include J. L. Hirshfield, M. Krishnan, M. C. Nuss, Daniel M. Mittleman, J. E. Cunningham, S. J. Pearton, H. P. Xin, A. Katz, S. N. G. Chu and C. W. Tu and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

M. Geva

86 papers receiving 1.2k citations

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
M. Geva 1.0k 883 239 186 171 90 1.3k
H. Kurz 688 0.7× 590 0.7× 406 1.7× 211 1.1× 96 0.6× 60 1.2k
D. W. Kisker 927 0.9× 920 1.0× 360 1.5× 95 0.5× 260 1.5× 58 1.3k
M. J. Ashwin 971 0.9× 1.0k 1.1× 482 2.0× 166 0.9× 156 0.9× 84 1.5k
J. Lopata 1.9k 1.9× 1.3k 1.5× 454 1.9× 219 1.2× 151 0.9× 112 2.2k
K.E. Singer 934 0.9× 1.1k 1.2× 318 1.3× 147 0.8× 183 1.1× 74 1.3k
W. Schmid 1.3k 1.3× 882 1.0× 493 2.1× 153 0.8× 102 0.6× 66 1.6k
D. Débarre 688 0.7× 622 0.7× 496 2.1× 253 1.4× 152 0.9× 79 1.3k
S. Malzer 1.0k 1.0× 772 0.9× 204 0.9× 247 1.3× 88 0.5× 109 1.5k
J. D. Benson 1.4k 1.4× 614 0.7× 407 1.7× 188 1.0× 106 0.6× 119 1.6k
J. I. Dijkhuis 748 0.7× 841 1.0× 487 2.0× 322 1.7× 84 0.5× 112 1.4k

Countries citing papers authored by M. Geva

Since Specialization
Citations

This map shows the geographic impact of M. Geva's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Geva with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Geva more than expected).

Fields of papers citing papers by M. Geva

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Geva. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Geva. The network helps show where M. Geva may publish in the future.

Co-authorship network of co-authors of M. Geva

This figure shows the co-authorship network connecting the top 25 collaborators of M. Geva. A scholar is included among the top collaborators of M. Geva based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Geva. M. Geva is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Ketelsen, L.J.P., S. K. Sputz, E. D. Isaacs, et al.. (1998). Wavelength stability, performance, and future trends for electroabsorption-modulated sources. 219–219. 1 indexed citations
3.
Schubert, E. Fred, C. J. Pinzone, & M. Geva. (1995). Phenomenology of Zn diffusion and incorporation in InP grown by organometallic vapor-phase epitaxy (OMVPE). Applied Physics Letters. 67(5). 700–702. 10 indexed citations
4.
Chu, S. N. G., R. A. Logan, M. Geva, & Nguyễn Thị Thanh Hà. (1995). Concentration dependent Zn diffusion in InP during metalorganic vapor phase epitaxy. Journal of Applied Physics. 78(5). 3001–3007. 26 indexed citations
5.
Chu, S. N. G., et al.. (1994). Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers. IEEE Journal of Quantum Electronics. 30(2). 424–440. 26 indexed citations
6.
Ritter, D., R. A. Hamm, M. B. Panish, & M. Geva. (1993). Beryllium δ doping studies in InP and Ga0.47In0.53As during metalorganic molecular beam epitaxy. Applied Physics Letters. 63(11). 1543–1545. 4 indexed citations
7.
Hobson, W. S. & M. Geva. (1992). Alternative Group V Precursors for the Growth of Al-Based III-V Epitaxial Layers by OMVPE. MRS Proceedings. 282. 2 indexed citations
8.
Reynolds, C. L. & M. Geva. (1992). Modification of interfacial carrier depletion in GaAs grown by molecular beam epitaxy. Journal of Applied Physics. 72(1). 303–305. 5 indexed citations
9.
Katz, A., S. J. Pearton, & M. Geva. (1991). Self-aligned technology for tungsten-contacted InP-based etched mesa laser devices. Applied Physics Letters. 59(3). 286–288. 13 indexed citations
10.
Asom, M. T., G. Livescu, M. Geva, et al.. (1991). Comparison of delta doped GaAs grown by MBE and GSMBE using different arsenic species. Journal of Crystal Growth. 111(1-4). 246–251. 2 indexed citations
11.
Katz, A., S. Nakahara, S. J. Pearton, et al.. (1991). Rapid thermal processing of WSix contacts to InP in low-pressure N2:H2 and tertiarybutylphosphine ambients. Journal of Applied Physics. 69(11). 7664–7673. 5 indexed citations
12.
Green, M. L., D. Brasen, M. Geva, et al.. (1990). Oxygen and carbon incorporation in low temperature epitaxial Si films grown by rapid thermal chemical vapor deposition (RTCVD). Journal of Electronic Materials. 19(10). 1015–1019. 4 indexed citations
13.
Katz, A., S. J. Pearton, & M. Geva. (1990). Tungsten metallization for stable and self-aligned InP-based laser devices. Journal of Applied Physics. 68(7). 3110–3113. 11 indexed citations
14.
Swaminathan, V., M. T. Asom, G. Livescu, et al.. (1990). Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy. Applied Physics Letters. 57(27). 2928–2930. 4 indexed citations
15.
Brasen, D., H. Temkin, R.D. Yadvish, et al.. (1990). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition. Thin Solid Films. 184(1-2). 107–115. 14 indexed citations
16.
Geva, M. & T. E. Seidel. (1986). Zn gettering in InGaAs/InP interfaces. Journal of Applied Physics. 59(7). 2408–2415. 18 indexed citations
17.
Donnelly, V. M., D. Brasen, A. Appelbaum, & M. Geva. (1985). Excimer laser-induced deposition of InP: Crystallographic and mechanistic studies. Journal of Applied Physics. 58(5). 2022–2035. 47 indexed citations
18.
Donnelly, V. M., M. Geva, J. Long, & R. F. Karlicek. (1984). Excimer laser induced deposition of InP and indium-oxide films. Applied Physics Letters. 44(10). 951–953. 47 indexed citations
19.
Geva, M., M. Krishnan, & J. L. Hirshfield. (1984). Element and isotope separation in a vacuum-arc centrifuge. Journal of Applied Physics. 56(5). 1398–1413. 56 indexed citations
20.
Krishnan, M., M. Geva, & J. L. Hirshfield. (1981). Plasma Centrifuge. Physical Review Letters. 46(1). 36–38. 86 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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